Investigation of the power dissipation during IGBT turn-off using a new physics-based IGBT compact model

New compact models of the IGBTs (both non-punch through IGBT (NPTIGBT) and punch-through IGBT (PTIGBT)) are presented in this paper. The models are implemented in the SABER circuit simulator and used for a study of IGBT anode current and voltage characteristics during a device turn-off (clamped inductive load circuit with gate controlled turn-off), since these parts of the transient characteristics essentially predict the power dissipation (V×I) inside the device. It is shown that PTIGBTs are faster than NPTIGBTs, this becoming more apparent at higher clamp voltages.     

阻止抬升盆地原油生物降解的深埋灭菌作用

微生物活动造成的原油生物降解作用发生地球中大多数的油藏中，人们认为生物降解作用大大降低油藏中原油的质量，为成功寻找工业油藏，理解地质建造中生物降解作用发生的条件与过程是十分重要的，尽管最近的研究推测微生物活动在温度在150℃仍能有效地发生，但是人们普遍认为在地质时代，有效的石油生物降解作用通常发生在温度低于80℃的储层中，然而奇怪的是在温度低于80℃的储层中，还可发现未降解的原油，本文收集了一些油藏中有关生物降解程度的数据，发现未降角原油局限于埋藏浅的冷盆地，这些盆地曾是地球中更深，更热的部位，后经抬升作用形成的，我们认为这石油储层在深埋过程中，在温度为80－90℃时经历了灭菌作用，使得深部生物圈中降解烃类的生物停止活动，尽管这些储层后期抬升到较冷的部位并再次发生石油充注，也不会发生生物降解作用，表明灭菌后的沉积物不再适合降解烃类的细菌生长。     

Determination of dislocation densities in HCP metals from X-ray diffraction line-broadening analysis

X-Ray diffraction (XRD) line-broadening analysis has been performed on highly textured Zr-2.5Nb specimens which had been deformed in tensile tests to produce well-controlled dislocation structures. An iterative deconvolution method has been applied to extract the broadening function for the material, using as standards, a Zr single crystal and a 0 pct deformed specimen. In both cases, for specific tensile tests, a significant contribution to the basal line braodening was observed, which was clearly not directly related to the dislocation structure generated by the deformation, i.e., so-called c-component dislocations having a component of their Burgers vectors perpendicular to the basal plane. Calculations showed that the extent of basal line broadening cannot be attributed to the secondary effect of strain from a-type dislocations, i.e., dislocations with Burgers vectors parallel with the basal plane. It is concluded that most of the line broadening observed was the result of intergranular strain distributions. These distributions are most prominent for grains oriented with their c-axes perpendicular to the tensile-deformation axis and resulted in basal-plane line broadening even when there were few, if any, c-component dislocations present. This article is based on a presentation made in the symposium entitled “Defect Properties and Mechanical Behavior of HCP Metals and Alloys” at the TMS Annual Meeting, February 11–15, 2001, in New Orleans, Louisiana, under the auspices of the following ASM committees: Materials Science and Critical Technology Sector, Structural Materials Division, Electronic, Magnetic & Photonic Materials Division, Chemistry & Physics of Materials Committee, Joint Nuclear Materials Committee, and Titanium Committee.     

International statements and definitions of the precautionary principle

The precautionary principle (PP), according to one of its definitions, says that lack of certainty, given the current scientific and technological knowledge, shall not delay effective and proportionate actions to prevent hazards, taking into account cost-benefit considerations. Rather than being a single principle, a variety of statements of the PP are found in international treaties and other documents. Apart from any specific legal force of the documents, countries (e.g., France) have used these statements as a starting point for their own guidance documents and regulations for addressing specific environmental and health issues, for example regulation of genetically modified organisms. Thus, any discussion of the precautionary principle must address a complex legal and regulatory situation. We briefly review different statements of the PP and important commentary, largely from the European Union. We provide references to the original source documents (many of which are found in English on the World Wide Web).     

An application-specific protocol architecture for wireless microsensor networks

Networking together hundreds or thousands of cheap microsensor nodes allows users to accurately monitor a remote environment by intelligently combining the data from the individual nodes. These networks require robust wireless communication protocols that are energy efficient and provide low latency. We develop and analyze low-energy adaptive clustering hierarchy (LEACH), a protocol architecture for microsensor networks that combines the ideas of energy-efficient cluster-based routing and media access together with application-specific data aggregation to achieve good performance in terms of system lifetime, latency, and application-perceived quality. LEACH includes a new, distributed cluster formation technique that enables self-organization of large numbers of nodes, algorithms for adapting clusters and rotating cluster head positions to evenly distribute the energy load among all the nodes, and techniques to enable distributed signal processing to save communication resources. Our results show that LEACH can improve system lifetime by an order of magnitude compared with general-purpose multihop approaches.     

Organic Materials and Thin‐Film Structures for Cross‐Point Memory Cells Based on Trapping in Metallic Nanoparticles

Non‐volatile solid‐state memory cells based on composites of metal nanoparticles and polymers are embedded in organic semiconducting host materials. This paper presents data from a wide range of materials and device structures and shows that the switching phenomenon is commonly observed.     

Intelligent Monitoring for Adaptation in Grid Applications

Grid applications access distributed, and often shared, resources. One consequence of this resource sharing is that measured application performance can vary widely and in unexpected ways. Determining the causes of poor performance, due to either anomalous application behavior or contention for shared resource use, and adapting to changing circumstances are critical to creation of robust Grid applications. Performance contracts and real-time adaptive control are two mechanisms to realize soft performance guarantees in Grid environments. Performance contracts formalize the relationship between application performance needs and resource capabilities. During execution, contract monitors use performance data to verify that expectations are met. When the contracted specifications are not satisfied, the system can choose to either adapt the application to available resources or reschedule the application on a new set of resources that can satisfy the original contract specifications. We describe an infrastructure for Grid application contract development and monitoring. This infrastructure, based on the Autopilot toolkit, provides flexible and scalable tools to assess both application and system behavior.     

Low-Temperature Materials and Thin Film Transistors for Flexible Electronics

This paper addresses the low-temperature deposition processes and electronic properties of silicon based thin film semiconductors and dielectrics to enable the fabrication of mechanically flexible electronic devices on plastic substrates. Device quality amorphous hydrogenated silicon (a-Si:H), nanocrystalline silicon (nc-Si), and amorphous silicon nitride (a-SiN/sub x/) films and thin film transistors (TFTs) were made using existing industrial plasma deposition equipment at the process temperatures as low as 75/spl deg/C and 120/spl deg/C. The a-Si:H TFTs fabricated at 120/spl deg/C demonstrate performance similar to their high-temperature counterparts, including the field effect mobility (/spl mu//sub FE/) of 0.8 cm/sup 2/V/sup -1/s/sup -1/, the threshold voltage (V/sub T/) of 4.5 V, and the subthreshold slope of 0.5 V/dec, and can be used in active matrix (AM) displays including organic light emitting diode (OLED) displays. The a-Si:H TFTs fabricated at 75/spl deg/C exhibit /spl mu//sub FE/ of 0.6 cm/sup 2/V/sup -1/s/sup -1/, and V/sub T/ of 4 V. It is shown that further improvement in TFT performance can be achieved by using n/sup +/ nc-Si contact layers and plasma treatments of the interface between the gate dielectric and the channel layer. The results demonstrate that with appropriate process optimization, the large area thin film Si technology suits well the fabrication of electronic devices on low-cost plastic substrates.