Characterisation of interfaces in nanocrystalline palladium

Structures of grain boundaries and triple line junctions in nanocrystalline materials are of interest owing to large fractions of atoms in nanocrystalline materials being at these interfacial positions. Grain boundary and triple line junction structures in nanocrystalline palladium have been studied using high-resolution transmission electron microscopy (HRTEM). The main micro structural features observed include the varying atomic structures of grain boundaries and the presence of disordered regions at triple line junctions. Also, there is variation in lattice parameters in different nanocrystalline grains. Geometric phase analysis is used to quantify atomic displacements within nanocrystalline grains. Displacement fields thus detected indicate links to the interface structures.     

Planar lightwave integrated circuits with embedded actives for board and substrate level optical signal distribution

This paper explores design options for planar optical interconnections integrated onto boards, discusses fabrication options for both beam turning and embedded interconnections to optoelectronic devices, describes integration processes for creating embedded planar optical interconnections, and discusses measurement results for a number of integration schemes that have been demonstrated by the authors. In the area of optical interconnections with beams coupled to and from the board, the topics covered include integrated metal-coated polymer mirrors and volume holographic gratings for optical beam turning perpendicular to the board. Optical interconnections that utilize active thin film (approximately 1-5 /spl mu/m thick) optoelectronic components embedded in the board are also discussed, using both Si and high temperature FR-4 substrates. Both direct and evanescent coupling of optical signals into and out of the waveguide are discussed using embedded optical lasers and photodetectors.     

EXPLORING FOR FAN AND DELTA SANDSTONES IN THE OFFSHORE FALKLANDS BASINS

Four basins surround the Falkland Islands, but only the North Falkland Basin has been drilled; six wells were drilled there in 1998. Although all six wells encountered good quality sandstones, none of them targeted the basin margins, on what are now thought to be the optimum migration pathways associated with the basin's thick lacustrine source rocks. Subsequently, a 3D seismic survey acquired in 2004 was designed to identify potential basin-margin -derived sandstones entering the basin along transfer zones. From this survey, a number of basin-margin -attached fans have been identified; these prograded into lacustrine waters of varying depths. These Early Cretaceous alluvial/fan delta/deep-lacustrine fan systems are interpreted to provide excellent potential reservoir facies as they are intimately associated with thick, mature source rocks. They will provide the focus for the next planned phase of exploration in the North Falkland Basin.
A phase of drilling is also planned for the basins to the south of the Islands, where large deltaic and fan systems, slightly younger than those imaged in the North Falkland Basin, are seen on seismic to prograde from the same Palaeozoic hinterland that produced the older, North Falkland Basin fans.
This paper attempts to show how sedimentary models derived from targeted seismic programmes following initial exploration can be utilised to plan and improve new drilling campaigns in a frontier basin. It presents an analysis of sediment dispersal patterns in basins of marine and lacustrine origin linked to a single hinterland area, and highlights the nature of the relationship between relay ramp/transfer zone development and sediment dispersal patterns in the subsurface.     

X-ray or UV adjustment of MOS threshold voltage: Analytical and numerical modeling

A model is formulated that describes how radiation-induced charge accumulates in the gate oxide of a MOS structure and how it decays through tunneling and thermal emission. The model is used in a numerical analysis of the x-ray or UV adjustment of threshold voltage in MOS-circuit manufacture. The limits of this process technique are evaluated.     

