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21.
Chung S.S. Shui-Ming Cheng Lee R.G.-H. Song-Nian Kuo Mong-Song Liang 《Electron Devices, IEEE Transactions on》1997,44(12):2220-2226
This paper reports a simple I-V method for the first time to determine the lateral lightly-doped source/drain (S/D) profiles (n- region) of LDD n-MOSFETs. One interesting result is the direct observation of the reverse-short-channel effect (RSCE). It is observed that S/D n- doping profile is channel length dependent if reverse short-channel effect exists as a result of the interstitial imperfections caused by Oxide Enhanced Diffusion (OED) or S/D implant. Not only the lateral profiles for long-channel devices but also for short-channel devices can be determined. One other practical application of the present method for device drain engineering has been demonstrated with a LATID MOS device drain engineering work. It is convincible that the proposed method is well suited for the characterization and optimization of submicron and deep-submicron MOSFETs in the current ULSI technology 相似文献
22.
A two-dimensional finite element model was constructed to analyze the simulated mechanical behavior of a cantilevered fixed partial denture. The variations of the models were made by altering the degree of bone support, the number of splinted abutments, and the length of the pontics. High stress concentrations were observed around the connectors of the fixed prosthesis and the tooth closest to the cantilever. Reduced bone support increased the deflection and stress concentrations. There was reduction in displacement and stress concentration when the teeth were splinted together. To improve the prognosis of the fixed partial denture cantilever, the number of abutments should be increased and the number of pontics decreased. 相似文献
23.
岩心PI值试验研究及应用 总被引:5,自引:0,他引:5
主要论述了在多功能采油化学用剂评价仪上进行的岩心PI值试验的步骤,现象及结论。重点考察了岩心PI值与渗透率、流量及注入截面面积的关系;平行管岩心复合PI值和其中单管岩心PI值的关系。 相似文献
24.
The magnetic properties of polyethersulfone-matrix composites with 3-19 vol.% polycrystalline nickel filaments (0.4 (im diam)
were investigated. These filaments were found to exhibit hysteresis energy loss 10800 J/m3 of nickel and coercive force 16.9 kA/m, compared to corresponding values of 4930 J/m3 and 4.7 kA/m for 2 μ.m diam polycrystalline nickel fibers, 1020 J/m3 and 0.5 kA/m for 20 μm diam polycrystalline nickel fibers, and 1280 J/m3 and 2.3 kA/m for solid polycrystalline nickel. 相似文献
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26.
We have studied the CO2/CH4 mixed gas permeation through hollow fiber membranes in a permeator. An approach to characterize the true separation performance of hollow fiber membranes for binary gas mixtures was provided based on experiments and simulations. Experiments were carried out to measure the retentate and permeate flow rates and compositions at each outlet. The influences of pressure drop within the hollow fibers, non-ideal gas behavior in the mixture and concentration polarization were taken into consideration in the mathematics model. The calculation results indicate that the net influence of the non-ideal gas behavior, competitive sorption and plasticization yields the calculated CO2 permeance in a mixed gas permeator close to that obtained in pure gas tests. Whereas the CH4 permeance is higher in the mixed gas tests than that in the pure gas tests, as the plasticization caused by CO2 dominates the permeation process. As a result, the CO2/CH4 mixed gas selectivity is smaller than those obtained in pure gas tests at equivalent pressures.The calculated membrane performance shows little changes with stage cut if the effect of concentration polarization is accounted for in the calculation. The integration method developed in this study could provide more accurate characterizations of mixed gas permeance of hollow membranes than other estimation methods, as our model considers the roles of non-ideal gas behavior and concentration polarization properly. 相似文献
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28.
GaN buffer and main layers were grown by the conventional hydride vapor phase epitaxy technique using GaCl3 consecutively. The deposited buffer layers were investigated by atomic force microscopy and X-ray analysis. To examine the behavior of the buffer layers at main layer growth temperature, heat treatment was conducted at 900°C. Based on the results of the buffer layer study, GaN thick films were grown at 1050°C. Optimum deposition conditions of buffer layer from the buffer and main layer studies generally coincided. On the φ scanning pattern, the GaN films grown on (0001) Al2 O3 were single-crystalline. Band-edge emission dominated photoluminescence was observed at room temperature. 相似文献
29.
30.
Chengcai YaoB.T.F Chung G.-X Wang 《International Journal of Heat and Mass Transfer》2002,45(11):2397-2405
Equilibrium solidification in a semitransparent planar layer is studied using an isothermal mushy zone model. The layer is made up of a pure material being emitting, absorbing and isotropically scattering and is subject to radiative and convective cooling. The model involves solving simultaneously the transient energy equation and the radiation transport equation. An implicit finite volume scheme is employed to solve the energy equation, with the discrete ordinate method being used to deal with the radiation transport. A systematical parametric study is performed and the effects of various materials optical properties and processing conditions are investigated. It is found that decreasing the optical thickness and increasing the scattering albedo both lead to a wider mushy zone and a slower rate of solidification. 相似文献