Dynamic Oscillation via Negative Differential Resistance in Type III Junction Organic/Two-Dimensional and Oxide/Two-Dimensional Transition Metal Dichalcogenide Diodes

Among many of 2D semiconductor-based devices, type III PN junction diodes are given special attentions due to their unique function, negative differential resistance (NDR). However, it has been found uneasy to achieve well-matched type III PN junctions from 2D–2D van der Waals heterojunctions. Here, the authors present other alternatives of type III heterojunctions, using 2D p-MoTe₂/organic n-type dipyrazino[2,3-f:2′,3′-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile (HAT-CN) and 2D p-WSe₂/n-MoO_x systems. Those junction diodes appear to well-demonstrate static and dynamic NDR behavior via resonant tunneling and electron–hole recombination. Extended to an inverter circuit, p-MoTe₂/n-HAT-CN diode enables multilevel inverter characteristics as monolithically integrated with p-MoTe₂ channel field effect transistor. The same NDR diode shows dynamic LC oscillation behavior under a constant DC voltage, connected to an external inductor. From p-WSe₂/n-MoO_x oxide diode, similar NDR behavior to those of p-MoTe₂/n-HAT-CN is again observed along with LC oscillations. The authors attribute these visible oscillation results to high peak-to-valley current ratios of their organic or oxide/2D heterojunction diodes.     

Progressive NO2 Sensors with Rapid Alarm and Persistent Memory-Type Responses for Wide-Range Sensing Using Antimony Triselenide Nanoflakes

Antimony triselenide (Sb₂Se₃) nanoflake-based nitrogen dioxide (NO₂) sensors exhibit a progressive bifunctional gas-sensing performance, with a rapid alarm for hazardous highly concentrated gases, and an advanced memory-type function for low-concentration (<1 ppm) monitoring repeated under potentially fatal exposure. Rectangular and cuboid shaped Sb₂Se₃ nanoflakes, comprising van der Waals planes with large surface areas and covalent bond planes with small areas, can rapidly detect a wide range of NO₂ gas concentrations from 0.1 to 100 ppm. These Sb₂Se₃ nanoflakes are found to be suitable for physisorption-based gas sensing owing to their anisotropic quasi-2D crystal structure with extremely enlarged van der Waals planes, where they are humidity-insensitive and consequently exhibit an extremely stable baseline current. The Sb₂Se₃ nanoflake sensor exhibits a room-temperature/low-voltage operation, which is noticeable owing to its low energy consumption and rapid response even under a NO₂ gas flow of only 1 ppm. As a result, the Sb₂Se₃ nanoflake sensor is suitable for the development of a rapid alarm system. Furthermore, the persistent gas-sensing conductivity of the sensor with a slow decaying current can enable the development of a progressive memory-type sensor that retains the previous signal under irregular gas injection at low concentrations.     

Ultra fast symmetry and SIMD-based projection-backprojection (SSP) algorithm for 3-D PET image reconstruction

Remarkable progress in positron emission tomography (PET) development has occurred in recent years, in hardware, software, and computer implementation of image reconstruction. Recent development in PET scanners such as the high-resolution research tomograph (HRRT) developed by CTI (now Siemens) represents such a case and is capable of greatly enhanced resolution as well as sensitivity. In these PET scanners, the amount of coincidence line data collected contains more than 4.5 x 10(9) coincidence lines of response generated by as many nuclear detectors as 120 000. This formidable amount of data and the reconstruction of this data set pose a real problem in HRRT and have also been of the major bottle neck in further developments of high resolution PET scanners as well as their applications. In these classes of PET scanners, therefore, obtaining one set of reconstructed images often requires many hours of image reconstruction. For example, in HRRT with full data collection in a normal brain scan (using SPAN 3), the image reconstruction time is close to 80 min, making it practically impossible to attempt any list-mode-based dynamic imaging since the image reconstruction time would take many days (as much as 43 h or more for 32-frame dynamic image reconstruction). To remedy this data-handling problem in image reconstruction, we developed a new algorithm based on the symmetry properties of the projection and backprojection processes, especially in the 3-D OSEM algorithm where multiples of projection and back-projection are required. In addition, the single-instruction multiple-data (SIMD) technique also allowed us to successfully incorporate the symmetry properties mentioned above, thereby effectively reducing the total image reconstruction time to a few minutes. We refer to this technique as the symmetry and SIMD-based projection-backprojection (SSP) technique or algorithm and the details of the technique will be discussed and an example of the application of the technique to the HRRT's OSEM algorithm will be presented as a demonstration.     

