Boosting nitrification by membrane-attached biofilm.

Nitrification is a key step for reliable biological nitrogen removal. In order to enhance nitrification in the activated sludge (AS) process, membrane-attached biofilm (MAB) was incorporated in a conventional activated sludge tank. Simultaneous organic carbon removal and nitrification of the MAB incorporated activated sludge (AS + MAB) process was investigated with continuous wastewater treatment. The effluent TOC concentration of AS and the AS + MAB processes were about 6.3 mg/L and 7.9 mg/L, respectively. The TOC removal efficiency of both AS and AS + MAB were above 95% during the wastewater treatment, indicating excellent organic carbon removal performance in both processes. Little nitrification occurred in the AS process. On the contrary, successful nitrification was obtained with the AS + MAB process with nitrification efficiency of about 90%. The volumetric and surface nitrification rates were about 0.14 g/Ld and 6.5 g/m2d, respectively. The results clearly demonstrated that nitrification in the conventional AS process was boosted by MAB. Furthermore, the microfaunal population in the AS + MAB process was different from that in the AS process. The high concentration of rotifers in the AS + MAB process was expected to decrease the generation of excess sludge in the process.     

Effect of grain boundaries on isothermal solidification during transient liquid phase brazing

The influence of liquid penetration at grain boundary regions on the rate of advance of the solid-liquid interface during isothermal solidification of transient liquid phase (TLP) brazed nickel joints has been examined. The test samples used in this study were Ohno-cast nickel with a grain size of >4 mm and a fine-grained nickel with a grain size of around 40 μm. Both Ni-base materials had the same chemical composition. The rate of isothermal solidification was greater when fine-grained nickel was employed during TLP brazing using Ni-11 wt pct P filler metal at 1200 °C. Liquid penetration at grain boundaries accelerates the isothermal solidification process by increasing the effective solid-liquid interfacial area and increasing the rate of solute diffusion into the base material. An analysis of electron channeling patterns has confirmed that random high-angle boundaries have a greater influence on the rate of isothermal solidification than ordered boundaries including small-angle or twin boundaries. Formerly Visiting Scientist, Department of Metallurgy and Materials Science, University of Toronto. Formerly Postdoctoral Fellow, Department of Metallurgy and Materials Science, University of Toronto     

Thermoelectric properties of BiSb alloys

Bismuth is a semimetal that has a relatively low lattice thermal conductivity. A positive energy gap can be created by alloying with antimony, leading to useful alloys for thermoelectric energy conversion. This paper gives an insight into the basic properties of BiSb alloys for thermoelectric applications.     

Optimal morphological pattern restoration from noisy binary images

A theoretical analysis of morphological filters for the optimal restoration of noisy binary images is presented. The problem is formulated in a general form, and an optimal solution is obtained by using fundamental tools from mathematical morphology and decision theory. Consideration is given to the set-difference distance function as a measure of comparison between images. This function is used to introduce the mean-difference function as a quantitative measure of the degree of geometrical and topological distortion introduced by morphological filtering. It is proved that the class of alternating sequential filters is a set of parametric, smoothing morphological filters that best preserve the crucial structure of input images in the least-mean-difference sense     

Minimizing power dissipation in optical interconnects at low voltage using optimal modulator design

A strong motivation for insertion of optical interconnects in short-distance applications such as chip-to-chip or back-plane communication, apart from high bit rates, is their potential to achieve these bit rates at low power compared to the currently prevalent copper based interconnects. Thus, it is imperative to construct design methodologies which minimize the total optical link power dissipation. We present one such methodology, where we optimize the quantum-well modulators to minimize the power dissipation in modulator-based optical interconnects. In the first part of the paper, the focus is on obtaining the optimal modulator metrics [contrast ration (CR) and insertion loss], which yield the lowest total power (receiver and the modulator). The trends are studied as a function of the input laser power and bit rate. Having obtained the desirable modulator metrics and the corresponding power dissipation, in the second part, the focus is on the feasibility of these metrics in the light of voltage swing constraints. The biggest concern with the modulator based optical link is the low CR, especially at low voltage swing. While studying these concerns, we also provide insight into the physical design of the modulator including, its intrinsic region thickness, pre-bias voltage, and the size and the number of quantum-wells. Specifically, we outline the method to obtain the design parameters, which allows minimum power dissipation with the least laser power. This ultimately yields higher aggregate I/O bandwidth for chip to chip communication in power limited chips.     

Investigation of the source/drain asymmetric effects due to gate misalignment in planar double-gate MOSFETs

A planar double-gate SOI MOSFET (DG-SOI) with thin channel and thick source/drain (S/D) was successfully fabricated. Using both experimental data and simulation results, the S/D asymmetric effect induced by gate misalignment was studied. For a misaligned DG-SOI, there is gate nonoverlapped region on one side and extra gate overlapped region on the other side. The nonoverlapped region introduces extra series resistance and weakly controlled channel, while the extra overlapped region introduces additional overlap capacitance and gate leakage current. We compared two cases: bottom gate shift to source side (DG/spl I.bar/S) and bottom gate shift to drain side (DG/spl I.bar/D). At the same gate misalignment value, DG/spl I.bar/S resulted in a larger drain-induced barrier lowering effect and smaller overlap capacitance at drain side than DG/spl I.bar/D. Because of reduced drain-side capacitance, the speed of three-stage ring oscillator of DG/spl I.bar/S, with 20% gate misalignment length (L/sub mis/) over gate length (L/sub g/), or L/sub mis//L/sub g/=20%, was faster than that of two-gate aligned DG-SOI.     

Algebraic decoding of (103, 52, 19) and (113, 57, 15) quadratic residue codes

In this paper, two algebraic decoders for the (103, 52, 19) and (113, 57, 15) quadratic residue codes, which have lengths greater than 100, are presented. The results have been verified by software simulation that programs in C++ language have been executed to check possible error patterns of both quadratic residue codes.     

The U.S. role in global internet governance

Who should control the Internet? A dozen years after the Internet became a mass medium, this issue has continued to grow in urgency, becoming white hot in fall 2005. At the September 2005 preparatory meeting for the UN World Summit on the Information Society (WSIS), a coalition of countries criticized the United States' unilateral control of the Internet's domain name system (DNS) and proposed the establishment of a multinational Council to supervise it. This proposal emerged from the Final Report of the UN Working Group on Internet Governance. Researchers from the Internet Governance Project, a university-based consortium for policy analysis, have concluded that the United States should internationalize governance of the Internet, but in a way that avoids intrusive, centralized control.