Training and optimization of an artificial neural network controlling a hybrid power filter

A hybrid power compensator (HPC) consisting of a static VAr compensator and a dynamic compensator needs to be optimally controlled during the compensation of nonlinear loads. The HPC must be controlled to meet minimum requirements in terms of power factor and harmonic distortion, while at the same time minimizing its total cost. An artificial neural network (ANN) is used to control the HPC amidst a very dynamic power system environment. The performance of a reference ANN is evaluated while controlling an HPC connected to a typical nonlinear industrial load. The training and performance of the ANN is then optimized in terms of training set size, training set packing and ANN topology and the performance compared to the reference ANN. This paper highlights the importance of optimising the mentioned ANN parameters to achieve optimum ANN training and modeling accuracy. The results obtained reveals that the application of an ANN in controlling an HPC is feasible given that the ANN parameters are chosen appropriately.     

Synthesis of ZSM‐5 Films and Monoliths with Bimodal Micro/Mesoscopic Structures

A route to synthesize ZSM‐5 crystals with a bimodal micro/mesoscopic pore system has been developed in this study; the successful incorporation of the mesopores within the ZSM‐5 structure was performed using tetrapropylammonium hydroxide (TPAOH)‐impregnated mesoporous materials containing carbon nanotubes in the pores, which were encapsulated in the ZSM‐5 crystals during a solid rearrangement process within the framework. Such mesoporous ZSM‐5 zeolites can be readily obtained as powders, thin films, or monoliths.     

The First Template‐Free Growth of Crystalline Silicon Microtubes

A simple template‐free high‐temperature evaporation method was developed for the growth of crystalline Si microtubes for the first time. As‐grown Si microtubes were characterized using X‐ray diffraction, scanning electron microscopy, transmission electron microscopy, and room‐temperature photoluminescence. The lengths of the Si tubes can reach several hundreds of micrometers; some of them have lengths on the order of millimeters. Each tube has a uniform outer diameter along its entire length, and the typical outer diameter is ≈ 2–3 μm. Most of the tubes have a wall thickness of ≈ 400–500 nm, though a considerable number of them exhibit a very thin wall thickness of ≈ 50 nm. Room‐temperature photoluminescence measurement shows the as‐synthesized Si microtubes have two strong emission peaks centered at ≈ 589 nm and ≈ 617 nm and a weak emission peak centered at ≈ 455 nm. A possible mechanism for the formation of these Si tubes is proposed. We believe that the present discovery of the crystalline Si microtubes will promote further experimental studies on their physical properties and smart applications.     

Effect of the Distribution of Manganese Ions on the Properties of Mn-Doped (Ba,Y)TiO3 PTCR Ceramics

The electrical properties and microstructure of (Ba,Y)TiO₃ PTCR ceramics were studied. The results indicate that the Mn ions increase the intergranular barrier height and produce a high-resistance layer on the grain surface. The temperature-dependent resistances of the grain bulk, surface layer, and grain boundaries, the temperature coefficient of resistance, and the magnitude of the varistor effect were assessed as a function of Mn content.     

An original approximate method for estimating the invariant probability distribution of a large class of multi-dimensional nonlinear stochastic oscillators

This paper proposes an original method for obtaining analytical approximations of the invariant probability density function of multi-dimensional Hamiltonian dissipative dynamic systems under Gaussian white noise excitations, with linear non-conservative parts and nonlinear conservative parts. The method is based on an exact result and a heuristic argument. Its pertinence is attested by numerical tests.     

On trading wavelengths with fibers: a cost-performance based study

We consider the effect of multiple fibers on wavelength division multiplexing networks without wavelength conversion. We study networks with dynamic wavelength routing and develop accurate analytical models to compare various possible options using single- and multiple-fiber networks. We use results of an analytical model and simulation-based studies to evaluate the blocking performance and cost of multifiber networks. The number of fibers required providing high performance in multifiber networks and their costs are compared. A case is made for using multiple fibers in each link with fewer wavelengths instead of using a single fiber with many wavelengths. In particular, we show that a network with four fibers per link and with four wavelengths on each fiber without any wavelength conversion on any node yields similar same performance as the networks with one fiber per link and 16 wavelengths per fiber on each link and with full wavelength conversion capability on all nodes. In addition, the multifiber network may also offer the cost advantage depending on the relative cost of components. We develop a parametric cost model to show that multiple fibers in each link are an attractive option. Finally, such multifiber networks also has fault tolerance, with respect to a single fiber failure, already built into the system.     

QR factoring to compute the GCD of univariate approximate polynomials

We present a stable and practical algorithm that uses QR factors of the Sylvester matrix to compute the greatest common divisor (GCD) of univariate approximate polynomials over /spl Ropf/[x] or /spl Copf/[x]. An approximate polynomial is a polynomial with coefficients that are not known with certainty. The algorithm of this paper improves over previously published algorithms by handling the case when common roots are near to or outside the unit circle, by splitting and reversal if necessary. The algorithm has been tested on thousands of examples, including pairs of polynomials of up to degree 1000, and is now distributed as the program QRGCD in the SNAP package of Maple 9.     

Nonstationary Simulation Model of Absorber with Falling Film of Suspension

A nonstationary model of SO₂ absorption from a gas phase to a countercurrent falling film of absorbing slurry was developed. Laminar, wavy and turbulent film structures were considered based on published information. Resistances to the mass transfer on the gas and the liquid sides of the interphase were considered, together with chemical reactions in the liquid phase. Relevant chemical equilibria in the liquid phase were modeled. Original experimental data on the neutralization reagent dissolution rate presented as a polydispersed two‐phase system of solids and on the rate of dissolved sulfite oxidation were used. The model was verified with experimental data from a laboratory‐scale falling‐film absorber using a single vertical tube under various geometrical and operating conditions, and a very good agreement was found with the experiment. Parametric sensitivity analysis showed the critical parts of the model.     

Characteristic Features of the Optimal Processing of the Results of Measurements in the Case of a Random Observation Function

An analysis is made of the characteristic features and problems of the optimal processing of the results of measurements in the case of a random observation function utilizing a nonlinear Kalman filter. A method is proposed for increasing the convergence domain of the filter with additional processing of measurements in the frequency domain.     

Influence of device engineering on the analog and RF performances of SOI MOSFETs

This work presents a systematic comparative study of the influence of various process options on the analog and RF properties of fully depleted (FD) silicon-on-insulator (SOI), partially depleted (PD) SOI, and bulk MOSFET's with gate lengths down to 0.08 /spl mu/m. We introduce the transconductance-over-drain current ratio and Early voltage as key figures of merits for the analog MOS performance and the gain and the transition and maximum frequencies for RF performances and link them to device engineering. Specifically, we investigate the effects of HALO implantation in FD, PD, and bulk devices, of film thickness in FD, of substrate doping in SOI, and of nonstandard channel engineering (i.e., asymmetric Graded-channel MOSFETs and gate-body contacted DTMOS).