High resistivity measurement of SiC wafers using different techniques

To establish fast, nondestructive, and inexpensive methods for resistivity measurements of SiC wafers, different resistivity-measurement techniques were tested for characterization of semi-insulating SiC wafers, namely, the four-point probe method with removable graphite contacts, the van der Pauw method with annealed metal and diffused contacts, the current-voltage (I-V) technique, and the contactless resistivity-measurement method. Comparison of different techniques is presented. The resistivity values of the semi-insulating SiC wafer measured using different techniques agree fairly well. As a result, application of removable graphite contacts is proposed for fast and nondestructive resistivity measurement of SiC wafers using the four-point probe method. High-temperature van der Pauw and room-temperature Hall characterization for the tested semi-insulating SiC wafer was also obtained and reported in this work.     

计算机网络安全系统设计

分析了现代计算机网络所面临的威胁和各种安全问题,同时提出了在设计一个有关网络系统时应该考虑的一些安全问题,如网络安全策略与技术、网络的访问控制、网络数据加密技术、信息隐藏技术等安全问题。     

氨精制装置运行问题分析及改造措施

通过分析中国石油兰州石化分公司炼油厂氨精制装置存在的运行问题,提出了相应的改造措施,包括在分凝器脱液管线上新增隔离阀门、更换三级冷凝冷却器、更换氨压缩机及采用低温结晶脱硫工艺等。改造后装置运行结果表明:三级分凝器出口温度由70℃降至小于35℃,压缩机吸气量由5 m3/m in提高至74 m3/m in,原料酸性水中硫化氢质量分数下降45.5%,氨质量分数下降55.5%,净化水合格率达100%,氨精制塔塔顶温度下降5~20℃,液氨中氨质量分数由97.05%上升至99.60%,液氨产量达0.125 t/h,实现了装置的长周期运行。     

流量比对等离子体基团分布和薄膜结构的影响

使用光强标定的发射光谱(AOES)测量了CHF3／C6H6混合气体的微波电子回旋共振(ECR)放电等离子体中基团的分布状态。实验发现随着CHF3流量的增加，成膜基团CF、CF2、CH等的相对密度增大，而刻蚀基团F的密度也会增加，从而使得a—C：F薄膜的沉积速率降低。同时红外吸收谱(IR)分析表明，在高CHF3流量下沉积的a—C：F薄膜中含有更高的C—F键成分。可见在a—C：F薄膜的制备中CHF3／(CHF3 C6H6)流量比是重要的控制参量。     

GMSK无线接收终端设计

设计了GMSK(Gauss Minimum Shift Keying，高斯最小频移键控)无线接收终端的硬件与软件系统。硬件的射频电路对空中信号进行接收与滤波，再由以MX589构成的解调模块解调，输出数字信号；数字硬件以单片机GMS97L5为核心。软件系统设计了对IC卡AT88SCl608加密卡的认证以及对串行数据的接收与处理的中断程序。终端系统接收数据快、性能稳定。     

RFA—300型自动分析仪检测总植物碱的改进

对连续流动法测定烟草及烟草制品中总植物碱的各影响因素进行了试验研究,并根据试验结果对仪器管路进行相应的改造。实验结果表明,烟草制品中总植物碱的连续流动法测定,改进后方法的回收收率高、重现性好。     

An optimization model for placement of wavelength converters to minimize blocking probability in WDM networks

The introduction of wavelength converters in wavelength division multiplexing (WDM) networks can reduce the blocking probabilities of calls. In this paper, we study the problem of placing a given number of converters in a general topology WDM network such that the overall system blocking probability is minimized. The original contributions of this work are the following: 1) formulation of success probability in a network as a polynomial function of the locations of converters; 2) proposal of an optimization model of the converter placement problem as the minimization of a polynomial function of 0-1 variables under a linear constraint, so that standard optimization tools can be employed to solve the problem; and 3) design of a search algorithm that can efficiently find the optimal solution to the converter placement problem. Experiments have been conducted to demonstrate the effectiveness of the proposed model and the efficiency of the algorithm.     

用CMOS工艺实现VSR光电集成接收机的途径

介绍了10Gbit／s速率的甚短距离光传输系统VSR(Very Short Reach)中的接收机。分析了几种有希望用于VSR系统的CMOS工艺兼容的光电探测器。提出用CMOS电路实现VSR光电集成(OEIC)接收机的可能性和实现方法。     

不倒翁式偏心防斜钻具的设计

目前所使用的各种钻具主要是靠钻具本身的重力来产生降斜力,在井斜角很小时,降斜力一般很小,在某些区块钻井时不能满足防斜要求。据此,设计了一种不倒翁式偏心防斜钻具。该钻具有1段钻铤,钻铤的两端各有1个偏心稳定器,钻铤外表面有一半圆形的偏心块,在钻铤和偏心块之间有轴承结构。利用不倒翁原理,当井斜超过一定值时,偏心块会在重力作用下自动停留在井眼低边,这样就可以将此处的钻柱顶到井眼的高边上去,从而产生一个很大的降斜力,使井斜得以有效控制。     

Contact stresses in an infinite plate containing a smooth circular insert under thermal load

Summary. A solution is presented for the contact problem with a smooth circular elastic insert in an infinite, linearly elastic plate under thermal load. The thermal load considered here includes the temperature gradient applied at infinity and a uniform temperature change. One of the major difficult parts in solving the present problem is that separation may occur between an insert or inclusion and the surrounding matrix under a nonuniform expansion of the matrix and the insert due to a temperature change. Based on the complex potential theory and the method of analytical continuation, the problem is reduced to a singular integro-differential equation which is solved numerically. Results are presented for the contact angle and for the normal and circumferential stresses at the plate-insert interface. Exact solutions are found for the current problem for a special case when the material properties of the plate and the insert are identical.