Interaction control between endohedral metallofullerene and metal substrate by introducing alkanethiol self-assembled monolayer

The interaction control between endohedral metallofullerenes and a metal substrate has been demonstrated by introducing hexanethiol, octanethiol, and decanethiol self-assembled monolayers (SAMs) as the interlayer. We observe the electric properties of terbium endohedral metallofullerenes (Tb@C82) on alkanethiol SAMs with different chain lengths by scanning tunneling microscopy (STM) and spectroscopy (STS). Based on the comparison of the high-resolution STM images of a Tb@C82 molecule on hexanethiol and octanethiol SAMs, the interaction between Tb@C82 and a hexanethiol SAM is found to be larger than that between Tb@C82 and an octanethiol SAM; this is because at 68 K, the rotational states of Tb@C82 terminate only on the hexanethiol SAM. Furthermore, we find that the tunneling current-voltage characteristics of Tb@C82 on the hexanethiol SAM show the rectifying effects that are also caused by the molecular energy level shifts of Tb@C82 molecules due to the large interaction.     

Comparisons of immersion and electrochemical properties of highly biocompatible Ti–15Zr–4Nb–4Ta alloy and other implantable metals for orthopedic implants

Metal release from implantable metals and the properties of oxide films formed on alloy surfaces were analyzed, focusing on the highly biocompatible Ti–15Zr–4Nb–4Ta alloy. The thickness and electrical resistance (R_p) of the oxide film on such an alloy were compared with those of other implantable metals. The quantity of metal released during a 1-week immersion test was considerably smaller for the Ti–15Zr–4Nb–4Ta than the Ti–6Al–4V alloy. The potential (E₁₀) indicating a current density of 10 μA cm⁻² estimated from the anodic polarization curve was significantly higher for the Ti–15Zr–4Nb–4Ta than the Ti–6Al–4V alloy and other metals. Moreover, the oxide film (4–7 nm thickness) formed on the Ti–15Zr–4Nb–4Ta surface is electrochemically robust. The oxide film mainly consisted of TiO₂ with small amounts of ZrO₂, Nb₂O₅ and Ta₂O₅ that made the film electrochemically stable. The R_p of Ti–15Zr–4Nb–4Ta was higher than that of Ti–6Al–4V, i.e. 0.9 Ω cm² in 0.9% NaCl and 1.3 Ω cm² in Eagle''s medium. This R_p was approximately five-fold higher than that of stainless steel, which has a history of more than 40 years of clinical use in the human body. Ti–15Zr–4Nb–4Ta is a potential implant material for long-term clinical use. Moreover, E₁₀ and R_p were found to be useful parameters for assessing biological safety.     

A role of hydrocarbon reaction for NOx formation and reduction in fuel-rich pulverized coal combustion

We have investigated an index for modeling a NO_x reaction mechanism of pulverized coal combustion. The reaction mechanism of coal nitrogen was examined by drop-tube furnace experiments under various burning conditions. We proposed the gas phase stoichiometric ratio (SRgas) as a key index to evaluate NO_x concentration in fuel-rich flames. The SRgas was defined as:

     

Microstructural changes in weld metal during isothermal process. Study of reheat cracking in flux‐cored arc welding stainless steel weld metal (5th report)

The soiling of the slag, spatter and the fume, etc., which come into contact with the steel sheet surface with welding, is cleaned making use of steel sphere shot material of large particle diameter, high projection pressure with strong peening processing (below, called strong peening cleaning). In this research, the cleaning state of the soiling with welding and improvement of fatigue strength of the hot galvanized welded joint was inspected, when the surface of a SM490A welded joint was cleaned with strong peening cleaning.

The following experimental results were obtained:

1. The fatigue limit of smooth base metal which received strong peening cleaning at about 320 MPa was remarkably high in comparison with smooth base metal at about 245 MPa.

2. The fatigue limit of a welded joint which received strong peening cleaning at about 300 MPa was remarkably high in comparison with a welded joint at about 170 MPa.

3. The strong peening cleaning was highly efficient and the cleaning state was satisfactory.

4. The cause of the remarkable rise of the fatigue limit (300 MPa) of the welded joint which received strong peening cleaning was because the fatigue limit (about 170 MPa, 57%) of the welded joint was improved (about 130 MPa, 43%) with peening cleaning. It was considered that improvement effects were: a rise (about 68 MPa, 23%) of hardness of the weld toe; relief (about 43 MPa, 14%) of stress concentration; increase (about 136 MPa, 45%) of compressive residual stress; and the decrease (about ? 96 MPa, ? 32%) by increase of surface roughness.

5. The fatigue strength of the hot galvanized welded joint decreased remarkably. This was thought to be due to the decrease (about HV40) of hardness of the surface, the decrease (about 188 MPa) of the compressive residual stress and the influence of many factors which accompanied hot galvanizing.

     

Concentric X-braced frames with HSS bracing

Concentrically braced frames are stiff, strong systems frequently used to resist wind and seismic loading; in regions of high seismicity in the US special concentrically braced frames (SCBFs) are used. CBF configurations vary, but in low rise or other structures with modest levels of demands single-story, X-configured braced frames (X-braced) are commonly used. The brace sections used also vary but hollow structural sections (HSS) are the most common in the U.S. Although important, in part because low-rise structures sustain large demands, few research programs have focused on the single-story X-brace configuration. A large research program was undertaken to understand and improve the response of SCBFs with selected testing on single-story X braced SCBFs. The test matrix consisted of two, full-scale planar X-braced frame experiments and one nearly-full-scale three-dimensional X-braced frame. The tests were designed using a new design and detailing philosophy, called the Balanced Design Method. In this paper, application of this design method to the frame is investigated, with a focus on the center-splice connection. The results show that the ultimate inelastic deformation capacity of the system is less dependent on the specific design detail at this splice. Additionally, the bi-directional load testing indicated that the out-of-plane demands did not impact the system performance.     

