Efficient design/simulation algorithms for simultaneous switching noise in leadframe packages

 Two new modeling and simulation approaches for Simultaneous Switching Noise (SSN) are described and compared to “brute force” simulation by SPICE. Both simulation accuracy and simulation run-time are considered. The two new approaches are: 1) the “effective inductance” method, in which an approximate, very efficient method of extracting an SSN L _eff  is utilized; and 2) the “macromodel” method, in which the complex inductance network responsible for SSN is represented by only a few dominant poles in the frequency domain and the time domain response is obtained by an efficient convolution algorithm. Both approaches are shown to be accurate and fast, but only the effective inductance algorithm is robust in numerical convergence. Received: 19 March 1997 / Accepted: 25 March 1997     

The dominance of the K I-field for a crack under stress wave loading

The extent of the dominant singular field is investigated for a finite crack under stress wave loading. Using a boundary integral equation method the complete solution as well as the near field solution is determined. A comparison of the two fields indicates that the singular field dominates within a small domain at the crack tip. The size of the dominance region in the dynamic case may be very different from that in the static case.     

Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET

An analytical expression for both band-to-band and band-trap-band indirect tunnelings is used to study the gate-induced drain leakage (GIDL) current of MOSFETs measured before and after hot-carrier stress. The voltage and temperature dependence of GIDL are characterized. Both results show that interface traps situated near the midgap participate in the conduction of GIDL, and band-trap-band indirect tunneling could be the major mechanism. This is further supported by the fact that the percentage increase in GIDL induced by hot-carrier stress is about the same as the corresponding increase in interface-trap density. On the other hand, under low-field conditions, trap-assisted Poole–Frenkle emission dominates over tunneling for temperatures even well below room temperature.     

Effects of thymectomy and glucocorticoid therapy on peripheral lymphocytes in myasthenia gravis

Clinical manifestations and peripheral blood lymphocyte subset changes were studied in patients with myasthenia gravis (MG) to elucidate the mechanism of clinical improvement following treatment, with thymectomy (Tx) or glucocorticoid (GC) therapy. The changes found were: 1. There was a significant increase in percentages of CD3+, CD29+ CD4+ cells and CD4/CD8 ratio and a significant decrease in percentages of CD8+ and CD16,56+ cells in patients who had never been treated with any immune therapy. 2. After Tx or GC therapy, CD3+ and CD4+, CD29+ cells were decreased, but the number CD19+ and CD16, CD56 cells did not change. 3. Tx had a special effect on CD8+ cells. In most of the patients who showed clinical improvement after Tx, CD8+ cells were increased and CD4/CD8 ratio wad decreased. 4. Anti-acetylcholine receptor (AChRAb) titers were markedly decreased after GC therapy. These results indicate that there were obvious abnormalities in cell-mediated immunity in addition to those in humoral immunity in myasthenia gravis. These abnormalities tended to be normalized after Tx or GC therapy.     

Effects of hot carrier induced interface state generation insubmicron LDD MOSFET's

A two-dimensional numerical simulation including a new interface state generation model has been developed to study the performance variation of a LDD MOSFET after a dc voltage stress. The spatial distribution of hot carrier induced interface states is calculated with a breaking silicon-hydrogen bond model. Mobility degradation and reduction of conduction charge due to interface traps are considered. A 0.6 μm LDD MOSFET was fabricated. The drain current degradation and the substrate current variation after a stress were characterized to compare the simulation. A reduction of the substrate current at V_g ≃0.5 V_d in a stressed device was observed from both the measurement and the simulation. Our study reveals that the reduction is attributed to a distance between a maximum channel electric field and generated interface states     

Evaluation of absorption and emission cross sections of Er-dopedLiNbO3 for application to integrated optic amplifiers

The polarization-dependent absorption and emission spectra of the ⁴I_13/2-⁴I_15/2 transition (λ~1.5 μm) in single crystal bulk Er:LiNbO₃ have been measured. Low-temperature (10 K) measurements of the Stark split energy levels of these two manifolds indicate at least two Er³⁺ sites. McCumber theory is applied to determine the Er:LiNbO₃ absorption and emission cross sections. These values are used to calculate the gain characteristics of Er:LiNbO₃ channel waveguides. Calculations indicate that a gain of 10 dB is achievable in a waveguide of several centimeters using ~20-mW pump power     

我国压铸行业及压铸机制造业的情况介绍

压力铸造（简称压铸）是金属成型技术中的一种。由于压铸生产技术的生产效率高、产品质量好、经济效益好，因此，用压铸方法生产出的零件（即压铸件）得到广泛的应用，遍及各个工业领域。其中，汽车和摩托车等交通工具作为支柱产业成为压铸零件的最大用户。航空、航天、兵器、电子等工业都是压铸零件的重要用户；还有五金、灯具、玩具、家电、电动及风动工具等行业也都大量地加以采用。     

Low RF noise and power loss for ion-implanted Si having an improved implantation process

Very-low-transmission line noise of <0.25 dB at 18 GHz and low power loss /spl les/0.6 dB at 110 GHz have been measured on transmission lines fabricated on proton-implanted Si. In contrast, a standard Si substrate gave much higher noise of 2.5 dB and worse power loss of 5 dB. The good RF integrity of proton-implanted Si results from the high isolation impedance to ground, as analyzed by an equivalent circuit model. The proton implantation is also done after forming the transmission lines at a reduced implantation energy of /spl sim/4 MeV. This enables easier process integration into current VLSI technology.