Consideration of the Actual Current-Spreading Length of GaN-Based Light-Emitting Diodes for High-Efficiency Design

Based on the proposed experimental method, the current spreading length of GaN-based light-emitting diodes (LEDs) was measured and analyzed for practical device design. In this study, Thompson's and Guo's models, which are categorized according to vertical series resistance (in particular, p-type contact resistance), were used to extract device parameters. It was shown that the measured current spreading length strongly depends on the injected current density. For LEDs fabricated with low-resistance p-type contacts, this behavior could be explained in terms of the accelerated current crowding with higher current densities occurring as a result of the reduced voltage drop across the junction, which is in good agreement with Thompson's relation. However, for LEDs fabricated with high-resistance p-contacts, unlike Guo's prediction, the measured current spreading length also showed a strong dependence on the injected current density. This was attributed to thermal heating at the p-contact, resulting in the reduction of the voltage drop across the p-contact and so junction voltage, which is also in agreement with Thompson's model. Based on the measured parameters and the design rule, efficient p-type reflectors, namely, hybrid reflectors were designed. Compared with conventional ones, LEDs fabricated with the hybrid reflectors exhibited better output power at a reasonable forward voltage, indicating that the proposed method is effective in understanding the actual current spreading and hence the practical design of high-efficiency LEDs.     

An ultraminiature CMOS pressure sensor for a multiplexedcardiovascular catheter

A multiplexed ultraminiature pressure sensor designed for use in a cardiovascular catheter is described. The sensor operates from only two loads, which are shared by two sensors per catheter. The sensing chip is 350 μm wide by 1.4 mm long by 100 μm thick. CMOS readout circuitry at the sensing site converts applied pressure to a frequency variation in the supply current, which is detected at the end of the catheter by a microprocessor-controlled interface. The nominal pressure sensitivity is 2 kHz/fF about a zero-pressure output frequency of 2.7 MHz. This on-site circuitry contains two reference capacitors which allow external compensation for nonlinearity and temperature sensitivity and has an idle-state power dissipation of less than 50 μW. With the transducer sealed at ambient pressure, the device can resolve pressure variations of about 3 mmHg, while vacuum-sealed devices do considerably better and should permit <2 mmHg resolution in practical systems     

Synchronous current control scheme with reference voltage estimation for voltage-fed PWM inverter

A new current control scheme with the reference voltage estimation for a voltage-fed pulsewidth modulated (PWM) inverter is presented. This scheme is simple and can provide smaller current error than predictive control with the same switching frequency when the load parameters are mismatched.<>     

An equalization technique for orthogonal frequency-divisionmultiplexing systems in time-variant multipath channels

A loss of subchannel orthogonality due to time-variant multipath channels in orthogonal frequency division multiplexing (OFDM) systems leads to interchannel interference (ICI) which increases the error floor in proportion to the Doppler frequency. A simple frequency-domain equalization technique which can compensate for the effect of ICI in a multipath fading channel is proposed. In this technique, the equalization of the received OFDM signal is achieved by using the assumption that the channel impulse response (CIR) varies in a linear fashion during a block period and by compensating for the ICI terms that significantly affect the bit-error rate (BER) performance     

ATM switch with distributed queue windowing scheme

The input queueing switch can be enhanced using a non-first come-first-service (non-FCFS) discipline like window scheme. However, large window sizes are not feasible in centralised contention resolution algorithms due to the increased internal bit rate. Based on the distributed queue concept, a new window scheme for the ATM switch is proposed where the window size can be easily extended. The proposed scheme does not require that the scheduling hardware be speeded up in proportion to the window size, which is essential in the conventional window scheme     

A /spl Sigma/-/spl Delta/ fractional-N frequency synthesizer using a wide-band integrated VCO and a fast AFC technique for GSM/GPRS/WCDMA applications

