Programmable group-delay module using binary polarization switching

We demonstrate the first programmable group-delay module based on polarization switching. With a unique binary tuning mechanism, the device can generate any differential group delay value from -45 to +45 ps with a resolution of 1.40 ps, or any true-time-delay value from 0 to 45 ps with a resolution of 0.7 ps. The delay varying speeds for both applications are under 1 ms and can be as fast as 0.1 ms. We evaluate both the dynamic and static performances of the device while paying special attention to its dynamic figures of merit for polarization-mode dispersion emulation and compensation applications. Our experiment shows that the device exhibits a negligible transient-effect induced power penalty (<0.2 dB) in a 10-Gb/s nonreturn-to-zero system.     

Origin of the threshold voltage instability in SiO/sub 2//HfO/sub 2/ dual layer gate dielectrics

The magnitude of the V/sub T/ instability in conventional MOSFETs and MOS capacitors with SiO/sub 2//HfO/sub 2/ dual-layer gate dielectrics is shown to depend strongly on the details of the measurement sequence used. By applying time-resolved measurements (capacitance-time traces and charge-pumping measurements), it is demonstrated that this behavior is caused by the fast charging and discharging of preexisting defects near the SiO/sub 2//HfO/sub 2/ interface and in the bulk of the HfO/sub 2/ layer. Based on these results, a simple defect model is proposed that can explain the complex behavior of the V/sub T/ instability in terms of structural defects as follows. 1) A defect band in the HfO/sub 2/ layer is located in energy above the Si conduction band edge. 2) The defect band shifts rapidly in energy with respect to the Fermi level in the Si substrate as the gate bias is varied. 3) The rapid energy shifts allows for efficient charging and discharging of the defects near the SiO/sub 2//HfO/sub 2/ interface by tunneling.     

Study of internal behavior in a vertical DMOS transistor under short high current stress by an interferometric mapping method

Current distribution in vertical double-diffused MOS (DMOS) transistors of a Smart Power Technology are investigated under high current, short duration operation conditions by means of a backside laser interferometric thermal mapping technique. DMOS devices of different areas are studied under pulsed gate forward operation mode and under electrostatic discharge (ESD)-like stress with floating and grounded gate. The internal behavior of the devices observed by thermal mapping under these stress conditions is correlated with the electrical characteristics.     

Thermal aging of plasticized PVC. I. Weight loss kinetics in the PVC—didecylphtalate system

Weight-loss kinetics were studied for 10 industrial extruded samples of poly(vinyl chloride) (PVC) plasticized by 20–30% by weight of didecylphtalate at 85, 95, 105, 110, and 120deg;C. For the most unstable samples, which contained a light coplasticizer, the weight-loss rate obeyed Fick's law. In the other cases, it was constant in the early period of exposure. The apparent Arrhenius parameters (i.e., preexponential factor and activation energy) were intercorrelated and varied strongly from one sample to another. This was explained by the existence of two distinct kinetic regimes corresponding, respectively, to diffusion or evaporation, the whole process being controlled by the slowest step, and a transition between both regimes occurring in the temperature range of exposure. In the proposed model, small changes of the preexponential factor of diffusion from one sample to another are sufficient to take into account the observed behavior.     

Optoelectronically-pulsed antennas: characterization andapplications

A brief tutorial on the picosecond photoconductive effect is given. The use of picosecond optoelectronics for the characterization of broadband antennas is described. In particular, the transient radiation properties of equiangular-spiral and exponentially tapered coplanar-strip antennas are discussed. The transient radiation behavior and the polarization and radiation patterns of these antennas are easily determined with this measurement technique, without the need for anechoic chambers. Applications of picosecond-duration transient electromagnetic radiation to filter measurements, materials measurements, and scattering studies are discussed     

The Challenge of the Market

Identifying markets for new or improved products for minor crops threatened with extinction is one critical component of any strategy intended to enhance prospects for sustainable production and use. Typically, however, activities linked to the sustainability of these commodities avoid addressing questions associated with assessing their commercial potential. After a brief review of this avoidance syndrome, this article presents a sample of practical, low-cost procedures to help evaluate the market prospects and procedures for crops like quinoa, while citing references to other methodological materials covering similar topics.     

Comments, with reply, on `Passive equalization of semiconductordiode laser frequency modulation' by S.B. Alexander et al

Some flaws in a recent article by S.B. Alexander et al. (ibid., vol.7, no.1, p.11-23, Jan. 1989) on the theory of equalization of FM response of a laser diode using passive filters are noted. An error has occurred as a result of assuming a constant C as a positive instead of negative. When C is negative and large, the equalization network cannot be realized with passive networks. Also the simulated time waveform shown in the article for the optical frequency of an equalized laser does not show some spikes which are expected theoretically. The spikes occur as a result of an imperfect equalization provided by the proposed passive filters that were realized assuming C as positive. In replying the original author feels that the comments and observations result simply from attempting to extend the simple FM transfer-function model far beyond its limits while trying to introduce unnecessary theoretical rigor     

Structure determination of CaMgGeO4

The crystal structure of CaMgGeO₄ is described. CaMgGeO₄, M_r = 200.9, orthorhombic, Pnam, A = 11.285(5) Å, B = 5.016(2) Å, C = 6.435(2) Å, V = 364.36 ų, Dx = 3.664 Mg/m³.λ(MoK_a = 0.71069 Å, F(000) = 384, room temperature, final R = 0.045 for 1752 observed reflections. The structure is isomorphous with CaMgSiO₄ (monticellite).