Development of a simple microsystems membrane probe card

Presented here are details of the development of a novel membrane integrated circuit (IC) probe card structure based on microsystems technology. The device design allows probing of both solder bumps and pads. A self-limiting sensor was integrated to prolong device lifetime. Comparison with and discussion of the use of modelling is made. Possible enhancements to the probing structure are discussed to improve alignment and measurements. Also shown is data using our microsystems probe card to access a simple IC device. Our device has a contact resistance of less than 0.5 Ω for a force of 0.004 N. A method to implement our probing structure for commercial application and the potential developments which can be made to improve its ease of use are then discussed.     

Vacuum degassing of chromium-nickel-molybdenum steel at the Magnitogorsk Metallurgical Combine

The Magnitogorsk Metallurgical Combine has conducted a study of the effect of technological factors on the hydrogen content of chromium-nickel-molybdenum steel after vacuum degassing. It was established that the most important factor is the hydrogen content of the steel before the degassing operation. The study also determined the effects of the circulation coefficient, the duration of the degassing operation, and the vacuum used in the treatment. __________ Translated from Metallurg, No. 7, pp. 68–69, July, 2006.     

Improved homogenization of Ni in sintered steels through the use of Cr-containing prealloyed powders

The homogenization of Ni in powder metal (PM) steel compacts is usually difficult even after high-temperature sintering at 1250°C. An earlier study by the authors demonstrated that this problem can be alleviated through the addition of 0.5 wt pct Cr in the form of stainless steel powders. To further improve the microstructure and mechanical properties of Ni-containing PM steels and to understand the mechanisms, an attempt was made in this study using the Fe-3Cr-0.5Mo prealloyed powder as the base material. The results showed that the distribution of the Ni additives was significantly improved. As a result, the tensile strength of the Fe-3Cr-0.5Mo-4Ni-0.5C compact sintered at 1250°C reached 1323 MPa. The elongation was higher than 1 pct. These sinter-hardened properties, which were attained using a slow furnace cooling rate, were comparable to those of the sinter-hardened alloys reported in the literature using accelerated cooling and were equivalent to those of the best quenched-and-tempered alloys registered in the Metal Powder Industries Federation (MPIF) standards. These improvements were attributed to the positive effect of Cr addition on alloy homogenization due to the reduction of the repelling effect between Ni and C, as was demonstrated through the thermodynamic analysis using the Thermo-Calc program.     

Understanding silica-supported metal catalysts: Pd/silica as a case study

Supported metal catalysts, particularly noble metals supported on SiO₂, have attracted considerable attention due to the importance of the silica–metal interface in heterogeneous catalysis and in electronic device fabrication. Several important issues, e.g., the stability of the metal–oxide interface at working temperatures and pressures, are not well-understood. In this review, the present status of our understanding of the metal–silica interface is reviewed. Recent results of model studies in our laboratories on Pd/SiO₂/Mo(1 1 2) using LEED, AES and STM are reported. In this work, epitaxial, ultrathin, well-ordered SiO₂ films were grown on a Mo(1 1 2) substrate to circumvent complications that frequently arise from the silica–silicon interface present in silica thin films grown on silicon.     

Performance study of iSCSI-based storage subsystems

iISCSI is emerging as an end-to-end protocol for transporting storage I/O block data over IP networks. By exploiting the ubiquitous Internet infrastructure, iSCSI greatly facilitates remote storage, remote backup, and data mirroring. This article evaluates the performance of two typical iSCSI storage subsystems by measuring and analyzing block-level I/O access performance and file-level access performance. In the file-level performance study, we compare file access performance in an NAS scheme with that in an iSCSI-based SAN scheme. Our test results show that Gigabit Ethernet-based iSCSI can reach very high bandwidth, close to that of a direct FC disk access in block I/O access. However, when the iSCSI traverses through longer distance, throughput relies heavily on the available bandwidth between the initiator and the target. On the other hand, the file-level performance shows that iSCSI-based file access (SAN scheme) provides higher performance than using NFS protocol in Linux and SMB protocol in Windows (NAS scheme). However, the advantage of using iSCSI-based file accesses decreases as the file size increases. The obtained experimental results shed some light on the performance of applications based on iSCSI storage.     

