分布式多元胞集成半导体放电管的设计与工艺

介绍了一种分布式多元胞集成半导体放电管的结构设计和工艺方法。在保持传统单元胞放电管器件表面总面积和放电管纵向剖面NPNPN五层结构不变的情况下,将放电管发射区等分成2(N+1)2个(N取0,1,2,3,4),构成在基区中心对称的多元胞结构。该结构优化了放电管阴极发射区的分布,使浪涌电流在整个芯片平面上趋于均匀,降低了发射区的热量集中效应;同时增加了电流放大系数,减少了放电管的开通时间。采用镓扩散、玻璃钝化等工艺流程,制作出分布式多元胞集成半导体放电管,解决了单元胞放电管散热不均匀、响应速度慢及可靠性差的问题。雷电波冲击电流测试表明,该结构提高了器件的抗电涌能力,可广泛应用于通信领域的雷电防护。     

一种高效的MIMO-OFDM预编码实现方法

现有的预编码码本设计方法均导致了在信道量化时计算复杂度过高的问题。本文研究了Kerdock码本,这种码本由多个相互无偏基矩阵组成,这些基矩阵都只含有4个已知元素且都是归一化矩阵,并基于Kerdock码本的这种特殊结构给出了一种高效的实现方法。本文将在信道量化部分详细讲解这种实现的具体结构。这种结构有利于降低搜索复杂度,从仿真和计算结果可以看出采用这种结构的码本和量化器,能以很小的性能损失换来计算复杂度降低一半的优越性。     

保密传真通信系统的仿真实现

实际的保密传真通信系统是一个功能结构复杂的系统。在建立新系统前,通常需要对系统进行建模和仿真以消除系统中潜在的瓶颈,提高系统成功的概率。文中在分析了保密传真通信系统的工作原理之后,对保密传真通信系统的信源编码模块、加解密模块和调制解调模块进行了Matlab仿真实现,仿真结果达到了预期目标。     

Growth of Strained Si1－xGex Layer by UV/UHV/CVD

Strained Si1－xGex and Si materials are successfully grown on Si substrate by ultraviolet light chemical vapor deposition under ultrahigh vacuum at a low substrate temperature of 450℃ and 480℃，respectively.At such low temperature,autodoping effects from the substrate and interdiffusion effects at each interface could be suppressed efficiently.The strained Si1－xGex and multilayer Si1－xGex /Si structures are examined by X-ray diffraction,SMIS,etc.,and it is found that the materials have good crystallinity and the rising and falling edges are steep.The technique has a capability of growing highquality Si1－xGex /Si strained layers.     

可信计算应用的进程--可信计算平台应用、发布研讨会在京召开

今年以来,可信计算技术以及基于该技术的“安全芯片”,“安全PC”继续升温,一些厂家也纷纷宣布推出或正酝酿推出可信计算产品。9月27日“可信计算平台应用、发布研讨会”在京召开,来自国内的专家、厂商、用户等约200多名代表参加了会议。国信办领导,沈昌祥院士、屈延文教授等信息安全专家到会并发表讲话。此次大会由中国信息产业商会信息安全产业分会、中国信息协会信息安全专业委员会联合主办,由武汉瑞达信息安全产业股份有限公司(以下简称瑞达公司)承办。     

A Water Stable,Near‐Zero‐Strain O3‐Layered Titanium‐Based Anode for Long Cycle Sodium‐Ion Battery

Layered transition metal (TM) oxides of the stoichiometry Na_xMO₂ (M = TM) have shown great promise in sodium‐ion batteries (SIBs); however, they are extremely sensitive to moisture. To date, most reported titanium‐based layered anodes exhibit a P2‐type structure. In contrast, O3‐type compounds are rarely investigated and their synthesis is challenging due to their higher percentage of unstable Ti³⁺ than the P2 type. Here, a pure phase and highly crystalline O3‐type Na_0.73Li_0.36Ti_0.73O₂ with high performance is successfully proposed in SIBs. This material delivers a reversible capacity of 108 mAh g^?1 with a stable and safe potential of 0.75 V versus Na/Na⁺. In situ X‐ray diffraction reveals that this material does not undergo any phase transitions and exhibits a near‐zero volume change upon Na⁺ insertion/de‐insertion, which ensures exceptional long cycle life over 6000 cycles. Importantly, it is found that this O3‐Na_0.73Li_0.36Ti_0.73O₂ shows superior moisture stability, even when immersed into water, which are both elusive for conventional layered TM oxides in SIBs. It is believed that the small interlayer distance and high occupation of interlayer vacancy promise such unprecedented water stability.     

电化学电容器充放电循环的微机测试系统

为了更好地评价电化学电容器的充放电循环寿命性能,采用恒定负载法进行充放电试验。测试系统硬件由微机和数据采集卡以及取样控制电路组成,应用软件的开发工具采用VB6.0,在Windows 2000操作系统下运行。系统除了能自动完成电容器充放电循环寿命试验外,还具有实时显示电容器充放电电流变化曲线,并将每个充放电循环周期的电流数据以文件的形式自动保存下来等功能。     

毫米波MIMO发射机中的低复杂度动态子阵列组合方法

对于采用部分连接架构的毫米波MIMO系统,为了提升频谱效率,根据信道条件动态调整各子阵列的天线组成。然而,对天线进行最佳分组需要按照一定准则对所有可能的天线组合进行穷举搜索,将导致复杂度难以接受。针对这一问题,提出了一种低复杂度的子阵列动态分配方法,核心是在对阵元进行分组时,引入一定的规则,从而显著降低组合个数,减少搜索范围。具体而言,给出了两种低复杂度的天线组合算法。首先,考虑到毫米波天线间具有较强的相关性,将相邻多个天线虚拟为一个阵元,从而降低搜索空间。其次,通过将所有天线分为上下半区,实现基于分区的天线组合,实现了搜索空间的降低。仿真结果表明,所提的方法能够在性能和复杂度之间获得较好的折中。     

一种2.4GHz 0.35μm CMOS Gilbert下变频器

利用0.35μm CMOS工艺实现了一种用于低中频接收机的Gilbert型下变频器.其中,混频器的输出级采用折叠级联输出,射频信号、本振信号和中频信号的频率分别为2.452GHz,2.45GHz和2MHz.测试表明:在3.3V电源电压条件下,整个混频器电路消耗的电流约为4mA,转换增益超过6dB,输入1dB压缩点约为-11dBm.     

Point Defects in Pb-, Bi-, and In-Doped CdZnTe Detectors: Deep-Level Transient Spectroscopy (DLTS) Measurements

We studied, by current deep-level transient spectroscopy (I-DLTS), point defects induced in CdZnTe detectors by three dopants: Pb, Bi, and In. Pb-doped CdZnTe detectors have a new acceptor trap at around 0.48?eV. The absence of a V_Cd trap suggests that all Cd vacancies are compensated by Pb interstitials after they form a deep-acceptor complex [[Pb_Cd]⁺-V _Cd ^2? ]^?. Bi-doped CdZnTe detectors had two distinct traps: a shallow trap at around 36?meV and a deep donor trap at around 0.82?eV. In detectors doped with In, we noted three well-known traps: two acceptor levels at around 0.18?eV (A-centers) and 0.31?eV (V_Cd), and a deep trap at around 1.1?eV.