Floating-island TFT leakage caused by process step reduction

The leakage mechanism for a top-gate thin-film transistor (TFT) produced using the fewest process steps in the industry is analyzed in order to achieve a high-contrast liquid crystal display (LCD). Using a T-shaped TFT structure, the OFF and ON channel lengths are defined independently, so that the leakage can be reduced with no ON current decrease     

Modeling of Energy Density Distribution in Rock Mass on the Basis of Seismotectonic and Geodetic Data

Using the focal mechanisms of earthquakes taken place from 1950 to 1996, the type and direction of principal strains were established, which made it possible to determine the volume stress-strain state of the south-east flank of the Baikal rift zone on the basis of the inverse problem solution. The variations in the stress-strain fields and spatial distribution of the stored potential energy density were found by the displacements of the daylight surface points in Tunkinsk geodetic proving ground in 1975 - 1986.     

Experimental Electronuclear Setup at the Institute of Theoretical and Experimental Physics

The purpose and current construction status, at the Institute of Theoretical and Experimental Physics, of an experimental electronuclear setup, combining a pulsed proton linear accelerator (36 MeV, 0.5 mA) and a subcritical blanket thermal-power assembly 100 kW, are discussed. The main equipment is already available or is being built in industry. The setup can be used to investigate the dynamics of the interaction of a linac–driver and a subcritical reactor and problems concerning the accelerator–driver and the target–blanket assembly. The proton beams and neutron fluxes will be used for applied purposes. In the future it will be possible to increase substantially the current and energy of the proton beam.     

Anfangsvorgänge bei Lichtenbergschen Figuren

Zusammenfassung Aufnahmen von Lichtenbergschen Figuren mit kurzen Spannungsstößen zeigen, daß bisher bekanntgewordene Bilder solcher Entladungsfiguren bereits ein verhältnismäßig weit vorgeschrittenes Stadium darstellen. Es gelingt mittels kurzer Stöße erste lawinenartige Anfänge der Figuren festzuhalten und einiges über Vorgänge im Anfangsstadium herauszulesen. Die negative Figur beginnt lawinenförmig an bevorzugten Stellen der Kathode. Bei nebeneinander entstandenen Lawinen ist sehr gut die gegenseitige Abstoßung infolge gleicher Ladung zu beobachten. Die Entladung hat einen geschichteten Aufbau. Die positiven Figuren bilden sich später aus. Es sprechen jedoch bisher keinerlei Anzeichen für ein Hinwachsen der Fäden zur Anode. Die Kanäle verjüngen sich zur Anode hin und selbst bei kurzen Stoßzeiten endet kein einziger vor der Anode. Auch die Art der gegenseitigen Abstoßung der positiven Fäden spricht mehr für ein Vorwachsen von der Anode aus. Aus den Farbaufnahmen ergibt sich für die filmschwärzende Strahlung eine Wellenlänge unter 450 m.     

Influence of inhibitor addition on the corrosion protection performance of sol–gel coatings on AA2024

Sol–gel films are actively investigated during the last decade as possible candidates for environmentally friendly pre-treatments. However, the important drawback in this case is the lack of active corrosion protection and self-healing ability.     

Chemical changes in polyvinyl fluoride during the process of fibre-spinning

Conclusions The change in some properties of polyvinyl fluoride during the process of fibre spinning has been investigated.It has been found that during the process of converting PVF powder into fibre, the degree of polymer crystallinity plus its resistance to thermal and thermooxidative degradation is increased; depending on the spinning regime, the densities and physicomechanical properties of PVF fibres are different.Translated from Khimicheskie Volokna, No. 4, pp. 34–35, July–August, 1984.     

A new polysilicon CMOS self-aligned double-gate TFT technology

In this paper, a new polysilicon CMOS self-aligned double-gate thin-film transistor (SA-DG TFT) technology is proposed and experimentally demonstrated. The self-alignment between the top- and bottom-gate is realized by a backlight exposure technique. The structure has an ultrathin channel region (300 /spl Aring/) and a thick source/drain region. Experimental results show that this technology provides excellent current saturation due to a combination of the effective reduction in the drain field and the full depletion of the ultrathin channel. Moreover, for n-channel devices, the SA-DG TFT has a 4.2 times higher on-current (V/sub gs/=20V) as compared to the conventional single-gate TFT. Whereas for the p-channel devices, the SADG TFT has a 3.6 times higher on-current (V/sub gs/=-20V) compared to the conventional single-gate device.