Inhibition of microbial growth in ready‐to‐eat food stored at ambient temperature by modified atmosphere packaging

This study was undertaken to develop a modified atmosphere package to control microbial growth in ready‐to‐eat (RTE) products stored at ambient temperature. Ethanol and/or limonene associated with modified atmosphere (CO₂ : O₂ : N₂ = 30% : 5% : 65%) was used to inhibit the growth of total air‐borne microorganisms and Escherichia coli in RTE products stored at 25°C. The results indicated that 0.05% ethanol vapour in the headspace was effective to inhibit the growth of air‐borne microorganisms and E. coli at 25°C for 72 h in a model study, and the effectiveness was related to ethanol content. Both 73 ppm limonene and 0.05% ethanol vapour enhanced the bacteriostatic effect of modified atmosphere in RTE sushi roll products, and no off‐flavour was detected using this formulated gas; however, no significant inhibitory effect was observed for RTE cold noodle products. This study concludes that combinations of carbon dioxide, ethanol or limonene vapours are effective to inhibit microbial growth in RTE food at ambient temperature, and the outcome may be due to the hurdle effect. Copyright © 2003 John Wiley & Sons, Ltd.     

Structure and electrical characteristics of Ce4+-doped Ba2In2O5

The In-site of Ba₂In₂O₅ with Brownmillerite structure was partially substituted for Ce⁴⁺ ions in order to examine the doping effect on the order-disorder transition. Ba₂In_{2 – x} Ce _x O_{5 + x/2} (x = 0.1, 0.2, 0.3, 0.5, 1.0, and 1.5) were prepared by solid state reaction. X-Ray diffraction analyses of these powder samples demonstrated that Ba₂In_{2 – x} Ce _x O_{5 + x/2} (x = 0.1 and 0.2) possesses Brownmillerite structure. With increasing content of Ce⁴⁺ ion the crystal system of Ba₂In_{2 – x} Ce _x O_{5 + x/2} (x = 0.3, 0.5, and 1.0) changed to cubic perovskite structure above the order-disorder transition temperature of Ba₂In₂O₅. Arrhenius plots of the electrical conductivities of Ba₂In_{2 – x} Ce _x O_{5 + x/2} (x = 0.2, 0.3, and 1.0) exhibited no discontinuity. These compounds had high transference numbers of oxide ion above 973 k.     

Java multimedia telecollaboration

Using Java-based tools in multimedia collaborative environments accessed over the Internet can increase an application's client base. Most operating systems support Java, and its "compile once-run everywhere" architecture is easy to maintain and update. The Java-based tools presented here let users share Internet resources, including resources originally designed for single use.     

Metalorganic chemical vapor deposition of silver thin films for future interconnects by direct liquid injection system

Deposition of Ag films by direct liquid injection-metal organic chemical vapor deposition (DLI-MOCVD) was chosen because this preparation method allows precise control of precursor flow and prevents early decomposition of the precursor as compared to the bubbler-delivery. Silver(I)-2,2-dimethyl-6,6,7,7,8,8,8-heptafluoro-3,5-octanedionato-triethylphosphine [Ag(fod)(PEt₃)] as the precursor for Ag CVD was studied, which is liquid at 30 °C. Ag films were grown on different substrates of SiO₂/Si and TiN/Si. Argon and nitrogen/hydrogen carrier gas was used in a cold wall reactor at a pressure of 50–500 Pa with deposition temperature ranging between 220 °C and 350 °C. Ag films deposited on a TiN/Si diffusion barrier layer have favorable properties over films deposited on SiO₂/Si substrate. At lower temperature (220 °C), film growth is essentially reaction-limited on SiO₂ substrate. Significant dependence of the surface morphology on the deposition conditions exists in our experiments. According to XPS analysis pure Ag films are deposited by DLI-MOCVD at 250 °C by using argon as carrier gas.