OSEK/VDX——汽车电子系统的开放式平台

介绍了当前在国际汽车工业界日益占据主导地位的汽车电子系统开放式平台--OSEK/VDX体系.详细地论述了这种体系的由来、运行机制和最新的发展动向,以及它对汽车电子技术发展的深远影响.     

高分辨率电阻率测井仪在薄层评价中的应用

传统的测井仪器无法克服纵向分辨率和径向探测深度这一矛盾，高分辨率电阻率测井仪（HDRT）测量精度好、探测深度大且垂向分辨率高，能够准确识别薄互层、评价薄油气层，准确记录油层厚度，可为精细描述油气田地下地质状态提供更多依据。     

皮革去污上光用乳化蜡的研制

采用石蜡、微晶蜡为主要原料 ,经实验选出了以水为稀释剂的乳化型皮革去污上光蜡。实验优化的配方为石蜡 12 .5 g ,微晶蜡 8.0 g ,硬脂酸 8.5g ,三乙醇胺 5 .5 g ,水量 70 (涂用 )或 130 g(喷用 )。反应条件为乳化时间 4 0min ,搅拌速度 5 0 0～ 70 0r/min ,乳化温度 90℃。制得上光剂产品的去污性能可与用去污剂单独处理的效果相当 ,亮度可达 6 6 .7。     

A new family of yeast genes implicated in ergosterol synthesis is related to the human oxysterol binding protein

We have identified three yeast genes, KES1, HES1 and OSH1, whose products show homology to the human oxysterol binding protein (OSBP). Mutations in these genes resulted in pleiotropic sterol-related phenotypes. These include tryptophan-transport defects and nystatin resistance, shown by double and triple mutants. In addition, mutant combinations showed small but apparently cumulative reductions in membrane ergosterol levels. The three yeast genes are also functionally related as overexpression of HES1 or KES1 alleviated the tryptophan-transport defect in kes1Δ or osh1Δ mutants, respectively. Our study implicates this new yeast gene family in ergosterol synthesis and provides comparative evidence of a role for human OSBP in cholesterol synthesis.     

Ti-23Al-14Nb-3V合金氩弧焊接头的显微组织及其力学性能

研究了预热对Ｔｉ－２３Ａｌ－１４Ｎｂ－３Ｖ合金焊接性，特别是对消除氩弧焊冷裂纹的作用以及对接头显微组织和力学性能的影响。结果表明，焊前预热可有效降低该合金的冷裂倾向。经预热处理后，焊缝区的结晶层状线消失，热影响区的硬度峰得到缓和，整个焊缝的显微硬度分布趋于均匀，但焊缝区的枝晶发生粗化，热影响区有所扩大。焊件接头的拉伸试验表明，预热可使焊缝区的接头强度系数增加，但无论预热与否，接头强度均低于母材强度，且不显示宏观塑性。     

Selective and nonselective wet etching of Zn0.9Mg0.1O/ZnO

Wet etch rates at 25°C for Zn_0.9Mg_0.1O grown on sapphire substrates by pulsed laser deposition (PLD) were in the range 300–1100 nm · min⁻¹ with HCl/H₂O (5×10⁻³−2×10⁻² M) and 120–300 nm · min⁻¹ with H₃PO₄/H₂O (5×10⁻³−2×10⁻² M). Both of these dilute mixtures exhibited diffusion-limited etching, with thermal activation energies of 2–3 kCal · mol⁻¹. By sharp contrast, the etch rates for ZnO also grown on sapphire by PLD were much slower in similar solutions, with rates of 1.2–50 nm · min⁻¹ in HCl/H₂O (0.01–1.2 M) and 12–54 nm · min⁻¹ in H₃PO₄/H₂O (0.02–0.15 M). The etching was reaction limited over the temperature range 25–75°C, with activation energies close to 6 kCal · mol⁻¹. The resulting selectivity of Zn_0.9Mg_0.1O over ZnO can be a high as ∼400 with HCl and ∼30 with H₃PO₄.     

Olefins from conventional and heavy feedstocks: Energy use in steam cracking and alternative processes

Steam cracking for the production of light olefins, such as ethylene and propylene, is the single most energy-consuming process in the chemical industry. This paper reviews conventional steam cracking and innovative olefin technologies in terms of energy efficiency. It is found that the pyrolysis section of a naphtha steam cracker alone consumes approximately 65% of the total process energy and approximately 75% of the total exergy loss. A family portrait of olefin technologies by feedstocks is drawn to search for alternatives. An overview of state-of-the-art naphtha cracking technologies shows that approximately 20% savings on the current average process energy use are possible. Advanced naphtha cracking technologies in the pyrolysis section, such as advanced coil and furnace materials, could together lead to up to approximately 20% savings on the process energy use by state-of-the-art technologies. Improvements in the compression and separation sections could together lead to up to approximately 15% savings. Alternative processes, i.e. catalytic olefin technologies, can save up to approximately 20%.     

中国香港电信盈科公司近期经营业绩分析

中国香港电信与盈科数码动力有限公司合并以后更名为电信盈科。它由一家以技术为主的电信公司转型为亚太地区、特别是两岸三地的商界及个人客户提供服务的综合通信服务供应商，主要提供电话服务、互联网、商企电贸服务、数据中心、客户联络中心、环球通信服务和基建业务。分析了2001-2002年上半年其电信、商企电贸、基建以及与Telstra结盟等业务市场的经营情况。     

可编程计算器辅助测量施工放线

昌马水库工程是甘肃省重点工程，在施工中对测量放线要求较高，为了提高放线精度及效率，在放线中引入可编程序的casio fk一4500P计算器配合，迅速处理放线数据，取得了可喜的效果。     

Fabrication and characteristics of high-speed implant-confined index-guided lateral-current 850-nm vertical cavity surface-emitting lasers

Process technology of high-speed implant-apertured index-guide lateral-current-injection top dielectric-mirror quantum-well 850-nm vertical cavity surface-emitting lasers (VCSELs) has been developed. Oxygen and helium implantation for aperture definition and extrinsic capacitance reduction, dielectric mirror formation, p- and n-ohmic contact formation, VCSEL resistance, and thermal analysis were investigated. Employing this technology, GaAs/AlGaAs-based 850-nm VCSELs with small signal modulation bandwidths up to 11.5 Gb/s and an eye diagram generated at 12 Gb/s by a pseudorandom bit sequence of 2/sup 31/-1 were achieved. The bit-error rates were below 10/sup -13/. The threshold current is as low as 0.8 mA for 7-/spl mu/m-diameter current apertures and typical slope efficiencies of 0.45-0.5 mA/mW were obtained.