A partial variational analysis of planar dielectric antennas

The reflection and radiation characteristics of a planar dielectric antenna with arbitrary geometrical configuration are analyzed numerically. A variational equation is first established based on the partial variational principle (PVP), and then solved by the finite element method coupled with the frontal solution technique. The radiation and boundary conditions are incorporated by combining the modal expansion method and the Green's function approach for exterior field representation. The reflection coefficients, the radiation patterns, and the directive and power gains of several antennas with linearized structures are studied and compared     

Proton-exchanged optical waveguides in LiNbO/sub 3/ using octanoic acid

Low-loss proton-exchanged planar waveguides in z-cut LiNbO/sub 3/ were fabricated and characterized optically using octanoic acid as a proton source. The waveguide exhibited a step-index profile with an index change of 0.118 measured at 0.633 mu m. The lowest waveguide propagation loss measured was 1.2 dB/cm, and it was reduced further to 0.4 dB/cm after annealing. The diffusion rate and the activation energy using this acid were found to be lower than those reported using other acids.<>     

Proton-exchanged LiNbO/sub 3/ optical waveguides using stearic acid

Proton-exchanged optical waveguides have been fabricated in z-cut LiNbO/sub 3/ using a new proton source: stearic acid. These waveguides were characterized optically and were found to exhibit a step index profile with Delta n=0.118 measured at 0.633 mu m. The propagation losses were typically around 1.5 dB/cm, and the diffusion constant and the activation energy for the proton-exchange process were measured to be 5*10/sup 6/ mu m/sup 2//h and 69 kJ/mol, respectively.<>     

Explicit finite difference vectorial beam propagation method

A vectorial beam propagation method (VBPM) is formulated and implemented using the explicit finite difference (EFD) scheme. The accuracy of semivectorial EFD-BPM, where the polarisation coupling is ignored but polarisation dependence is included, is found to be as good as that of full-vectorial EFD-BPM.<>     

Intermodulation distortion in a multiple-quantum-well semiconductor optical amplifier

The measurement of intermodulation distortion (IMD) induced by carrier-density modulation in a multiple-quantum-well (MQW) semiconductor amplifier is reported. The results show that MQW amplifiers have 15 dB less IMD than conventional buried-heterostructure semiconductor amplifiers. The IMD is dependent on the output power of the amplifiers, which confirms that the carrier-density modulation is the dominant nonlinear mechanism in MQW amplifiers. In addition, the results show that, unlike conventional buried-heterostructure amplifiers, MQW amplifiers have at least two time constants (200-250 ps and <10 ps) for the gain recovery process.<>     

A model for hot-electron-induced MOSFET linear-current degradationbased on mobility reduction due to interface-state generation

A simple model for the hot-electron degradation of MOSFET linear-current drive is developed on the basis of the reduction of the inversion-layer mobility due to the generation of interface states. The model can explain the observed dependence of the device hot-electron lifetime on the effective channel length and oxide thickness by taking into account both the relative nonscalability of the localized damage region and the dependence of the linear-current degradation on the effective vertical electric field E_eff. The model is verified for deep-submicrometer non-LDD n-channel MOSFETs with L_eff=0.2-1.5 μm and T_ox=3.6-21.0 nm. From the correlation between linear-current and charge-pumping degradation, the scattering coefficient α, which relates the number of generated interface states to the corresponding amount of inversion-layer mobility reduction, can be extracted and its dependence on E_eff determined. Using this linear-current degradation model, existing hot-electron lifetime prediction models are modified to account explicitly for the effects of L_eff and T _ox     

Luminescence decay and injected carrier lifetime in the high injection region of AlGaAs lasers

Luminescence decays following short current pulse excitation of an antireflection coated AlGaAs laser diode have been measured. Using an optical gating technique, decays in the high injection region (simgthreshold density of uncoated lasers) were measured with a 100 ps time resolution. The observed luminescence decay is shown to be strongly affected by net gain in the active region. It is also shown that both monomolecular and bimolecular carrier recombination must be considered. A model has been developed that takes these effects into account and is shown to accurately describe steady-state and decay spontaneous emission intensities from laser diodes. A procedure is outlined for determining the necessary device and material parameters for interpreting laser diode characteristics.     

Anisotropic properties of aromatic polyamides containing non-rigid rodlike units

Summary Three kinds of aromatic polyamides were synthesized by Higashi reaction: aromatic polyamides with even, odd number of methylenes and a meta phenylene as a joint in the main chain. Each polymer consisted of 7 p-phenylene-amide elements as a rigid segment. The polymer with even number of methylenes showed a lyotropic liquid crystalline behavior and a broader biphasic region than the fully para aromatic polyamide such as poly(p-phenylene terephthalamide). Most polymers with odd number of methylenes did not form a liquid crystalline phase and showed a crystallo-solvate. Exceptionally, the polymer with glutaryl unit was observed to have the swollen gel of colored pattern by the polarized microscope. The zigzag polymer, characterized by the highly kinetic rigidity, revealed an anisotropic gel phase in a solution.     

Asymptotic loss of real-time traffic in wireless mobile networks with selective-repeat ARQ

We study the issue of quality of service (QoS) for real-time traffic over a wireless channel deploying automatic repeat request (ARQ) error control. An analytical model has been derived to evaluate the queueing related loss and the wireless channel related loss. In contrast to previous work, this model quantifies the interaction between the network layer and the physical layer, and then it enables the admission controllers of wireless networks to improve utilization while satisfying the traffic QoS constraints through cross-layer design techniques.     

Surface acoustic wave characteristics of ZnO films grown on a polycrystalline 3C-SiC buffer layer

Zinc oxide (ZnO) thin films were deposited onto a polycrystalline (poly) 3C-SiC buffer layer for surface acoustic wave (SAW) applications using a magnetron sputtering system. Atomic force microscopy (AFM) and X-ray diffraction (XRD) showed that the ZnO grown on 3C-SiC/Si had a smooth surface, a dominant c-axis orientation and a lower residual stress in ZnO thin film compared to that grown directly onto Si substrate. In order to evaluate the SAW characteristics of ZnO films on a 3C-SiC buffer layer, the two-port SAW resonators, based on inter-digital transducer (IDT)/ZnO/3C-SiC/Si and IDT/ZnO/Si structures, were fabricated and measured within a temperature range of 25-135 °C. The resulting 3C-SiC buffer layer improved the insertion loss by approximately 7.3 dB within the SAW resonator and enhanced the temperature stability with TCF = −22 ppm/°C up to 135 °C in comparison to that of TCF = −45 ppm/°C within a temperature range of 25-115 °C of the ZnO/Si structure.