A fractional-N frequency synthesizer (FNFS) in a 0.5-/spl mu/m SiGe BiCMOS technology is implemented. In order to operate in a wide-band frequency range, a switched-capacitors bank LC tank voltage-controlled oscillator (VCO) and an adaptive frequency calibration (AFC) technique are used. The measured VCO tuning range is as wide as 600 MHz (40%) from 1.15 to 1.75 GHz with a tuning sensitivity from 5.2 to 17.5 MHz/V. A 3-bit fourth-order /spl Sigma/-/spl Delta/ modulator is used to reduce out-of-band phase noise and to meet a frequency resolution of less than 3 Hz as well as agile switching time. The experimental results show -80 dBc/Hz in-band phase noise within the loop bandwidth of 25 kHz and -129 dBc/Hz out-of-band phase noise at 400-kHz offset frequency. The fractional spurious is less than -70 dBc/Hz at 300-kHz offset frequency and the reference spur is -75 dBc/Hz. The lock time is less than 150 /spl mu/s. The proposed synthesizer consumes 19.5 mA from a single 2.8-V supply voltage and meets the requirements of GSM/GPRS/WCDMA applications.     

Optoelectronic and microwave transmission characteristics of indium solder bumps for low-temperature flip-chip applications

This paper describes low-temperature flip-chip bonding for both optical interconnect and microwave applications. Vertical-cavity surface-emitting laser (VCSEL) arrays were flip-chip bonded onto a fused silica substrate to investigate the optoelectronic characteristics. To achieve low-temperature flip-chip bonding, indium solder bumps were used, which had a low melting temperature of 156.7/spl deg/C. The current-voltage (I-V) and light-current (L-I) characteristics of the flip-chip bonded VCSEL arrays were improved by Ag coating on the indium bump. The I-V and L-I curves indicate that optical and electrical performances of Ag-coated indium bumps are superior to those of uncoated indium solder bumps. The microwave characteristics of the solder bumps were investigated by using a flip-chip-bonded coplanar waveguide (CPW) structure and by measuring the scattering parameter with an on-wafer probe station for the frequency range up to 40 GHz. The indium solder bumps, either with or without the Ag coating, provided good microwave characteristics and retained the original characteristic of the CPW signal lines without degradation of the insertion and return losses by the solder bumps.     

Unraveling the Significance of Li+/e−/O2 Phase Boundaries with a 3D-Patterned Cu Electrode for Li–O2 Batteries

The reaction kinetics at a triple-phase boundary (TPB) involving Li⁺, e⁻, and O₂ dominate their electrochemical performances in Li–O₂ batteries. Early studies on catalytic activities at Li⁺/e⁻/O₂ interfaces have enabled great progress in energy efficiency; however, localized TPBs within the cathode hamper innovations in battery performance toward commercialization. Here, the effects of homogenized TPBs on the reaction kinetics in air cathodes with structurally designed pore networks in terms of pore size, interconnectivity, and orderliness are explored. The diffusion fluxes of reactants are visualized by modeling, and the simulated map reveals evenly distributed reaction areas within the periodic open structure. The 3D air cathode provides highly active, homogeneous TPBs over a real electrode scale, thus simultaneously achieving large discharge capacity, unprecedented energy efficiency, and long cyclability via mechanical/electrochemical stress relaxation. Homogeneous TPBs by cathode structural engineering provide a new strategy for improving the reaction kinetics beyond controlling the intrinsic properties of the materials.     

GaAs vertical-cavity surface emitting lasers fabricated by reactive ion etching

GaAs quantum well vertical-cavity surface emitting lasers fabricated using low damage reactive ion etching are discussed. Lasers which are partially and completely etched through their structure are compared. The surface recombination velocity of exposed GaAs is not exacerbated in deep etched lasers; other loss mechanisms in shallow etched lasers have comparable impact on laser performance. Etched lasers exhibit low voltage and small differential series resistance at threshold, while devices fabricated by a combination of etching and ion implantation possess lower threshold current. It is found that reactive ion etching has little additional effect on laser operation, whereas the different device structures considered do influence laser performance.<>