RF microelectronics for W-CDMA mobile communication systems

Third generation (3G) mobile communication systems are now just starting to be introduced. With a maximum data rate of 2 Mbit/s they will make wireless access to broadband data services like the Internet or video applications feasible. Most of the different physical layer technologies summarised under the acronym 3G are based on wideband-CDMA (W-CDMA), in contrast to existing second generation systems, which mostly use TDMA and FDMA. This has severe consequences for the design of the transceiver front-ends. During standardisation these were assumed to have an adequate RF performance yet they still present a performance bottleneck for the system. Starting with a short introduction to UMTS (Universal Mobile Telecommunications System)-the 3G standard to be deployed in Europe and already operating in Japan-this paper describes by way of example some of the test cases specified for UMTS and their impact on the analogue front-end. It is shown that accurate simulation of all the analogue and digital signal processing is necessary in order to predict the RF performance needed of today's commercial RFICs. The paper then presents and reviews some actual design examples. Finally, possible technologies and techniques for application in future mobile terminals are discussed     

On the comparison between OFDM and single carrier modulation with aDFE using a frequency-domain feedforward filter

Most comparisons between single carrier and multicarrier modulations assume frequency-domain linear equalization of the channel. We propose a new frequency-domain decision feedback equalizer (FD-DFE) for single carrier modulation, which makes use of a data block transmission format similar to that of the orthogonal frequency-division multiplexing with cyclic prefix (OFDM). The scheme is a nonadaptive DFE where the feedforward part is implemented in the frequency domain, while feedback signal is generated by time-domain filtering. Through simulations in a HIPERLAN-2 scenario, we show that FD-DFE yields a capacity very close to that of OFDM. This result is also confirmed by analytical derivations for a particular case. Furthermore, when no channel loading is considered, FD-DFE performs closely to OFDM for the same averaged frame error rate in a coded transmission. Design methods of the FD-DFE are investigated and a reduced complexity technique is developed, with the result that FD-DFE and OFDM have a similar computational complexity in signal processing     

The magnetic structure of TbNiSiD1.78

TbNiSiD_1.78 has been studied by powder neutron diffraction below 100 K. The compound takes the hexagonal room temperature structure at 100 and 50 K (P6₃/mmc). At 2 K, below the antiferromagnetic ordering temperature of 10 K, there is a small orthorhombic distortion of the lattice. The refined unit-cell dimensions at 2 K (space group Pnma) are a=7.9505(2), b=4.02502(14), c=6.9823(2) Å. The magnetic moments of Tb are 8.71(6) μ_B, and are ordered antiferromagnetically along a.     

InP D-HBT ICs for 40-Gb/s and higher bitrate lightwave transceivers

The combination of device speed (f/sub T/, f/sub max/ > 150 GHz) and breakdown voltage (V/sub bceo/ > 8 V) makes the double heterojunction bipolar InP-based transistor (D-HBT) an attractive technology to implement the most demanding analog functions of 40-Gb/s transceivers. This is illustrated by the performance of a number of analog circuits realized in an InP D-HBT technology with an 1.2- or 1.6-/spl mu/m-wide emitter finger: a low phase noise push-push voltage-controlled oscillator with -7-dBm output power at 146 GHz, a 40-GHz bandwidth and low-jitter 40-Gb/s limiting amplifier, a lumped 40-Gb/s limiting driver amplifier with 4.5-V/sub pp/ differential output swing, a distributed 40-Gb/s driver amplifier with 6-V/sub pp/ differential output swing, and a number of distributed preamplifiers with up to 1.3-THz gain-bandwidth product.     

