Study on the Grain Refinement of an Al-Zn-Mg-Cu Alloy Prepared by LFEC Process

Low frequency electromagnetic casting(LFEC)process has been developed for years with the application of an induction coil outside the conventional direct chill(DC)casting mould.It has been demonstrated that the LFEC process has a significant grain refining effect on aluminium alloys.However,how it refines the microstructure is still not clearly understood.In the present work,the temperature measurement were carried out to study the temperature field during casting and to understand the mechanism of the grain refining effect of the LFEC process.The results showed that in contrast to the conventional DC casting process,during the LFEC process,the liquid melt flowing from the launder into the mould is cooled with very high cooling rate directly to 3-6℃below the liquidus and the temperature field of the entire melt in the mould and the hot top is quite uniform,which results in enhanced heterogeneous nucleation and improved survival rate of the nuclei.This is believed to be the main reason why the LFEC process can significantly refine the grain size of aluminium alloys.     

Velocity and turbulence characteristics in an open channel with multi-row staggered vegetation patches

A staggered distribution of vegetation is very common in nature,which might significantly affect the flow structure.To investigate its impact,three rows of stag...     

直流滤波器电容器的直流局部放电测量

为了配合葛州坝换流站直流滤波器电容器的损坏事故分析,进行了电容器常温和高温状态,直流电压作用下的局部放电试验。在常温和高温状态下,分别用双臂式抗干扰回路,和微窗口电路,有效地抑制了外部干扰。测量结果表明,电容器在高温状态下的直流局部放电量较常温下没有显著增加。文中还对电容器直流局部放电测量时所应注意的问题进行了讨论。     

MEMS微型双稳态电磁继电器的设计

本文利用通电平面螺旋线圈产生磁场特点,采用镜像绕制以及并联连接双线圈的方法,研制了一种快速低功耗MEMS微型双稳态继电器结构,其尺寸约为3mm*4.5mm*1.5mm,文中着重分析其工作原理和过程.经过分析,该继电器在通电电流80～120mA时,开关时间约在0.1ms～0.2ms之间,因此,其具有体积小、开关速度快、低功耗等优点,并且易于集成和阵列,适用于能源有限并且可靠性要求高的微型航天器以及便携设备中.     

除盐水制备技术进展

介绍了几种水除盐技术(蒸馏、离子交换、电渗析、反渗透、电去离子和电吸附)的原理、发展及应用现状,分析了水除盐技术发展的整体脉络,并预测了发展前景.     

结合继电保护定期检验浅谈对状态检修的认识和看法

根据继电保护运行和维护特点，结合运城供电系统当前实际情况，分析了二次设备状态检修的各种问题并提出相应采取的措施。     

在结冰状态下一次设备闪络事故分析

介绍了玉贤变电站500 kV电流互感器的冰闪事故情况,分析事故的原因为瓷瓶表面纵向结冰不均匀引起径向电位差使外绝缘闪络。提出采用增爬裙能有效阻断冰桥。     

Reentrant Spin Glass and Large Coercive Field Observed in a Spin Integer Dimerized Honeycomb Lattice

2D magnetic materials with dimerized honeycomb lattices can be treated as mixed-spin square lattices, in which a quantum phase transition may occur to realize the Bose–Einstein condensation of magnons under reachable experimental conditions. However, this has never been successfully realized with integer spin centers. Herein, a spin integer (S = 2) dimerized honeycomb lattice in an iron(II)-azido compound [Fe(4-etpy)₂(N₃)₂]_n (FEN, 4-etpy = 4-ethylpyridine) is realized. Morphology characterization by transmission electron microscopy, scanning electron microscopy, and atomic force microscopy spectroscopies show that the thinnest place of the sample is ≈13 nm, which is equal to ten layers of the compound. In contrast to the common magnetic properties of long-range magnetic ordering, Mössbauer and polarized neutron scattering studies reveal that FEN exhibits a reentrant spin glass behavior owing to competing ferro- and antiferromagnetic exchange-coupling interactions within the lattice. Two spin glass phases with disparate canting angles are characterized at 39 and 28 K, respectively. By using Curély's model, two exchange-coupling constants (J₁ = +35.8 cm⁻¹ and J₂ = −3.7 cm⁻¹) can be simulated. Moreover, a very large coercive field of ≈1.9 Tesla is observed at 2 K, making FEN a “very hard” van der Waals 2D magnetic material.     

水洗法分离油砂工艺优化

对油砂水剂进行优化,以内蒙古图牧吉油砂为实验对象,考察水剂质量分数、剂砂质量比、搅拌时间及搅拌温度对尾砂残油率的影响。结果表明,在水剂质量分数为3.50%、剂砂质量比为0.4∶1.0、搅拌时间为25 min、搅拌温度为90 ℃条件下,内蒙古油砂尾砂残油率降至0.71%。改进后的水剂降低了水洗法分离油砂的剂耗与尾砂残油率。     

Improvement of the Q-factor,for an adjustable inductor using a 90-μm silicon substrate on plastic

This article presents a four-port adjustable inductor with 0.18?µm Complementary Metal-Oxide-Semiconductor (CMOS) technology on plastic. The inductor has a high Q-factor and a small size for multiband UWB applications. When the four-port adjustable inductor, on VLSI-standard Si substrate, operates near 3, 4, 7.5 and 9?GHz, it has a Q-factor of 6.5, 6.7, 8 and 11.5 and an inductance of 2.1, 1.6, 1.1, 0.6?nH, respectively. Reducing the thickness of the Si substrate to 90?µm and mounting it on plastic causes a 25–31% improvement in the Q-factor, without change in the inductance, due to a reduction in the parasitic effect from the Si substrate. This is useful for multiband applications.