氧化铝/锌合金复合材料界面的SEM观察

利用挤压铸造制备氧化铝／锌合金复合材料，在扫描电镜（ＳＥＭ）上观察复合材料的界面。结果表明，在复合材料中纤维与基体间存在致密界面层，合金元素通过适当的化学反应可改善纤维与基体间的结合；在凝固过程中，纤维／基体界面上的硅在共晶体的共生生长过程中起了领先相作用，导致复合材料的共晶转变是由铝硅共晶转变和锌铝共晶转变两者组成。     

A new space-vector-modulated control for a unidirectionalthree-phase switch-mode rectifier

A unidirectional three-phase switch-mode rectifier that delivers sinusoidal input currents in phase with the corresponding input phase voltages is proposed and analyzed in this paper. In the proposed topology, three AC switches are placed before the bridge rectifier and, respectively, across two power lines. A simple control scheme combing space-vector modulation and hysteresis current control is presented. Sinusoidal input line currents are observed in experimental results     

逻辑程序的一种并行执行模型

本文基于静态相关性分析和动态调整相结合的方法，提出了一种逻辑程序的执行模型，它不仅开发了“与“并行，同进也开发了一定的“或“并行，从而有效地加速了逻辑程序的执行。     

An analytical grain-barrier height model and its characterizationfor intrinsic poly-Si thin-film transistor

An analytical model for the grain-barrier height of the intrinsic poly-Si thin-film transistors (TFTs) is developed, in which the grain-barrier height for the applied gate voltage smaller than the threshold voltage is obtained by solving the charge neutrality equation and the grain-barrier height for the applied gate voltage larger than the threshold voltage is obtained by using the quasi-two-dimensional (2-D) method. Good agreements between experimental and simulation results are obtained for a wide gate voltage range     

Novel technique for SiO2 formed by liquid-phasedeposition for low-temperature processed polysilicon TFT

A technique for SiO₂ formation by liquid-phase deposition (LPD) at nearly room temperature for low-temperature processed (LTP) polysilicon thin-film transistor (poly-Si TFT) was developed. LPD SiO₂ film with a lower P-etch rate shows a dense structure. LPD SiO₂ also exhibits good electrical characteristics. LTP poly-Si thin-film transistors (TFTs) with LPD SiO ₂ as the gate insulator have been fabricated and investigated. Their characteristics indicate performance adequate for their use as pixel transistors in liquid crystal displays (LCDs)     

Comparison of Displacement and Mixing Diffusers

In order to cumpare the peformance of different supply diffuers of ventilation air, the airflow passern, temperature stratifiation and contaminant dispersion in a furnitured office ventilated by three kinds of air diffuer were numerically investigated. The air diffuers studied in this paper are a quarter-cylinder displacement diffuer on the floor and mixing diffuers (linear and vortex diffuers) on the ceiling. The heat sources in the of-fice are considered to be 50% convective and 50% radiative. The k-? two-equatwn model of turbulence is employed to predict the turbulent diffusion. The results show that the displacement diffuser provides a rather uniform flow field with low velocify in most areas, and the vertical temperature difference from floor to ceiling is as high as 6 K. With the linear diffuser, the air velociry is high, and the temperature is uniform both horizontally and vertically. The air velocity generated by the vortex diffuser is moderate. The distributions of the temperature and the contaminant are rather uniform.     

最佳基数排序

基数排序由于其效率高而被广泛应用。通常,基数排序所用的基数是10,然而,如果求得一个基数r_(best),并且用r_(best)为基数进行基数排序使排序时间达到最小,则这将具有非常重要的意义。本文给出了求r_(best)的方法,分析了以r_(best)为基数进行基数排序的时间复杂度,提出了进一步提高效率的措施,并将以r_(best)为基数的基数排序速度与以10为基数的基数排序进行了比较。     

Multidimensional augmented current equation including velocityovershoot

The augmented drift-diffusion current equation, which includes velocity overshoot effects through the space derivatives of the electric field, cannot be directly extended beyond one dimension. A new formalism is developed which considers the carrier heating and the distribution relaxation effects to obtain a multidimensional augmented drift diffusion current equation. The equivalent mobility containing the velocity overshoot correction is derived from the perturbation analysis on the carrier temperature using the energy balance equation. The issues related to the numerical implementation of this generalized model and the validity of the assumptions are also discussed     

Biochemical basis for increased susceptibility to Cidofovir of herpes simplex viruses with altered or deficient thymidine kinase activity

It has been observed that herpes simplex virus mutants with deficient or altered thymidine kinase activity are more susceptible to Cidofovir (CDV; 1-[(S)-3-hydroxy-2-(phosphonomethoxy)propyl]cytosine dihydrate) in tissue culture than are the parental strains. During infection of cells, the elevation of the dCTP pool by thymidine kinase mutant viruses is less than that induced by the wild-type virus. The competition between CDV diphosphate and dCTP at the viral polymerase is therefore changed in favor of CDV diphosphate, enhancing its activity.