Recovery of magnetic ionic liquid [bmim]FeCl<Subscript>4</Subscript> using electromagnet

Recovery of 1-butyl-3-methylimidazolium tetrachloroferrate ([bmim]FeCl₄) from its mixture with water was investigated. The [bmim]FeCl₄ rich phase in the mixture forming two-phase was successfully separated, while homogeneous mixtures could not be separated. However, the concentration of the homogeneous mixture varied as a function of the magnetic field strength. Therefore, a combination of magnetic field and conventional methods to recover magnetic ILs from reaction mixtures will be very useful and have great potential.     

Design of small-area and high-efficiency DC-DC converter for 1 T SRAM

The direct current-direct current (DC-DC) converter is designed for 1 T static random access memory (SRAM) used in display driver integrated circuits (ICs), which consists of positive word-line voltage (V _PWL), negative word-line voltage (V _NWL) and half-V _DD voltage (V _HDD) generator. To generate a process voltage temperature (PVT)-insensitive V _PWL and V _NWL, a set of circuits were proposed to generate reference voltages using bandgap reference current generators for respective voltage level detectors. Also, a V _PWL regulator and a V _NWL charge pump were proposed for a small-area and low-power design. The proposed V _PWL regulator can provide a large driving current with a small area since it regulates an input voltage (VCI) from 2.5 to 3.3 V. The V _NWL charge pump can be implemented as a high-efficiency circuit with a small area and low power since it can transfer pumped charges to V _NWL node entirely. The DC-DC converter for 1 T SRAM were designed with 0.11 μm mixed signal process and operated well with satisfactory measurement results.     

浅析小电流接地系统暂态选线新方法

文章介绍了国内小电流接地系统故障选线方法的的发展简况,在分析小电流接地故障暂态特征的基础上对近几年提出的几种较新的基于暂态特征信息的选线方法进行了简单的评述,同时筒略说明了不足之处.文章最后提出了一种基于暂态能量函数的小电流接地选线方法,并有待于进一步研究.     

Quaternary Ammonium Salts (QAS) Modified Polysiloxane Biocide Supported on Silica Materials

Three types of silica particles modified with vinyl groups were obtained: (i) xerogel formed by hydrolytic polycondensation of the mixture of tetramethoxysilane (TMOS) and 1,1,1,7−tetramethoxy-3,5,7-trimethyl-3,5,7-trivinyltetrasiloxane, (ii) mesoporous silica obtained from the same precursors in the presence of the cetyltrimethylammonium bromide (CTAB), and (iii) commercial Fluka silica gel 60A with a vinyltriethoxysilane-treated surface. Vinyl groups on these silica materials were transformed into silyl chloride by hydrosilylation with HMe₂SiCl. These groups were used to graft living polysiloxane that was synthesized by anionic ring-opening polymerization of 2,4,6-tri(3-chloropropyl)-2,4,6-trimethylcyclotrisiloxane and initiated by BuLi. Chloropropyl groups on the grafted polymer were used to quaternize N,N-dimethyl-n-octylamine. Silica particles with grafted polysiloxane having quaternary ammonium salt (QAS) groups pendant to polymer chains were obtained. Silica material with QAS groups directly attached to the surface were generated by the action of N,N-dimethyl-n-octylamine on particles obtained by the sol–gel process involving tetraethoxysilane (TEOS) with 3-chloropropyltriethoxysilane. The bacteriocidal properties of all these materials were tested in water suspension against five representative strains for Gram-positive and Gram-negative bacteria. Some of the silica–polysiloxane hybrid materials have good antibacterial properties against Gram-positive strains, but not as good as the non-tethered QAS-substituted polysiloxane in water solution. The QAS groups that are directly bonded to the silica material surface are inactive.     

Unconventional Field Dependence of Magnetoresistance of (TMTSF)2ClO4 Studied by 46-T Pulsed Magnetic Field System

A new TTP donor, Me-DH-TTP (2-methyl-5-(1,3-dithiolan-2-yliden)-1,3,4,6-tetrathiapentalene), was designed to realize a system with large on-site Coulomb repulsion as compared with the previously known bis-fused type TTP donors. Probably as a consequence, (Me-DH-TTP)₂AsF₆ exhibits semiconducting behavior from room temperature to liquid helium temperature. By increasing pressure, metallic behavior appears below 300 K, and with distinct metal-insulator (M-I) transition up to 2.2 GPa. This M-I transition suddenly disappears beyond 2.5 GPa, and metallic state is stabilized down to 2.6 K. We discuss the possibility of quantum critical point around 2.4 GPa.     

Impedance spectroscopy study and electrical behavior of PMN-PZT actuators joined by ceramic slurry

The solid solution of Pb(Mg,Nb)O₃-Pb(Zr,TiO) O₃ materials have high piezoelectric constant of 600 ∼650 pC/N and electromechanical coupling coefficient k _p of 0.65. Due to such high piezoelectric constant and electromechanical coupling coefficient, Pb(Mg,Nb)O₃-Pb(Zr,TiO)O₃ materials have been attracted attentions for the applications of multilayer ceramic actuators. Actuators can be produced by staking piezoelectric ceramic materials and inner electrodes, alternatively. However, it is difficult to fabricate huge ceramic actuators without any serious problems during the process conditions. Because ceramic are easily cracked during the sintering process, due to strikingly different shrinkage rate between the ceramic materials and metal electrodes. In this research, new jointing methods will be proposed for huge ceramic actuators, and then their electrical properties were investigated. Time dependent leakage current and impedance spectroscopy were employed to expect device performances.     

类似级配沥青混合料最佳油石比关系研究

利用压实热拌沥青混合料的空隙率和矿料间隙率等体积特性，考虑集料吸收沥青的情况，提出了“有效油石体积比”的概念，依据最佳有效油石体积比，分析研究了同类级配矿料的最佳油石比之间的关系，建立了具有普遍意义的关系式，并与新的公路沥青路面施工技术规范提供的预估公式作了比较.     

Selective wet etching of p-GaN for efficient GaN-based light-emitting diodes

The selective wet etching of a p-GaN layer by using a solution of KOH in ethylene glycol (KE) was studied to enhance the optical and electrical performance of the GaN-based light-emitting diodes (LEDs). The surface of the p-GaN, which was selectively etched in the KE solution, showed hexagonal-shaped etch pits. The light-output power of etched LEDs was improved by 29.4% compared to that of the nonetched LED. This improvement was attributed to the increase in the probability of photons to escape due to the increased surface area of textured surface and the reduction in contact resistance of the ohmic layer resulting from the increased contact area and hole concentration on the textured p-GaN. The reverse leakage current of the LED was also greatly decreased due to the surface passivation and the removal of defective regions from the p-GaN.