Light Amplification and Efficient Electroluminescence from a Solution-Processable Diketopyrrolopyrrole Derivative via Triplet-to-Singlet Upconversion

Over the years, achieving efficient electroluminescence (EL) while simultaneously having low light amplification thresholds under optical excitation has been the key to progression toward the long-thought objective of electrically pumped organic lasers. While significant progress in this regard has been made for organic semiconductors emitting in the blue–green region of the visible spectrum, organic laser dyes with low-energy emission (>600 nm) still suffer from high amplified spontaneous emission (ASE) thresholds and low external quantum efficiencies (EQEs) in devices. Herein, low ASE thresholds and efficient EL are reported from a solution-processable organic laser dye dithiophenyl diketopyrrolopyrrole (DT-DPP). The ASE threshold of 4 µJ cm⁻² at the wavelength of 620 nm is obtained while making constructive use of triplet excitons by doping DT-DPP in a green-emitting host matrix, which exhibits thermally activated delayed fluorescence (TADF). The organic light-emitting diode fabricated from this system gives a high EQE of 7.9% due to the efficient utilization of triplet excitons. Transient EL studies further show that a high reverse intersystem crossing rate is crucial in achieving lasing under electrical pumping from such TADF-assisted fluorescent systems.     

Characterization of a 90° microstrip bend with arbitrary mitervia the time-domain finite difference method

A 90° microstrip bend with an arbitrary miter is characterized using the finite difference time-domain (FDTD) method. In this method, to simplify computations, the microstrip structure is enclosed by four electric walls; thus radiation effects are neglected. Time histories generated by FDTD techniques are Fourier-transformed to yield broadband scattering parameters of the microstrip bend. A miter is introduced to improve the transmission characteristics of the bend, and an optimal miter length is found such that the reflection from the microstrip bend over a broad frequency range is minimized     

基于FPGA设计航空电子系统

基于现场可编程门阵列(FPGA)核心的实施体现了先进的现代航空电子设计方法。这项技术具有多种优势,如废弃组件管理、降低设计风险、提高集成度、减小体积、降低功耗和提高故障平均间隔时间(MTBF)等,吸引着用户将原来的系统转移到此项技术。MIL-STD-1553的市场可能随着这种趋势而繁荣起来;事实上,某些客户已经觉得这项技术的实施有点姗姗来迟。MIL-STD-1553核心带来了多种好处,它代表着彻底告别了ASIC传统。FPGA中加入一项知识产权核心,就获得了一种与众不同的特性,而成为一个非常专业的高级子系统。这为增强MIL-STD-1553的设…     

Highly Efficient,Solution‐Processed,Single‐Layer,Electrophosphorescent Diodes and the Effect of Molecular Dipole Moment

A new family of highly soluble electrophosphorescent dopants based on a series of tris‐cyclometalated iridium(III) complexes (1–4) of 2‐(carbazol‐3‐yl)‐4/5‐R‐pyridine ligands with varying molecular dipole strengths have been synthesized. Highly efficient, solution‐processed, single‐layer, electrophosphorescent diodes utilizing these complexes have been prepared and characterized. The high triplet energy poly(9‐vinylcarbazole) PVK is used as a host polymer doped with 2‐(4‐biphenylyl)‐5‐(4‐tert‐butyl‐phenyl)‐1,3,4‐oxadiazole (PBD) for electron transport. Devices with a current efficiency of 40 cd A^?1 corresponding to an EQE of 12% can thus be achieved. The effect of the type and position of the substituent (electron‐withdrawing group (CF₃) and electron‐donating group (OMe)) on the molecular dipole moment of the complexes has been investigated. A correlation between the absorption strength of the singlet metal‐to‐ligand charge‐transfer (¹MLCT) transition and the luminance spectral red shift as a function of solvent polarity is observed. The strength of the transition dipole moments for complexes 1–4 has also been obtained from TD‐DFT computations, and is found to be consistent with the observed molecular dipole moments of these complexes. The relatively long lifetime of the excitons of the phosphorescence (microseconds) compared to the charge‐carrier scattering time (less than nanoseconds), allows the transition dipole moment to be considered as a “quasi permanent dipole”. Therefore, the carrier mobility is sufficiently affected by the long‐lived transition dipole moments of the phosphorescent molecules, which are randomly oriented in the medium. The dopant dipoles cause positional and energetic disorder because of the locally modified polarization energy. Furthermore, the electron‐withdrawing group CF₃ induces strong carrier dispersion that enhances the electron mobility. Therefore, the strong transition dipole moment in complexes 3 and 4 perturbs both electron and hole mobilities, yielding a reduction in exciton formation and an increase in the device dark current, thereby decreasing the device efficiency.     

