3D monolithic integration: Technological challenges and electrical results

After a short reminder of the principle of monolithic 3D integration, this paper firstly reviews the main technological challenges associated to this integration and proposes solutions to assess them. Wafer bonding is used to have perfect crystalline quality of the top layer at the wafer scale. Thermally stabilized silicide is developed to use standard salicidation scheme in the bottom layer. Finally a fully depleted SOI low temperature process is demonstrated for top layer processing (overall temperature kept below 650 °C). In a second part the electrical results obtained within this integration scheme are summarized: mixed Ge over Si invertor is demonstrated and electrostatic coupling between top and bottom layer is used to shift the threshold voltage of the top layer. Finally circuit opportunities such as stabilized SRAM or gain in density are investigated.     

Ultrahydrophobic PMMA micro- and nano-textured surfaces fabricated by optical lithography and plasma etching for X-ray diffraction studies

Polymeric (PMMA) ultrahydrophobic surfaces with contact angles up to about 170° have been fabricated and used in the context of synchrotron radiation experiments on biological droplets. The different microfabrication processes included either an optical lithography phase followed by a plasma texturing one or a single step deep reactive ion etch attack.The drying of several biological solution droplets has been monitored. Room temperature evaporation experiments (lysozyme, lactalbumin, cytochrome C, doxorubicin and synthesized peptides) finally result in the formation of easily detachable hollow residuals because of the low interaction between the ultrahydrophobic substrate and the aqueous droplet while pilot experiments (bovine insulin) in a sitting-drop environment bring to the formation of well defined crystals. Recent results about in situ X-ray diffraction experiments by SAXS & WAXS (Small and Wide Angle X-ray Scattering) μ-beam techniques confirm that the presence of such surfaces influences the formation of crystal or fibril structures. These substrates represent indeed a suitable support to study biological and inorganic droplets in a near contact-free environment exploiting the homogeneous evaporation rate induced by the ultrahydrophobicity of the system.     

Coupling dense and landmark-based approaches for nonrigid registration

In this paper, we investigate the introduction of cortical constraints for non rigid intersubject brain registration. We extract sulcal patterns with the active ribbon method, presented by Le Goualher et al. (1997). An energy based registration method (Hellier et al., 2001), which will be called photometric registration method in this paper, makes it possible to incorporate the matching of cortical sulci. The local sparse similarity and the photometric similarity are, thus, expressed in a unified framework. We show the benefits of cortical constraints on a database of 18 subjects, with global and local assessment of the registration. This new registration scheme has also been evaluated on functional magnetoencephalography data. We show that the anatomically constrained registration leads to a substantial reduction of the intersubject functional variability.     

Characterization of transient currents in HfO2 capacitors in the short timescale

We present a detailed experimental investigation of transient currents in HfO₂ capacitors in the short timescale. We show that the transient currents flowing through the capacitor plates when the gate voltage is reset to zero after a low voltage stress period follow a power-law time dependence t^−α (with α ? 1) over more than eight decades of time and down to the μs timescale. As transient currents in HfO₂ are largely increased with respect to the SiO₂ case, these results confirm that transient effects can be a severe issue for the successful integration of high-k dielectrics.     

Optimal design of Service Overlay Networks with economic and performance constraints

In the last years, Service Overlay Networks (SONs) have emerged as a promising means to address some of the issues (e.g. end‐to‐end QoS) affecting the current Internet and to favor the development and deployment of new value‐added Internet services. The deployment of an SON is a capital‐intensive investment, since bandwidth with certain QoS guarantees must be purchased from the individual network domains through bilateral Service Level Agreements. Thus, minimizing the economic cost of the logical end‐to‐end service delivery infrastructure is one of the key objectives for the SON provider. When a SON is aimed at end‐to‐end QoS provisioning, its topology must be designed so as to also satisfy the specific requirements of QoS‐sensitive applications. This paper deals with the problem of planning the SON topology in order to take into account both cost and QoS constraints. More specifically, the paper proposes a set of new algorithms for the design of an optimized SON topology, which minimizes the economic cost while simultaneously meeting bandwidth and delay constraints. A performance comparison among such algorithms is finally carried out. Copyright © 2009 John Wiley & Sons, Ltd.     