A 1-V 10.7-MHz switched-opamp bandpass /spl Sigma//spl Delta/ modulator using double-sampling finite-gain-compensation technique

A 1 V switched-capacitor (SC) bandpass sigma-delta (/spl Sigma//spl Delta/) modulator is realized using a high-speed switched-opamp (SO) technique with a sampling frequency of up to 50 MHz, which is improved ten times more than prior 1 V SO designs and comparable to the performance of the state-of-the-art SC circuits that operate at much higher supply voltages. On the system level, a fast-settling double-sampling SC biquadratic filter architecture is proposed to achieve high-speed operation. A low-voltage double-sampling finite-gain-compensation technique is employed to realize a high-resolution /spl Sigma//spl Delta/ modulator using only low-DC-gain opamps to maximize the speed and to reduce power dissipation. On the circuit level, a fast-switching methodology is proposed for the design of the switchable opamps to achieve a switching frequency up to 50 MHz. Implemented in a 0.35-/spl mu/m CMOS process (V/sub TP/=0.82 V and V/sub TN/=0.65 V) and at 1 V supply, the modulator achieves a measured peak signal-to-noise-and-distortion ratio (SNDR) of 42.3 dB at 10.7 MHz with a signal bandwidth of 200 kHz, while dissipating 12 mW and occupying a chip area of 1.3 mm/sup 2/.     

Fuzzy rule-based classification of remotely sensed imagery

The purpose of this paper is to investigate the applicability of fuzzy rule-based modeling to classify a LANDSAT TM scene from 1984 of an area located in the south of Germany. Both a land cover map with four different categories and an image depicting the degree of ambiguity of the classification for each pixel is the expected output. The fuzzy classification algorithm will use a rule system derived from a training set using simulated annealing as an optimization algorithm. The results are then validated and compared with a common classification method in order to judge the effectiveness of the proposed technique. It will also be shown that the proposed method with only nine rules for four different land cover classes performs slightly better than the maximum likelihood classifier (MLC). For error assessment, the traditional error matrix and fuzzy operators have been used     

Magnetic effects of direct ion implantation of Mn and Fe into p-GaN

In p-GaN implanted with Mn (3×10¹⁶ cm⁻² at 250 keV), the material after annealing shows ferromagnetic properties below 250 K. Cross-sectional transmission electron microscopy (TEM) revealed the presence of platelet structures with hexagonal symmetry. These regions are most likely Ga_xMn_1−xN, which produce the ferromagnetic contribution to the magnetization. In p-GaN implanted with Fe, the material after annealing showed ferromagnetic properties at temperatures that were dependent on the Fe dose, but were below 200 K in all cases. In these samples, TEM and diffraction analysis did not reveal any secondary phase formation. The results for the Fe implantation are similar to those reported for Fe doping during epitaxial growth of GaN.     

A simple model for SAR azimuth speckle, focusing, and interferometric decorrelation

The phenomenon of speckle in synthetic aperture radar (SAR) images is well known as a characteristic grainy appearance of radar images. Speckle is frequently a significant obstacle to visual interpretations of radar data or target identification. In addition, it is usually the dominant noise source in SAR interferometry, since it is responsible for image decorrelation that degrades interferometric fringes, places severe constraints on orbits, and limits the accuracy of height measurements. This communication deals with the geometric sources of speckle. This conventional picture is extended to the case of vertically separated scatterers, and the formulation that results is applied to the structurally similar topics of azimuth focusing, interferometric decorrelation from defocusing, and atmospheric phase delays.     

The measurement of solar array discharges in a simulated spaceenvironment

A spacecraft in a plasma builds up charge on all the dielectric surfaces and interfaces. Once the net charge exceeds the dielectric breakdown of the material, a discharge occurs. One of the more susceptible pieces of equipment is the antenna/receiver system. The radiated E-field may be strong enough to create an ambiguous signal which may be misinterpreted by the system electronics and cause a system malfunction. A technique is developed to monitor the radiated E-field of materials discharging in an electron environment, using vacuum chambers for measuring the material discharges which are made of highly reflective materials. These chambers affect the radiated E-field due to multiple reflections from the walls. The technique developed defines a method for correcting the effects caused by the measurement facilities. The methodology is: monitor the radiated E-field with a broadband dipole antenna, and digitize the radiated signal as a function of time. Determine the frequency response of the radiated E-field using an FFT algorithm. Measure the transmission and reflection characteristics of the two-port network inside the measurement chamber, and determine the impedance network from the measured E-parameters across the frequency band of interest. Transform the measured E-field frequency response through the impedance network to obtain the frequency response of the actual radiated discharge current. Find the inverse FFT of this response to obtain the actual radiated discharge current response. This technique aids in the prediction of the E-field coupling into receive antennas on-board actual satellites