Fabrication of vertically aligned diamond whiskers from highly boron-doped diamond by oxygen plasma etching

Conductive diamond whiskers were fabricated by maskless oxygen plasma etching on highly boron-doped diamond substrates. The effects of the etching conditions and the boron concentration in diamond on the whisker morphology and overall substrate coverage were investigated. High boron-doping levels (greater than 8.4 × 10(20) cm(-3)) are crucial for the formation of the nanosized, densely packed whiskers with diameter of ca. 20 nm, length of ca. 200 nm, and density of ca. 3.8 × 10(10) cm(-2) under optimal oxygen plasma etching conditions (10 min at a chamber pressure of 20 Pa). Confocal Raman mapping and scanning electron microscopy illustrate that the boron distribution in the diamond surface region is consistent with the distribution of whisker sites. The boron dopant atoms in the diamond appear to lead to the initial fine column formation. This simple method could provide a facile, cost-effective means for the preparation of conductive nanostructured diamond materials for electrochemical applications as well as electron emission devices.     

New Frontiers in Materials Science Opened by Ionic Liquids

Ionic liquids (ILs) including ambient‐temperature molten salts, which exist in the liquid state even at room temperature, have a long research history. However, their applications were once limited because ILs were considered as highly moisture‐sensitive solvents that should be handled in a glove box. After the first synthesis of moisture‐stable ILs in 1992, their unique physicochemical properties became known in all scientific fields. ILs are composed solely of ions and exhibit several specific liquid‐like properties, e.g., some ILs enable dissolution of insoluble bio‐related materials and the use as tailor‐made lubricants in industrial applications under extreme physicochemical conditions. Hybridization of ILs and other materials provides quasi‐solid materials, which can be used to fabricate highly functional devices. ILs are also used as reaction media for electrochemical and chemical synthesis of nanomaterials. In addition, the negligible vapor pressure of ILs allows the fabrication of electrochemical devices that are operated under ambient conditions, and many liquid‐vacuum technologies, such as X‐ray photoelectron spectroscopy (XPS) analysis of liquids, electron microscopy of liquids, and sputtering and physical vapor deposition onto liquids. In this article, we review recent studies on ILs that are employed as functional advanced materials, advanced mediums for materials production, and components for preparing highly functional materials.     

Metal release from stainless steel, Co–Cr–Mo–Ni–Fe and Ni–Ti alloys in vascular implants

A seven-day immersion test using several solutions was conducted on stainless steel, Co-based alloy, and Ni–Ti alloy, which are used for stents and stent grafts. The quantitative data on the release of each metal ion and the correlation between metal ion release rate and pH were obtained. The quantities of Fe and Ni released from stainless steel gradually decreased with increasing solution pH (pH 2–7.5). For Co–Cr–Mo–Ni–Fe alloy, the quantity of Cr released steadily increased as pH decreased (pH ≤ 6) and reached nearly zero at pHs higher than 6 (pH 6–7.5). Co release was slightly affected by a variation in pH. The quantities of Ni and Ti released from Ni–Ti alloy markedly increased with decreasing pH (pH ≤ 4) and they leveled off from pH 4 (pH 4–7.5). Although the rapid increases were observed at approximately pH 2, the quantities were even higher than that of Co released from the Co–Cr–Mo and Co–Cr–Mo–Ni–Fe alloys. For further investigation of the rapid increase in the quantities of metals released at pH 2, an anodic polarization test was employed to study the passive and transpassive behaviours of Ni–Ti alloy. The critical current density for the passivation of Ni–Ti alloy markedly increased as pH decreased (pH ≤ 4) and was low (1.4 μA/cm²) at pH higher than 4 (pH 4–7.5). The potential at a current density of 10 μA/cm², by contrast, markedly rose with decreasing pH (pH ≤ 2), and was 1.2 V from pH 2 (pH 2–7.5).     

A simple screening procedure for heterotrophic nitrifying bacteria with oxygen-tolerant denitrification activity

Various naturally occurring strains of heterotrophic nitrifying bacteria were isolated by enrichment culture using acetamide as the C and N source, and 21 strains were identified as heterotrophic nitrifiers. Using a new simple procedure, these 21 strains were also investigated for the ability to carry out denitrifcation in the presence of oxygen. Several of the nitrifying strains were found to exhibit a distinct activity that allows for denitrifcation via nitrite (NO2-) in the presence of oxygen, indicating that they have an oxygen-tolerant denitrifcation system. A wide variety of bacteria possessing both nitrification and denitrifcation capabilities in the presence of oxygen were isolated and partially characterized by using the simple screening combinatorial procedure described in this paper.     

Back‐channel‐etched thin‐film transistor using c‐axis‐aligned crystal In–Ga–Zn oxide

Our crystalline In–Ga–Zn oxide (IGZO) thin film has a c‐axis‐aligned crystal (CAAC) structure and maintains crystallinity even on an amorphous base layer. Although the crystal has c‐axis alignment, its a‐axis and b‐axis have random arrangement; moreover, a clear grain boundary is not observed. We fabricated a back‐channel‐etched thin‐film transistor (TFT) using the CAAC‐IGZO film. Using the CAAC‐IGZO film, more stable TFT characteristics, even with a short channel length, can be obtained, and the instability of the back channel, which is one of the biggest problems of IGZO TFTs, is solved. As a result, we improved the process of manufacturing back‐channel‐etched TFTs.