The Fabrication and Characterization of Single‐Component Polymeric White‐Light‐Emitting Diodes

By using Ni⁰‐mediated polymerization, we have systematically synthesized a series of fluorene‐based copolymers composed of blue‐, green‐, and red‐light‐emitting comonomers with a view to producing polymers with white‐light emission. 2,7‐Dibromo‐9,9‐dihexylfluorene, {4‐(2‐[2,5‐dibromo‐4‐{2‐(4‐diphenylamino‐phenyl)‐vinyl}‐phenyl]‐vinyl)‐phenyl}‐diphenylamine (DTPA), and 2‐{2‐(2‐[4‐{bis(4‐bromo‐phenyl)amino}‐phenyl]‐vinyl)‐6‐tert‐butyl‐pyran‐4‐ylidene}‐malononitrile (TPDCM) were used as the blue‐, green‐, and red‐light‐emitting comonomers, respectively. It was found that the emission spectra of the resulting copolymers could easily be tuned by varying their DTPA and TPDCM content. Thus with the appropriate red/green/blue (RGB) unit ratio, we were able to obtain white‐light emission from these copolymers. A white‐light‐emitting diode using the polyfluorene copolymer containing 3 % green‐emitting DTPA and 2 % red‐emitting TPDCM (PG3R2) with a structure of indium tin oxide/poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonic acid)/PG3R2/Ca/Al was found to exhibit a maximum brightness of 820 cd m^–2 at 11 V with Commission Internationale de L'Eclairage (CIE) coordinates of (0.33,0.35), which are close to the standard CIE coordinates for white‐light emission (0.33,0.33).     

Texture investigation of copper interconnects with a different line width

To understand the effect of line width on textural and microstructural evolution of Cu damascene interconnect, three Cu interconnects samples with different line widths are investigated. According to x-ray diffraction (XRD) results, the (111) texture is developed in all investigated lines. Scattered {111}〈112〉 and {111}〈110〉 texture components are present in 0.18-μm-width interconnect lines, and the {111}〈110〉 texture was developed in 2-μm-width interconnect lines. The directional changes of the (111) plane orientation with increased line width were investigated by XRD. In addition, microstructure and grain-boundary character distribution (GBCD) of Cu interconnect were measured using electron backscattered diffraction (EBSD) techniques. This measurement demonstrated that a bamboo-like microstructure is developed in the narrow line, and a polygranular structure is developed in the wider line. The fraction of ∑3 boundaries is increased as the line width increases but is decreased in the blanket film. A new interpretation of textural evolution in damascene interconnect lines after annealing is suggested, based on the state of stress and growth mechanisms of Cu deposits.     

