Plasma enhanced chemical vapor deposition of SiO2 films at low temperatures using SiCl4 and O2

Silicon dioxide films have been deposited by Plasma-Enhanced Chemical Vapor Deposition (PECVD) technique using SiCl₄ and O₂ as reactive materials. Infra-red transmittance, Auger electron spectroscopy analysis, ellipsometry, electrical, and chemical etch measurements have been used to characterize these films. It is possible to obtain good quality oxides at a substrate temperature of 200° C using a low flow of reactant gases. High flow of reactant gases results in highly non-homogeneous porous films. The best oxide films obtained show destructive breakdown at electrical fields above 4 MV/cm and a fixed charge density of the order of 2.6 × 10¹¹ charges/cm².     

Editorial: Security and Privacy in Internet of Things

Mobile Networks and Applications -     

Comparing the growth of a molecular semiconductor on amorphous and semi-crystalline polycarbonate substrates

Polymeric substrates are of importance in plastic electronics. However, polymeric surfaces can exhibit different morphologies depending on whether they are amorphous or semi-crystalline. This work focuses on the impact of the surface structure of bisphenol A polycarbonate substrates on the nucleation and growth of a p-type semi-conductor, namely zinc phthalocyanine (ZnPc). ZnPc films were deposited under high vacuum at different substrate temperatures on oriented semi-crystalline as well as amorphous substrates of PC. The oriented substrates of PC were prepared by a method combining mechanical rubbing and solvent induced crystallization: the substrates show a periodic and regular alternation of oriented crystalline lamellae. Grazing incidence X-ray diffraction shows that the crystalline lamellae of PC have a preferential (a, c) contact plane. Moreover, the substrates show a bilayer structure made of a 60 nm-thick semi-crystalline overlayer atop an amorphous underlayer. UV–vis spectroscopy shows that the polymorphism of the ZnPc films is not modified by the surface structure of the PC substrate (amorphous versus semi-crystalline). However, the statistical analysis of domain size and density versus substrate temperature T_s evidences different apparent activation energies of the growth mechanism. High Resolution Transmission Electron Microscopy suggests that twinning along a (2 ?1 0) plane accounts for the bifurcations of the in-plane b-axis direction of the ZnPc nanocrystals. On oriented substrates of PC, such bifurcations are partly suppressed by the nanocorrugation of the surface, resulting in larger apparent domain sizes and unidirectional in-plane orientation.     

Media-independent pre-authentication supporting secure interdomain handover optimization [architectures and protocols for mobility management in all-IP mobile networks]

Handovers may cause delays and packet losses that affect real-time communication performance. Mobility protocols at several layers are designed to support handover, but they need to be optimized to ensure high-quality application performance. Existing optimization techniques are not sufficient to take care of interdomain and intertechnology handovers involving different access technologies, such as Wi-Fi, GSM, CDMA, and WiMAX. We categorize several types of handover, describe handover delay components, and propose a handover optimization framework called media independent pre-authentication that can provide optimizations for interdomain and intertechnology handover in a manner that is transparent to mobility management protocols. In addition, we also present experimental results demonstrating that this framework can achieve a significant reduction in handover delays for both network-layer and application-layer mobility management protocols.     

Impact of the gain saturation dynamics in semiconductor optical amplifiers on the characteristics of an analog optical link

We evaluate both theoretically and experimentally the gain saturation dynamics of semiconductor optical amplifiers when inserted into an analog optical link. Its impact in terms of radio frequency response, nonlinearity, and noise is investigated. In particular, the frequency response is shown to be a peculiar high-pass filter exhibiting two characteristic frequencies.     

Matching degradation of threshold voltage and gate voltage of NMOSFET after Hot Carrier Injection stress

Device degradation modelling is more and more important for reliable circuit design. On MOSFET, the threshold voltage drift in time can lead to circuit performance degradation. In this study, V_T shift due to Hot Carrier Injection stress is accelerated on small width devices. V_T matching is also degraded during stress as a function of V_T deterioration. This width dependence allows explaining gate voltage matching behavior in the sub-threshold area used in low power analog applications.     

Efficient design of gallium arsenide Muller-C element

A Muller-C element is a fundamental building block of a handshake path in self-timed digital circuits. It is a basic event driven logic (EDL) gate, implementing the AND function for events. The authors present a new, improved design of the Muller-C element using GaAs MESFET technology. A static Muller-C gate is implemented that incorporates modifications of newly introduced, GaAs pseudodynamic latched logic family (PDLL) primitives. The circuit is characterised by very high speed and low power dissipation     

Alzheimer's diagnosis using eigenbrains and support vector machines

An accurate and early diagnosis of the Alzheimer's disease (AD) is of fundamental importance for the patient's medical treatment. Single photon emission computed tomography (SPECT) images are commonly used by physicians to assist the diagnosis. Presented is a computer-assisted diagnosis tool based in a principal component analysis (PCA) dimensional reduction of the feature space approach and a support vector machine (SVM) classification method for improving the AD diagnosis accuracy by means of SPECT images. The most relevant image features were selected under a PCA compression, which diagonalises the covariance matrix, and the extracted information was used to train an SVM classifier, which could classify new subjects in an unsupervised manner.     

A new method to quantify retention-failed cells of an EEPROM CAST

The cell array stress test (CAST) is a very simple tool to study one of the main issues of Non Volatile Memory reliability: data retention. However, it is not possible to easily quantify and localise the retention-failed cells of a CAST. Thus, a new experimental technique to localize and to quantify retention-failed EEPROM cells into a CAST is presented in this paper. This new technique is based on light emission microscopy; the aim is to observe light emission coming from cells and to localize their position with accuracy on CAST area. It is a visual and non destructive method which validity has been shown on cycled cells after a retention test.     

Spectral fuzzy classification: an application

Geographical information (including remotely sensed data) is usually imprecise, meaning that the boundaries between different phenomena are fuzzy. In fact, many classes in nature show internal gradual differences in species, health, age, moisture, as well other factors. If our classification model does not acknowledge that those classes are heterogeneous, and crisp classes are artificially imposed, a final careful analysis should always search for the consequences of such an unrealistic assumption. We consider the unsupervised algorithm presented by A. del Amo et al. (2000), and its application to a real image in Sevilla province (south Spain). Results are compared with those obtained from the ERDAS ISO-DATA classification program on the same image, showing the accuracy of our fuzzy approach. As a conclusion, it is pointed out that whenever real classes are natural fuzzy classes, with gradual transition between classes, then its fuzzy representation will be more easily understood, and therefore accepted by users