Doping efficiency and energy-level scheme in C60F48-doped zinc–tetraphenylporphyrin films

High resolution synchrotron-based core level spectroscopy was used to examine the energy level alignment at the interface of zinc–tetraphenylporphyrin films doped by the surface acceptor C₆₀F₄₈. Two distinct fluorofullerene charge states were identified, corresponding to ionized and neutral molecules, and their relative concentration as a function of coverage was used to evaluate the probability of occupation of the acceptor lowest unoccupied molecular orbital (LUMO). From an initial acceptor energy of ?0.25 eV, the C₆₀F₄₈ LUMO shifts upwards with coverage due to a doping-induced interfacial dipole potential, and stabilization of the LUMO at an energy 0.45 eV above the Fermi energy was obtained. While the energy difference upon saturation is consistent with the results obtained for other donor–acceptor systems that have been interpreted as Fermi level pinning, the present work shows that the energy offset is a direct consequence of the interplay between Fermi–Dirac statistics in combination with the interfacial dipole potential.     

Light Emission in the Unipolar Regime of Ambipolar Organic Field‐Effect Transistors

Light emission from ambipolar organic field‐effect transistors (OFETs) is often observed when they are operated in the unipolar regime. This is unexpected, the light emission should be completely suppressed, because in the unipolar regime only one type of charge carrier is accumulated. Here, an electroluminescent diketopyrrolopyrrole copolymer is investigated. Local potential measurements by scanning Kelvin probe microscopy reveal a recombination position that is unstable in time due to the presence of injection barriers. The electroluminescence and electrical transport have been numerically analyzed. It is shown that the counterintuitive unipolar light emission is quantitatively explained by injection of minority carriers into deep tail states of the semiconductor. The density of the injected minority carriers is small. Hence they are relatively immobile and they recombine close the contact with accumulated majority carriers. The unipolar light output is characterized by a constant efficiency independent of gate bias. It is argued that light emission from OFETs predominantly originates from the unipolar regime when the charge transport is injection limited.     

Variational optical flow computation in real time.

This paper investigates the usefulness of bidirectional multigrid methods for variational optical flow computations. Although these numerical schemes are among the fastest methods for solving equation systems, they are rarely applied in the field of computer vision. We demonstrate how to employ those numerical methods for the treatment of variational optical flow formulations and show that the efficiency of this approach even allows for real-time performance on standard PCs. As a representative for variational optic flow methods, we consider the recently introduced combined local-global method. It can be considered as a noise-robust generalization of the Horn and Schunck technique. We present a decoupled, as well as a coupled, version of the classical Gauss-Seidel solver, and we develop several multgrid implementations based on a discretization coarse grid approximation. In contrast, with standard bidirectional multigrid algorithms, we take advantage of intergrid transfer operators that allow for nondyadic grid hierarchies. As a consequence, no restrictions concerning the image size or the number of traversed levels have to be imposed. In the experimental section, we juxtapose the developed multigrid schemes and demonstrate their superior performance when compared to unidirectional multgrid methods and nonhierachical solvers. For the well-known 316 x 252 Yosemite sequence, we succeeded in computing the complete set of dense flow fields in three quarters of a second on a 3.06-GHz Pentium4 PC. This corresponds to a frame rate of 18 flow fields per second which outperforms the widely-used Gauss-Seidel method by almost three orders of magnitude.     

投影用高亮度发光二极管的快速发展

在过去三年中,微型显示投影发光二极管(LED)光学引擎的亮度显著地加速增长,在某种程度上超出了许多业内人士的期望。这种快速增长促进了液晶投影电视的出现。综述了应用于投影的LED的进展及相应产品。讨论了基于LED的光引擎的设计,展望了其亮度改进以及新产品研制的前景。     

Measurement of mobility in HEMT devices using high-order derivatives

In this paper, a novel approach to the measurement of mobility of GaAs HEMT devices is presented. The new approach employs high-order derivatives as a means of determining the parameters of the proposed new mobility equation. The new approach is compared to established mobility measurement methods, and shown to offer better accuracy. The results presented also consider the behavior of mobility in the linear and saturation bias regions. The mobility value extracted by this new method has permitted improvements to the MESFET/HEMT model when simulating the behavior of the device in the linear region. This is critical in many applications, such as in low current linear-mixing applications.