Comparative Assessment of Adaptive Body-Bias SOI Pass-Transistor Logic

A very low voltage transconductor for video frequency range applications and compatible with standard CMOS technology is described. In the proposed transconductor, except the DC level shifter circuit (DCLS), the whole transconductor uses the main supply voltage [which can be as low as 1.5 V in a standard 0.6 μm CMOS technology] while the DCLS uses a simple charge-pump circuit as its supply voltage and has a very low current consumption. In addition, proper common-mode sense and charge-pump circuits are developed for this low-voltage application. Meanwhile, some techniques to improve the frequency response, linearity, and noise performance of the proposed transconductor are described. In a standard 0.6 μm CMOS technology and single 1.5 V supply, simulations show that the proposed transconductor futures a THD of −50 dB for 1.4 V_pp and 10 MHz input signal and −60 dB for 1.4 V_pp and 1 MHz signal where the threshold voltage of MOS transistors could be as high as 1 V. Based on the proposed transconductor, a lowpass filter with 700 kHz to 8 MHz programmable cutoff frequency and a bandpass 10.7 MHz second order filter were implemented. Armin Tajalli received the B.Sc. from Sharif University of Technology (SUT), Tehran, Iran, in 1997, and M.Sc. from Tehran Polytechnic University, Tehran, Iran, in 1999. From 1998 he has joint Emad Co. as a senior design engineer were he has worked on several industrial and R&D projects on analog and mixed-mode ICs. He received the award of the Best Design Engineer from Emad Co., 2001, the Kharazmi Award of Industrial Research and Development, Iran, 2002, and Presidential Award of the Best Iranian Researchers, in 2003. He is now working toward his PhD degree at SUT. His current interests are design of high speed circuits for telecommunication systems. Mojtaba Atarodi received the B.S.E.E. from Amir Kabir University of Technology (Tehran Polytechnic) in 1985, and M.Sc. degree in electrical engineering from the University of California, Irvine, in 1987. He received the Ph.D. degree from the University of Southern California (USC) on the subject of analog IC design in 1993. From 1993 to 1996 he worked with Linear Technology Corporation as a senior analog design engineer. Since then, he has been consulting with different IC companies. He is currently a visiting professor at Sharif University of Technology. He has published more than 30 technical papers in the area of analog and mixed-signal integrated circuit design as well as analog CAD tools.     

Voltage‐Mode 1.5 Gbps Interface Circuits for Chip‐to‐Chip Communication

In this paper, interface circuits that are suitable for point‐to‐point interconnection with an over 1 Gbps data rate per pin are proposed. To achieve a successful data transfer rate of multi‐gigabits per‐second between two chips with a point‐to‐point interconnection, the input receiver uses an on‐chip parallel terminator of the pass gate style, while the output driver uses the pullup and pulldown transistors of the diode‐connected style. In addition, the novel dynamic voltage level converter (DVLC) has solved such problems as the access time increase and valid data window reduction. These schemes were adopted on a 64 Mb DDR SRAM with a 1.5 Gbps data rate per pin and fabricated using a 0.10 µm dual gate oxide CMOS technology.     

Floating-patch MEMS antennas on HRS substrate for millimetre-wave applications

Novel floating-patch micro-electro-mechanical system (MEMS) antennas are proposed for millimetre-wave applications. The floating-patch MEMS antennas are fabricated on a high resistivity silicon (HRS) substrate using surface micromachining technology. Simulation and experimental results for reflection coefficients and radiation patterns are presented.     

A time-domain method with isotropic dispersion and increased stability on an overlapped lattice

A time-domain method on an overlapped lattice is presented for the accurate and efficient simulation of electromagnetic wave propagation through inhomogeneous media. The method comprises a superposition of complementary approximations to electromagnetic theory on a lattice. The discrete space-time (DST) method, is set on a pair of dual lattices whose field components are collocated on their respective lattice sites. The other, the time-domain element (TDE) method, is set on overlapping dual lattices whose field components are noncollocated. The TDE method is shown to be a generalization and reinterpretation of the Yee algorithm. The benefits of the combined algorithm over comparable methods include: (1) increased accuracy over larger bandwidths; (2) increased stability allowing larger time steps; (3) local stencil-satisfying boundary conditions on interfaces; (4) self-contained mathematical framework; (5) it is physically intuitive.     

Controller for digital audio power amplifier with bit stream input

A new controller for a digital audio amplifier with bit stream input is proposed. The proposed controller has excellent features such as wide error correction range and no limitation on the modulation index. The controller is implemented in the half-bridge class-D amplifier and performance is verified through experiments.