Nondegenerate Phase-Locking of a Semiconductor Laser by Sideband Injection

A semiconductor laser rate equation theory is presented that describes sideband injection locking under both weak optical injection and current modulation. By simultaneous optical injection and current modulation, control of both the phase and the frequency of a semiconductor laser is demonstrated. The phase-locked semiconductor laser operates at a different frequency to the optical injection source, with a frequency-difference given by the current modulation frequency. This method can be used to produce broadband sources, such as those producing ultrashort pulses and those required for coherent control, or to create high-frequency electronic oscillator sources with phase control by interference beating     

Second harmonic generation from a ferroelectric film

We derive an expression for transmittivity (T_SHG) of second harmonic generation (SHG) signals from a ferroelectric (FE) film. Intensities of up and down fields in the medium are investigated in relation to T_SHG. The derivations are made based on undepletion of input fields and nonlinear wave equation derived from the Maxwell equations. We present two cases: film without mirrors and with partial mirrors. Expressions for the newly derived nonlinear susceptibility coefficients of SHG for real crystal symmetry [J. Opt. Soc. Am. B 19 (2002) 2007] are used to get more realistic results. Variations in T_SHG with respect to film thickness are illustrated.     

Sputtering mechanisms near the threshold energy

Threshold energies for sputtering cannot be calculated directly but have to be evaluated from the energy dependence of the sputtering yields. This paper investigates trajectories of projectile and recoils near the threshold energy for sputtering, where the collision cascade becomes increasingly simple. Statistics of the different collision events show which processes dominate the sputtering close to the threshold energy for selfbombardment of different light and heavy targets. The differential cross-sections for scattering and recoil production explain qualitatively the probability for the various processes.     

1/f noise in large-area Hg<Subscript>1−x</Subscript>Cd<Subscript>x</Subscript>Te photodiodes

The 1/f noise in photovoltaic (PV) molecular-beam epitaxy (MBE)-grown Hg_1−xCd_xTe double-layer planar heterostructure (DLPH) large-area detectors is a critical noise component with the potential to limit sensitivity of the cross-track infrared sounder (CrIS) instrument. Therefore, an understanding of the origins and mechanisms of noise currents in these PV detectors is of great importance. Excess low-frequency noise has been measured on a number of 1000-μm-diameter active-area detectors of varying “quality” (i.e., having a wide range of I-V characteristics at 78 K). The 1/f noise was measured as a function of cut-off wavelength under illuminated conditions. For short-wave infrared (SWIR) detectors at 98 K, minimal 1/f noise was measured when the total current was dominated by diffusion with white noise spectral density in the mid-10⁻¹⁵A/Hz^1/2 range. For SWIR detectors dominated by other than diffusion current, the ratio, α, of the noise current in unit bandwidth i_n(f = 1 Hz, V_d = −60 mV, and Δf = 1 Hz) to dark current I_d(V_d = −60 mV) was α_SW-d = i_n/I_d ∼ 1 × 10⁻³. The SWIR detectors measured at 0 mV under illuminated conditions had median α_SW-P = i_n/I_ph ∼ 7 × 10⁻⁶. For mid-wave infrared (MWIR) detectors, α_MW-d = i_n/I_d ∼ 2 × 10⁻⁴, due to tunneling current contributions to the 1/f noise. Measurements on forty-nine 1000-μm-diameter MWIR detectors under illuminated conditions at 98 K and −60 mV bias resulted in α_MW-P = i_n/I_ph = 4.16 ± 1.69 × 10⁻⁶. A significant point to note is that the photo-induced noise spectra are nearly identical at 0 mV and 100 mV reverse bias, with a noise-current-to-photocurrent ratio, α_MW-P, in the mid 10⁻⁶ range. For long-wave infrared (LWIR) detectors measured at 78 K, the ratio, α_LW-d = i_n/I_d ∼ 6 × 10⁻⁶, for the best performers. The majority of the LWIR detectors exhibited α_LW-d on the order of 2 × 10⁻⁵. The photo-induced 1/f noise had α_LW-P = i_n/I_ph ∼ 5 × 10⁻⁶. The value of the noise-current-to-dark-current ratio, α appears to increase with increasing bandgap. It is not clear if this is due to different current mechanisms impacting 1/f noise performance. Measurements on detectors of different bandgaps are needed at temperatures where diffusion current is the dominant current. Excess low-frequency noise measurements made as a function of detector reverse bias indicate 1/f noise may result primarily from the dominant current mechanism at each particular bias. The 1/f noise was not a direct function of the applied bias.