20-nm optical wavelength conversion using nondegenerate four-wavemixing

Wavelength conversion of optical signals over 20 nm is demonstrated using highly nondegenerate four-wave mixing in a semiconductor traveling-wave optical amplifier. This technique has the potential for extremely-high-speed operation and allows continuous tuning of both input and output wavelengths over the amplifier gain bandwidth. It is demonstrated that, even for such a large wavelength conversion range, it is possible to obtain conversion efficiencies in excess of -10 dB and high extinction ratios. The feasibility of the technique is demonstrated by system measurements at 622 Mb/s, showing a 1.1-dB power penalty at 10^-9 bit error rate (BER)     

Étude du refroidissement avec solidification d'un fluide pseudoplastique thermodépendant

Heat transfer of highly consistent shear-thinning fluids flowing in a horizontal cylindrical channel has been investigated numerically and experimentally when the outer channel wall is subjected to a constant convective heat exchange. The case considered being cooling, a possible ice deposit must be taken into account. The variation of the rheological properties with temperature must be considered as well.     

Strengthening of concrete prisms using the plate-bonding technique

This paper presents the use of fracture mechanics for the plate bonding technique. Plates of steel or carbon-fibre reinforced plastic are bonded with an epoxy adhesive to rectangular concrete prisms and loaded in shear up to failure, what is normally known in fracture mechanics as mode II failure. In this special application a linear and a nonlinear approach are presented. The nonlinear equation derived for a realistic shear-deformation curve can only be used for numerical calculations. However, for simplified shear-deformation curves, the derived formula can be solved analytically. Results from tests, which are compared with the theory, are also presented.     

Normal-incidence InAs self-assembled quantum-dot infrared photodetectors with a high detectivity

An InAs/AlGaAs quantum-dot infrared photodetector based on bound-to-bound intraband transitions in undoped InAs quantum dots is reported. AlGaAs blocking layers were employed to achieve low dark current. The photoresponse peaked at 6.2 /spl mu/m. At 77 K and -0.7 V bias, the responsivity was 14 mA/W and the detectivity, D*, was 10/sup 10/ cm/spl middot/Hz/sup 1/2//W.     

50 years of the IEEE Microwave Theory and Techniques Society

The early history of the IEEE Microwave Theory and Techniques Society (IEEE MTT-S) is summarized since its founding in 1952, and all administrative committee members and presidents are listed. Some of the more recent changes resulting from growth and multinational participation are described. Publications are discussed with editors listed for this Transactions, the IEEE Microwave and Wireless Components Letters, the IEEE Microwave Newsletter, and IEEE Microwave Magazine. The chronological evolution of the IEEE MTT-S's awards is presented, including a listing of all award winners. Distinguished lecturers and microwave symposia sites and chairpersons are also discussed. Early technology trends are described     

General properties of antennas

In antenna design there are some fundamental relationships based on reciprocity. The equivalence of antenna pattern in transmission and reception is well known. Less well known is the time-derivative relationship going from reception to transmission. These relationships are derived here and expressed in various useful forms. Electric and magnetic dipoles are given special consideration, and the combined form constructed as a terminated TEM transmission line (the BTW antenna) is discussed for its transmission and reception properties     

Fabrication of 1.55 μm VCSELs on Si using metallic bonding

Using AuGeNiCr multilayered metals as the wafer bonding medium, long-wavelength GaInAsP/InP vertical cavity surface emitting lasers employing Al-oxide/Si as the upper and lower distributed Bragg reflectors were fabricated on Si substrate with the bonding interface formed outside the vertical cavity surface emitting laser cavity. Laser emission at 1.545 μm was measured under pulsed operations near room temperature. The low-temperature metallic bonding process demonstrates a great potential in device fabrication     

Electromigration-induced damage in bamboo Al interconnects

Depletion and hillock formation were examined in-situ in a scanning electron microscope (SEM) during electromigration of bamboo Al interconnect segments. Hillocks formed directly at the anode ends of the segments by epitaxial addition of Al at the bottom Al/TiN interface. Depletion occurred nonuniformly from the cathode end and stopped once the distance between the leading void and the hillock reached the critical length for electromigration at the given current density. A modified equation for the drift velocity is proposed, which includes the effect of nonuniform depletion and predicts that interconnects with nonuniform depletion are more reliable than those with uniform depletion.