基体改性对C/C复合材料性能影响的研究(一)

本文从C/C复合材料的基体入手,研究了基体沥青、焦炭中添加氧化物的工艺条件及其在复合材料中的作用.结果表明,添加氧化物对基体改性,不仅能提高C/C复合材料的高温抗氧化性,也能对其它性能带来很大影响.只要控制适当的工艺条件,就可以得到高性能的C/C复合材料.     

Interactions between normal and tumoral tissues at the boundary of human anterior pituitary adenomas. An immunohistochemical study

Previously, the species complex Oncomelania hupensis, individuals of which act as intermediate hosts for the human bloodfluke Schistosoma japonicum, has been characterised by morphological and isoenzyme criteria. We have examined genetic variation between and within three subspecies of Oncomelania hupensis, i.e. O. h. hupensis (China), O. h. quadrasi (Philippines) and O. h. nosophora (Japan), by direct means using a PCR-based RFLP method. The subspecies of O. hupensis were readily distinguished by their characteristic restriction patterns, supporting isoenzyme data which suggests these may warrant species-specific status. No genetic variation was observed between O. h. quadrasi from different islands within the Philippines. In contrast, geographical isolates of O. h. hupensis differed markedly by this method indicating several genetically distinct populations of O. h. hupensis occur in China.     

NUMERICAL STUDY ON QUASI- STEADY FLOW OF NONNEWTONIAN FLUID IN SUCK-ROD PUMP

This paper presents a numerical method for simulation of the flow and thecalculated results of the quasi-steady axisymmetrical flow field and pressure distribution on valveball with power-law model for Non-Newtonian fluid in suck-rod pump.We believe the methodcan provide a foundation for further research and improvement of the design of suck-rod pump.     

厚膜导体的金属迁移研究

金属迁移能导致混合微电路发生灾难性失效。本文介绍一种简单易行的测试方法－水滴试验法，来测量厚膜电路的实际金属迁移率。用引方法测量时，发现Ｐｄ－Ａｇ导体的迁移率最大，Ｐｔ－Ａｕ导体的金属迁移率最小。     

溶质原子在再结晶运动晶界上偏聚的研究

Ｂ~（１０）（ｎ，α）Ｌｉ~７裂变反应的径迹显微照相技术被用来研究含硼Ｆｅ－３０％Ｎｉ合金高温热变形再结晶过程中硼在晶界上的偏聚行为，实验表明，含硼Ｆｅ－３０％Ｎｉ合金１０００℃热变形２０％再结晶过程中，运动晶界前方发生硼偏聚而后方发生贫硼现象，而在静止晶界上看不到硼偏聚，随着再结晶新晶粒的长大，运动晶界上的硼偏聚变弱。本文提出，可以用晶界对溶质原子热运动散射的量子理论来解释溶质原子在运动晶界上的偏聚现象。     

瞬态光的光电摄谱测量

“光电摄谱法”是一种辐射光谱计量参数的测量方法,此法解决了单次脉冲闪光灯辐射光谱相对能量分布的精确测量问题。本文介绍了这种方法的测量原理、方法和特点,同时阐述了对接收器件、光路系统和时控电器系统的要求,并以自行研制的闪光光谱测定仪为例,对其计量参数波长和相对能量的标定与校正给予了必要的讨论,最后以实测结果证实了该方法的可靠性。     

Intermodulation analysis of the collector-up InGaAs/InAlAs/InP HBTusing Volterra series

The intermodulation (IM) distortion of the collector-up InGaAs/InAlAs/InP heterojunction bipolar transistor (HBT) is analyzed using Volterra-series theory. A T-equivalent circuit is used for this analysis. The contribution and interaction of four nonlinear elements: base-emitter resistance, base-emitter capacitance, base-collector capacitance, and common base-current gain are analyzed. For the particular device under investigation, it is found that the cancellation effect is not significant and the base-emitter resistance nonlinearity dominates the third-order IM