一种带可配置插值滤波器的14-Bit 1-GS/s 数模转换器

A programmable 14-bit 1-GS/s current-steering digital-to-analog converter is presented.It features a selectable interpolation rate(2x/4x/8x) with a programmable interpolation filter.To improve the high-frequency performance,a "fast switching" technique that adds additional biasing to the current-switch is adopted.The datadependent clock loading effect is also minimized with an improved switch control by using a double latch.This DAC is implemented in 65 nra CMOS technology with an active area of 1.56 mm~2.The measured SFDRs are 70.05 dB at 250 MS/s for 120.65 MHz input sine-wave signal and 64.24 dB at 960 MS/s for 56.3 MHz input sine-wave signal,respectively.     

TPS6211x电源供应设计的实际考虑

作者:Jeff Falin、Bill Johns·电源管理产品/便携式电源DC/DC应用TPS6211x dc/dc转换器是一种同步降压转换器,其输入电压最高可达17V,输出电压范围为1.2-16V,输出电流高达1.5A。该器件可以高效地将两节锂离子电池、铅酸蓄电池或12V-15V系统电压降至5V、3.3V或者更低。图1为典型应用电路。图1:典型应用本文将提供TPS62111x降压转换器的示例应用并对关键特性进行总结,以供实际设计参考。外部组件的尺寸要求集成FET及内部补偿功能可进一步减少外部组件教。假设不使用集成输出电压与输入电压监控电路,则固定输出电压(5V或3.3V)时仅…     

Electrical characteristics of schottky barriers on 4H-SiC: The effects of barrier height nonuniformity

Electrical properties, including current-voltage (I-V) and capacitance-voltage (C-V) characteristics, have been measured on a large number of Ti, Ni, and Pt-based Schottky barrier diodes on 4H-SiC epilayers. Various nonideal behaviors are frequently observed, including ideality factors greater than one, anomalously low I-V barrier heights, and excess leakage currents at low forward bias and in reverse bias. The nonidealities are highly nonuniform across individual wafers and from wafer to wafer. We find a pronounced linear correlation between I-V barrier height and ideality factor for each metal, while C-V barrier heights remain constant. Electron beam induced current (EBIC) imaging strongly suggests that the nonidealities result from localized low barrier height patches. These patches are related to discrete crystal defects, which become visible as recombination centers in the EBIC images. Alternative explanations involving generation-recombination current, uniform interfacial layers, and effects related to the periphery are ruled out.     

Development and validation of a Monte Carlo simulation of photon transport in an Anger camera

The geometric component of the point spread function (PSF) of a gamma camera collimator can be determined analytically, and the penetration component can be calculated readily by numerical ray-tracing. A Monte Carlo simulation of photon transport which includes collimator scatter is developed. The simulation was implemented with an array processor which propagates up to 1024 photons in parallel, allowing accurate estimates of the total radial PSF in less than a day. The simulation was tested by imaging monoenergetic point sources of Tc-99m, Cr-51, and Sr-85 (140, 320, and 514 keV, respectively) on a General Electric Star Cam with low-energy, general-purpose, and medium-energy collimators. Comparisons of measured and simulated PSFs demonstrate the validity of the model and the significance of collimator scatter in the degradation of image quality.     

Far infrared measurements of bulk and surface phonons in GaAs/AlAs superlattices

We have used far-infrared oblique-incidence reflection spectroscopy to study bulk phonon polaritons, and attenuated total reflection (ATR) spectroscopy to study surface phonon polaritons, in long-period GaAs/Al_xGa_1?xAs and short-period GaAs/AlAs superlattices. Results on the former are in good agreement with an effective-medium bulk-slab model of the dielectric tensor of the superlattice; results on the latter are analysed in terms of a model that contains dielectric-tensor contributions from the confined optic phonons.