High-performance MIM capacitor using ALD high-k HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectrics

For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF//spl mu/m/sup 2/ from 10 kHz up to 20 GHz, very low leakage current of 3.2 /spl times/ 10/sup -8/ A/cm/sup 2/ at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V/sup 2/, temperature coefficient of capacitance of 182 ppm//spl deg/C, and high breakdown field of /spl sim/6 MV/cm as well as promising reliability. As a result, the HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications.     

抗真菌蛋白Rs-AFP2基因定点突变及其对大肠杆菌中表达的影响

为了研究遗传密码子对表达调控的影响,利用PCR重叠延伸法,对萝卜抗真菌蛋白Rs-AFP2基因编码序列区的部分核苷酸进行沉默突变,构建突变体Rs-AFPm.序列分析表明,PCR产物全长240bp,有一个阅读框,编码的蛋白由29个氨基酸的信号肽和51个氨基酸的抗真菌蛋白组成.突变体与突变前的Rs-AFP2基因相比,在编码区第3号氨基酸Lys相差一个碱基(TTG→TTA),第5号氨基酸Gln相差一个碱基(CAG→CAA),第6号稀有密码子Arg相差两个碱基(CAG→CGA).重新合成引物,将切除信号肽的Rs-AFP2基因和Rs-AFPm基因与原核表达载体pET-21b(+)分别重组到大肠杆菌BL21菌株.IPTG诱导后,二者均得到了表达.软件分析显示,突变前pETAFPo表达产物占全菌蛋白的3%,突变后pETAFPm的表达产物占全菌蛋白含量的8%;表达蛋白主要以包涵体的形式存在,包涵体经超声波破碎后,蛋白质复性,抑菌结果表明,pETAFPm表达产物的抑菌半径大于pETAFP2表达产物的抑菌半径.这些都说明改造后的Rs-AFPm基因与Rs-AFP2基因相比,已有效地提高表达量.     

抗乙肝病毒表面抗原PreS1(20-47)的单链抗体在转基因烟草根分泌物中的初步表达

为探索利用植物根分泌表达重组蛋白的可行性，构建了含有抗乙肝病毒表面抗原PreS1(20—47)单链抗体(ScFv)基因的表达载体。该ScFv基因转化烟草后在烟草根部细胞的细胞质和内质网中获得表达。实验结果表明，5’端融合ER导向信号肽的重组ScFv可通过根分泌表达。     

曲线轮廓汉字的网格适配技术

要提高曲线轮廓汉字的还原质量, 需要在字形还原时采用网格适配技术本文介绍了网格适配的基本原理, 并在分析汉字字形还原失真现象的基础上, 给出了我们自己设计并实现的适合于曲线轮廓汉字特点的二种网格适配方法, 即动态的补象素算法和曲线轮廓汉字的技术     

大系统分散鲁棒容错控制的进展及主要成果

综述了近２０年来关联大系统分散鲁棒容错控制的研究动态及取得的主要成果。说明了统一地研究分散鲁棒容错控制的必要性。在分散控制、鲁棒控制和容错控制研究领域内，分析了各种设计方法的主导思想及实质；指出了这些研究成果的意义与存在的问题。文中着重论述了分散、鲁棒、容错控制研究方法的发展途径。     

软X射线对血液有形成分表面电荷的影响——2、淋巴细胞和血小板膜电荷的变化

软X射线不仅能引起红细胞表面电荷的变化,同时也能导致淋巴细胞和血小板表面电荷下降,表现为照射后它们的电泳率下降。低剂量范围内,这种电荷的变化是暂时性的,照后4小时降到最低点,24小时后恢复到对照的水平。细胞电泳率的下降与辐射剂量相关。淋巴细胞是一个复杂的细胞群,正常状态下,按细胞在电场中泳动速度的快慢,可分为两个组分:快峰为T细胞,慢峰为B细胞。软X射线照射以后,T和B细胞的电泳率皆减慢,频数分布峰值下降,离散度加大。血小板成分单一,电泳率较一致。 从照射浓集的血小板再加回自身血浆中电泳率的下降较照射血浆再加到血小板中的电泳率下降大得多;受照射的血小板在磷酸缓冲液中电泳率下降较在血浆悬液中严重得多;2000 rad照后,悬浮于血浆中的血小板电泳率能恢复,而悬浮于磷酸缓冲液中则不能恢复,三个方面来看,血浆中可能存在抗辐射因子。超氧化物岐化酶能有效地预防血小板电泳率的下降,从而可阻止血小板的凝聚。     

野外大气扩散试验中四面体气球示踪实验的初步评价

1985年11月在瑞士北部进行了一次以探讨“冷池”条件下的扩散和湍流特征为目的的国际野外大气试验,本文介绍其中的四面体气球示踪实验的结果。一共进行了三次由雷达跟踪的四面体示踪实验,释放了10个四面体球。按多轨迹法和单轨迹法分别估算并比较了其中两次示踪实验得到的水平扩散参数σ_y,探讨了风摆效应的贡献。采用“体源模式”并结合单轨迹法估算了微弱风场不定风向条件下的扩散参数,分析了静风,弱风条件下的水平风向标准差和湍流强度。     

On structural and high temperature electrochemical properties of ZrO2 thin film coating on Zr metal produced by carbonate melt

Melt of NaCO₃ can favor oxidation of Zr to form ZrO₂ thin film on Zr surface, which is used to make Zr/ZrO₂ oxidation/reduction electrode of pH sensor for testing elevated temperature aqueous solutions. Using SEM, EPMA, XPS, EXAFS and HRTEM, we found that ZrO₂ film is tightness and solid with 20 μm thickness composed by nanometer-sized monoclinic crystals. Zr/ZrO₂ interface is characterized of zoning structure according to topography and chemical composition in five zones: oxygen-rich ZrO₂, ZrO₂, oxygen-rich Zr metal, oxygen-bearing Zr and Zr from outmost to center. Melt oxidation process of Zr involved oxidation time, air and temperature. The air is important effect on structural and electrochemical properties of ZrO₂ thin film for making elevate temperature electrochemical sensor. If oxygen air largely presented in carbonate melting process, ZrO₂ thin film is not tightness and not for oxidation/reduction electrode.     

Electrical conductivity and gas sensitivity of Zn-Sb-O thick films

The thick film of Zn-Sb-O was prepared by coating the paste of nanoparticles mixture (Sb₂O₃:ZnO=1:3) on the alumina substrate, followed by sintering at 500-900 °C for 2 h in air. The electrical resistance and gas-sensing properties to benzene, alcohol and acetone of Zn-Sb-O films were found to be dependent on the change of phase structure caused by sintering temperature.