A review of object orientation and knowledge processing in office models

The purpose of this paper is to provide an analysis of the alternative modelling systems for office information systems. More specifically, we are interested in identifying the current research trends of merging office modelling ideas together with concepts that owe their origin to the object-oriented paradigm and to artificial intelligence. In this respect an office model is defined as encompassing three domains: passive office objects; dynamically defined and manipulated office procedures; and goal-directed office tasks. Following this definition we exploit the potential of using the object-oriented and knowledge representation techniques for modelling each of the three domains using evidence from real-world applications.     

An improved analysis of experimental data from 125 I hot-line autoradiographs: allowing for the effects of background grains

In this paper we suggest a new statistical method of correcting the results of hot-line experiments for the effects of background sources and we use the new method to reassess the adequacy of three probability distributions proposed in the literature for image spread from line sources. The data are from sources labelled with ¹²⁵I in semi-thin resin sections 0·4-0·8 μm in thickness. The new method reveals that two of the models describe the empirical distributions more closely than earlier analysis had suggested, and it confirms an increasing relationship between half distance of image spread and the thickness of the source. However, it also confirms that considerable ‘inter hot-line’ experimental variation remains, even after background correction. This suggests that multiple experiments are needed to produce reliable estimates of half distance.     

Study of impurity induced modifications in amorphous N-type (GeSe3·5)100−x Bi x using high pressure technique

The technique of high pressure is utilized to study the carrier transport behaviour in doped and undoped bulk amorphous (GeSe_3·5)_100−x Bi _x (x=0, 2, 4, 10) down to liquid nitrogen temperature to observe impurity induced modifications in amorphous semiconductors. It is observed that pressure induced effects in lightly doped (2 at % Bi) and heavily doped (x=4, 10) semiconductors are markedly different. Results are discussed in view of the incorporation behaviour of the bismuth impurity.     

Response to comments on upgrading of middle distillate fractions of a syncrude from Athabasca oil sands

In response to an interpretation made by Moore and Akgerman of data taken from a recent publication, previously unexplainable phenomena are accounted for, based on new experimental results. These relate to a thermodynamic equilibrium reaction involving saturation of aromatic hydrocarbons in synthetic crude middle distillates.