Self-Consistent Effects on the Starting Current of Gyrotron Oscillators

Self-consistent effects on the starting current of gyrotron oscillators are examined. Field profiles in the open cavity are shown to be sensitive to the interaction dynamics. This can either significantly raise or lower the oscillation threshold, particularly for the low-Q modes. The transition from resonant-mode oscillations at the low magnetic field to backward-wave oscillations at the high magnetic field is demonstrated.     

Equilibrium Moisture Characteristics of High Oleic Sunflower Seeds and Kernels

The equilibrium moisture content (EMC) characteristics of high oleic sunflower seeds and kernels between 10 and 55°C were determined by equilibrating the samples to known relative humidities (RH) above saturated salt solutions. EMC of the kernels was lower than that of seeds in the range of 11 to 96% ERH and at 25 and 40°C. Hysteresis effect was found for the EMC properties of seeds and kernels at 25°C. Four EMC-ERH models (modified Henderson, Chung-Pfost, Halsey, and Guggenheim-Anderson-de Boer) and their estimated parameters were evaluated for goodness of fit. GAB and Halsey equations showed the best fitting of experimental data although GAB equation adjusted for temperature described the EMC data the best. Components of the seed as oil content or hull/kernel ratio did not explain the slight differences in EMC found between the varieties.     

Short-term frequency stability of clock generators for multigigahertz rapid-single-flux quantum digital circuits

Superconducting digital systems based on Josephson junctions have generally used a synchronous timing strategy. A master clock signal is used to delimit a data window during which the system changes state and data is transferred from one block to the next. The temporal stability of the clock signal has a profound effect on the performance of rapid single flux quantum (RSFQ) digital systems. In particular, short-term clock fluctuations, or clock jitter, can degrade system performance due to the hazard of timing constraint violations. The successful development of large-scale RSFQ digital systems will require highly stable multigigahertz on-chip clock sources. To meet this need, methods for characterizing and measuring the short-term stability of such sources are required. We identify the relevant figure of merit to characterize and compare various clocks: the cycle-to-cycle standard deviation of the clock periods. We present experimental techniques for the measurement of this figure of merit and apply them to the measurement of jitter in a clock generator used often in RSFQ systems, the ring oscillator. High-frequency phase noise measurements found the jitter of a 9.6-GHz clock to be in the range from 0.6% to 0.36% of the clock period. The measured values of clock jitter fell within the 95% confidence interval of our stochastic circuit simulations. This was sufficient evidence to conclude that thermal noise from the resistors in the circuit may be the dominant source of jitter in the ring oscillator.     

Nanoscale Crystallization in the Amorphous Alloy Fe79P14.2Si4.4Mn2.2V0.2 upon Pulsed Photon Annealing

The effect of pulsed photon annealing with energy densities from 1.4 to 42 J/cm² for various lengths of time on the structure of the amorphous alloy Fe₇₉P_14.2Si_4.4Mn_2.2V_0.2 was studied by x-ray diffraction, differential scanning calorimetry, and transmission electron microscopy. The results demonstrate that short-term irradiation with low energy densities leads to surface relaxation of the amorphous alloy, increases the strength of the surface layer, and reduces the internal-friction peak. Longer term photon annealing leads to crystallization of the alloy throughout the sample thickness.     

Defect-free sintering of two material powder injection molded components Part II Model

A defect-free, two-material component can be obtained via co-sintering by suitably altering the powder characteristics or compositions, as demonstrated in Part I. In this paper, a model to ascertain the suitability of material systems to be co-sintered without defects such as delamination or interface pores is presented. The model is based on the management of the stress induced due to the difference in shrinkage and an analysis of the in situ strength of the weaker material during sintering. Tool steel in combination with stainless steel admixed with boron and Fe-2Ni admixed with boron are two systems used to validate the model. The predictions of the model are in good agreement with the observations.     

Presenting information on the small-screen interface: effects of table formatting

This study explored strengths and limitations of table formatting choices by engaging twenty-eight participants in information searches in online tables, presented on a small-screen interface (Palm IIIc). Table length across conditions was held constant at three screens long (24 rows total) but varied from one to three screens wide (approximately 35, 70, and 105 characters per line). Target information was positioned in either the upper left, lower left, upper right, or lower right quadrants. Data collected were time on task, error rate, and level of participants' confidence in their answers. Experimenters found that increased horizontal scrolling imposed the heaviest burden on information search. This study supports restricting table widths to one screen on handheld computers. If necessary, however, tables can go to two screens wide without critical detriment to usability. While ruled line formatting is slightly better than interface character in providing visual support for the burden of horizontal scrolling, neither formatting option adequately compensates for the added burden.     

Stabilization of singularly perturbed fuzzy systems

This paper presents some novel results for stabilizing singularly perturbed (SP) nonlinear systems with guaranteed control performance. By using Takagi-Sugeno fuzzy model, we construct the SP fuzzy (SPF) systems. The corresponding fuzzy slow and fast subsystems of the original SPF system are also obtained. Two fuzzy control designs are explored. In the first design method, we propose the composite fuzzy control to stabilize the SPF subsystem with H/sup /spl infin// control performance. Based on the Lyapunov stability theorem, the stability conditions are reduced to the linear matrix inequality (LMI) problem. The composite fuzzy control will stabilize the original SP nonlinear systems for all /spl epsiv//spl isin/(0,/spl epsiv//sup */) and the upper bound /spl epsiv//sup */ can be determined. For the second design method, we present a direct fuzzy control scheme to stabilize the SP nonlinear system with H/sup /spl infin// control performance. By utilizing the Lyapunov stability theorem, the direct fuzzy control can guarantee the stability of the original SP nonlinear systems for a given interval /spl epsiv//spl isin/[/spl epsiv/_,/spl epsiv/~]. The stability conditions are also expressed in the LMIs. Two SP nonlinear systems are adopted to demonstrate the feasibility and effectiveness of the proposed control schemes.     

Origin of the threshold voltage instability in SiO/sub 2//HfO/sub 2/ dual layer gate dielectrics

The magnitude of the V/sub T/ instability in conventional MOSFETs and MOS capacitors with SiO/sub 2//HfO/sub 2/ dual-layer gate dielectrics is shown to depend strongly on the details of the measurement sequence used. By applying time-resolved measurements (capacitance-time traces and charge-pumping measurements), it is demonstrated that this behavior is caused by the fast charging and discharging of preexisting defects near the SiO/sub 2//HfO/sub 2/ interface and in the bulk of the HfO/sub 2/ layer. Based on these results, a simple defect model is proposed that can explain the complex behavior of the V/sub T/ instability in terms of structural defects as follows. 1) A defect band in the HfO/sub 2/ layer is located in energy above the Si conduction band edge. 2) The defect band shifts rapidly in energy with respect to the Fermi level in the Si substrate as the gate bias is varied. 3) The rapid energy shifts allows for efficient charging and discharging of the defects near the SiO/sub 2//HfO/sub 2/ interface by tunneling.     

Influence of the Transport Properties of the Crystal/Heat Transfer Surface Interfacial on Fouling Behavior

One method to reduce fouling is to extend the induction time by a defined modification of the interfacial interactions between the heat transfer surface and the crystalline deposit. Since these interactions are a result of both molecular and mechanical forces, two approaches for fouling mitigation have been developed: (a) Modification of the energy related properties of the heat transfer surface and (b) Modification of the geometry related properties of the heat transfer surface.