Expression of cell adhesion molecules and the appearance of adherent leukocytes on the left atrial endothelium with atrial fibrillation: rabbit experimental model

To assess the expression of cell adhesion molecules and the appearance of leukocytes adhering to the left atrial endothelium with atrial fibrillation (AF), 10 Japanese white rabbits were anesthetized and 3 pacing leads were placed in the right atrium. For the AF model, the right atrium was stimulated by electrical pacing (the stimulation frequency of each lead being adjusted to different intervals) for 8h while the control model was subjected to a sham operation without atrial stimulation. The left atrial appendage was excised from the heart and examined immunohistochemically. P-selectin staining of the endothelium in both models was linear and regional, and intracellular adhesion molecule-1 (ICAM-1) in the AF model was confined to leukocytes and endothelial cells with adherent leukocytes. The expression of P-selectin (p<0.05) and the appearance of positively ICAM-1 stained adherent leukocytes (p<0.05) were significantly greater in the AF model than in the control model. In conclusion, AF could regulate the expression of at least 2 critical adhesion molecules, P-selectin and ICAM-1, and the appearance of adherent leukocytes; suggesting that these molecules may play an important role in left atrial thrombus formation with AF. Although anticoagulant therapy has generally been carried out with warfarin in AF patients, neutralizing antibodies to cell adhesion molecules should be tried to prevent thromboembolic complications.     

New thin-film composite reverse osmosis membranes and spiral wound modules

Two new series of thin-film composite reverse osmosis membranes have been developed and fabricated into spiral wound modules. The NTR-7100 series membrane is able to desalt sea and brackish water. The NTR-7250 membrane is designed for use at pressures below 20 kg/cm². The membrane has a very high water permeability and is resistant to chemical and microbiological attack. In particular, the membrane is stable to chlorine, as shown by long-term reverse osmosis tests with tap water containing about 1 ppm of residual chlorine. The membrane has an unusual pattern of solute rejection. Salts containing divalent anions, such as sodium sulphate or magnesium sulfate, are rejected more than 98%; while salts with monovalent anions and bivalent cations, such as magnesium chloride, are rejected about 90% and salts with monovalent anions and cations, such as sodium chloride, are rejected 30–50%. Neutral solutes have relatively high rejection; for example, glucose, 90% and sucrose, <99%.     

Oxygen Configuration in the Superconductor (Hg0.7Mo0.3)Sr2(Ca1?xRx)Cu2Oz (R = Nd and Pr)

Two series of Hg-based oxides (Hg_0.7Mo_0.3)Sr₂(Ca_1–x R _x )Cu₂O _z (R = Nd and Pr, 0.2 x 0.7) have been synthesized. Electrical-resistivity measurements show that these compounds are superconductors with maximum onset T _c of 107 and 102 K for Nd- and Pr-containing samples, respectively. The neutron powder diffraction experiments on both as-prepared and O₂-annealed samples of R = Nd revealed that the O(3) site at the HgO sheets are fully occupied and shifted towards the Hg/Mo site to form Mo–O bonds.     

Position Dependence of SS304 and Iron Phases in Welded Specimen by Neutron Diffraction and Bragg-Edge Transmission Method

We investigated the nondestructive examination method by neutron scattering. A welded plate of SS304 (fcc) and iron (bcc) was investigated using neutron diffraction and the Bragg-edge transmission method. We tried to clear the positions of the welded area, SS304 phase, and iron phase and to determine the lattice spacing. The determined value of d ₁₁₁ for SS304 is 2.07471(8) Å using neutron diffraction. With Bragg-edge transmission, it is possible to collect the information of a specimen as two-dimensional (2-D) images using a 2-D position sensitive detector at a pulse neutron source. The determined d ₁₁₁ of SS304 phase indicates between 2.0745(8) and 2.0752(9) Å depending on the measurement points using Bragg-edge transmission. The same tendency was also seen in iron phase. The determined d ₁₁₀ of the iron phase is 2.02802(1) Å using neutron diffraction. The determined d ₁₁₀ of iron phase indicates between 2.0266(7) and 2.0321(13) Å using Bragg-edge transmission. The determined d using diffraction exists within that of Bragg-edge transmission. In order to clarify the position dependency of the phase and lattice spacing, the combined diffraction and Bragg-edge transmission is effective.     

Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

Group-III-nitride semiconductors have shown enormous potential as light sources for full-colour displays, optical storage and solid-state lighting. Remarkably, InGaN blue- and green-light-emitting diodes (LEDs) emit brilliant light although the threading dislocation density generated due to lattice mismatch is six orders of magnitude higher than that in conventional LEDs. Here we explain why In-containing (Al,In,Ga)N bulk films exhibit a defect-insensitive emission probability. From the extremely short positron diffusion lengths (<4 nm) and short radiative lifetimes of excitonic emissions, we conclude that localizing valence states associated with atomic condensates of In-N preferentially capture holes, which have a positive charge similar to positrons. The holes form localized excitons to emit the light, although some of the excitons recombine at non-radiative centres. The enterprising use of atomically inhomogeneous crystals is proposed for future innovation in light emitters even when using defective crystals.     

UV laser diode with 350.9-nm-lasing wavelength grown by hetero-epitaxial-lateral overgrowth technology

We have demonstrated a UV-laser diode with a lasing wavelength of 350.9 nm, which has a GaN-AlGaN multiquantum-well (MQW) active layer and was grown on low-dislocation-density Al/sub 0.18/Ga/sub 0.82/N template. The Al/sub 0.18/Ga/sub 0.82/N template was produced by the hetero-epitaxial lateral overgrowth technology on the low-cost sapphire substrate, and has partially low-dislocation density of approximately 2/spl times/10/sup 7/ cm/sup -2/. The lasing operation under pulsed current injection was achieved with the threshold current density of 7.3 kA/cm/sup 2/ and the operating voltage of 10.4 V.