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51.
B. Dagens A. Martinez D. Make O. Le Gouezigou J.-G. Provost V. Sallet K. Merghem J.-C. Harmand A. Ramdane B. Thedrez 《Photonics Technology Letters, IEEE》2005,17(5):971-973
Among the new semiconductor materials for telecom devices, the GaInNAs-GaAs structure presents interesting properties for low-cost applications, like high differential gain and high T/sub 0/. Another key aspect of the performance is the behavior of the GaInNAs-GaAs based lasers under high bit rate direct modulation. Here, we demonstrate the dynamic capabilities of GaInNAs-GaAs three-quantum-well ridge structure through 2.5-Gb/s directly modulated laser emission and transmission on standard fiber, in the temperature range 25/spl deg/C-85/spl deg/C. Besides transmission is demonstrated up to 10 Gb/s at 25/spl deg/C on the same fiber, without penalty and bit-error-rate floor. 相似文献
52.
In this paper we consider two performance modelling techniques from the perspectives of model construction, generation of
an underlying continuous time Markov process, and the potential for reduction in the Markov process. Such careful comparison
of modelling techniques allows us to appreciate the strengths and weaknesses of different approaches, and facilitates cross-fertilization
between them. In the present case we take a characteristic of one formalism, functional rates in Stochastic Automata Networks,
and introduce it to the other formalism, Performance Evaluation Process Algebra. We investigate the benefits of this cross-fertilization,
particularly from the perspectives of Markov process generation and reduction. 相似文献
53.
Moselund K.E. Bouvet D. Tschuor L. Pott V. Dainesi P. Eggimann C. Le Thomas N. Houdre R. Ionescu A.M. 《Nanotechnology, IEEE Transactions on》2007,6(1):118-125
In this work we present a bulk silicon technology platform able to cointegrate gate-all-around (GAA) MOSFETs and local SOI waveguides with pentagonal cross section. Wire diagonals of 100-800 nm are obtained using a lithographic resolution of 0.8 mum. Well-functioning triangular multigate MOSFETs are reported, and tested up to 150 degC. A significant increase is observed in the low-field mobility mu0 for small devices (Weffles500 nm), which is attributed to local volume inversion in the corners. Preliminary characterization of the optical waveguides is carried out, showing optical losses of a few dB/cm. The processing is entirely CMOS compatible, does not require access to advanced lithography equipment, and is based on a silicon bulk substrate. Thus, this technology might serve as the basis for a low-cost, high-performance optical signaling platform 相似文献
54.
In Part I of this paper, a theoretical basis is presented using a two-degrees-of-freedom model. In this second part of the study, the passive control and the two types of semiactive controls introduced in Part I are examined numerically for a taut cable experiencing wind-induced galloping motion. The passive and the semiactive control schemes for taut cables show a good similarity with the results obtained for the two-degrees-of-freedom model. The potential of using these control schemes in practical applications to flexible structures is demonstrated. 相似文献
55.
Zukerman M. Wong E.W.M. Rosberg Z. Gyu Myoung Lee Hai Le Vu 《Communications Letters, IEEE》2004,8(2):116-118
We provide teletraffic models for loss probability evaluation of optical burst switching (OBS). We show that the popular Engset formula is not exact for OBS modeling and demonstrate that in certain cases it is not appropriate. A new exact model is provided. The various models are compared using numerical results for various OBS alternatives with and without burst segmentation. 相似文献
56.
本文介绍了离子束混合工艺方法。与直接注入相比较,离子束混合所使用的设备造价低1/4—1/2,而生产效率可提高1—2个数量级,因而使生产成本大幅度降低,这无疑对离子束工艺的实际应用将产生巨大的促进作用。 通过对轴承材料(GCr15和Cr4Mo4V)经Cr、N、Ta不同元素的混合处理后,在0.5M H_2SO_4和0.1M NaCl的缓冲溶液中的阳极极化曲线表明经混合处理后的两种材料试样,其抗蚀能力和抗点蚀能力均大大提高,这与直接注入的试样效果是一致的。 通过俄歇谱仪和透射电镜的分析结果表明混合是成功的,且在一定的条件下,形成非晶组织。 本文的结论是,无论是离子的直接注入还是离子束混合,对提高轴承材料的抗腐蚀性能都是有效的方法,特别是离子束混合技术具有更大的应用前景。 相似文献
57.
Chawki M.J. Auffret R. Le Coquil E. Pottier P. Berthou L. Paciullo H. Le Bihan J. 《Lightwave Technology, Journal of》1992,10(10):1388-1397
Characteristics of a two-electrode DFB laser filter are studied both theoretically and experimentally. Using a matrix analysis of spontaneous emission, a continuous tuning range of 6.7 Å is achieved by changing both net field gains of the two electrodes. A total discontinuous tuning range of over 10 nm comprising alternating mode jumps and continuous tuning range of 4 Å are measured experimentally. The laser filter presents a FWHM bandwidth of 5 GHz which depends on the optical input power. In addition, it is demonstrated that a DFB laser filter can act as a frequency discriminator/photodetector, i.e., a narrow-band FM receiver, with a uniform bandwidth of 1.5 GHz. Using the two-electrode DFB laser for both transmitter and receiver, a two-channel FSK-WDM transmission system utilizing the discontinuous tuning range is reported. The advantage of such a device is the simplicity as compared to the heterodyne technique 相似文献
58.
59.
J Valla A Leguerrier H Corbineau B Sevray T Langanay H Le Couls M Sellin C Rioux Y Logeais 《Canadian Metallurgical Quarterly》1995,49(9):816-823
From 1978 to 1992, 121 cases of postinfarction left ventricular aneurysm (99 males, 22 females, mean age 60 years) were operated on. The authors insist on a high rate of clinical arhythmogenicity (31.4%) and associated mechanical complications (21%). 76% of patients were in functional NYHA class III or IV. Resection was performed in 90% of patients, plication in 10%. 58% underwent coronary artery bypass grafting (1.7 graft/patient), 16% encircling ventriculotomy, 8% mitral valve replacement and 13% closure of ventricular septal defect. Operative mortality was 14.9% (10% when other mechanical complications where excluded). 5-year survival is 67.9%. Late cardiac deaths are as follow: left ventricular failure (1.8% A/P), Sudden death (1.4% A/P), Myocardial infarction (0.6% A/P). 82% of survivals are in functional NYHA class I or II. Only functional class NYHA III or IV is predictive of late death. We conclude that postinfarction left ventricular aneurysm remains a high risk complication especially when associated with other mechanical complications. When arhythmogenicity is present we suggest rhythmologic surgery and in all cases, complete revascularization. 相似文献
60.