APT（STLRI）—1.78型单模光纤（缆）连接器简介

利用引进的制造技术和设备,制作出了 APT(STLRI)—1.78型系列化光纤连接器。     

Solution of Helmholtz equation by Trefftz method

The application of the Trefftz method for calculating wave forces on offshore structures is presented. Indirect and direct formulations using complete and non-singular systems of Trefftz functions for the Helmholtz equation are posed in this paper. An effective technique using different interpolation functions for the velocity potential and wave force are suggested to improve the computational accuracy of the wave force. The numerical examples show that the present method is highly efficient and accurate.     

Ionothermal synthesis of a three-dimensional zinc phosphate with DFT topology using unstable deep-eutectic solvent as template-delivery agent

A three-dimensional zinc phosphate compound with DFT topology, designated as ZnPO₄-EU1, has been synthesized by an ionothermal approach from the system HF-ZnO–P₂O₅-choline chloride-imidazolidone. Ethylenediamine, derived from decomposition of the imidazolidone component of the deep-eutectic solvent (DES) itself, is delivered to the synthesis and serves as an appropriate template for ZnPO₄-EU1. Experiments in which the synthesis conditions were varied showed that ZnPO₄-EU1 may be prepared over a wide molar ratio of P/Zn = 0.55–13.0. Powder X-ray diffraction patterns have been obtained at intervals to track the crystallization process of this material. The experimental data show that Zn₃(PO₄)₂ · 4H₂O (a dense phase) was first isolated from the DES after reaction for 1 h. Subsequently, the pure phase of ZnPO₄-EU1 was obtained with increasing crystallization time from 12 h to 72 h. The experimental results show that the nucleation and crystallization take place with relatively low levels of solvent degradation, demonstrating that zinc phosphate with a three-dimensional framework can be synthesized by in situ generation of an appropriate template using an unstable DES at high temperatures (150–200 °C).     

Polyetherimide substrates for future high density optical data storage

Polyetherimide (PEI) substrate for next‐generation high density optical data storage is fabricated and characterized. Cover‐layer incident or first‐surface recording configurations do not require optical properties of the substrate, which are the prerequisite conditions for the conventional material of polycarbonate (PC). Instead of the optical properties, good mechanical properties with a sufficient transcribability are required. Even though PEI has higher glass transition temperature than that of PC, a microscopic transcribability of PEI is comparable with PC by laminating a thermal insulation layer on the backside of a stamper to retard the heat flow. A macroscopic warpage of PEI substrate is smaller than that of PC substrates, which reduces tilt and servo burden. The lowest critical speed coupled with the flutter of PEI substrate is larger than that of PC substrate because of the mechanical properties of PEI. POLYM. ENG. SCI., 48:97–101, 2008. © 2007 Society of Plastics Engineers     

Effect of Thickness of the p-AlGaN Electron Blocking Layer on the Improvement of ESD Characteristics in GaN-Based LEDs

The following letter presents a study regarding GaN-based light-emitting diodes (LEDs) with p-type AlGaN electron blocking layers (EBLs) of different thicknesses. The study revealed that the LEDs could endure higher electrostatic discharge (ESD) levels as the thickness of the AlGaN EBL increased. The observed improvement in the ESD endurance ability could be attributed to the fact that the thickened p-AlGaN EBL may partly fill the dislocation-related pits that occur on the surface of the InGaN-GaN multiple-quantum well (MQW) and that are due to the strain and the low-temperature-growth process. If these dislocation-related pits are not partly suppressed, they will eventually result in numerous surface pits associated with threading dislocations that intersect the InGaN-GaN (MQW), thereby reducing the ESD endurance ability. The results of the experiment show that the ESD endurance voltages could increase from 1500 to 6000 V when the thickness of the p-AlGaN EBL in the GaN LEDs is increased from 32.5 to 130 nm, while the forward voltages and light output powers remained almost the same.     

Automating application software generation

Many approaches have been proposed to enhance software productivity and reliability. These approaches typically fall into three categories: the engineering approach, the formal approach and the knowledge-based approach. But the optimal gain in software productivity cannot be obtained if one relies on only one of these approaches. This paper describes the work in knowledge-based software engineering conducted by the authors for the past 10 years. The final goal of the research is to develop a paradigm for software engineering which integrates the three approaches mentioned above. A knowledge-based tool which can support the whole process of software development is provided in this paper.     

An experiment for showing some kind of artificial understanding

In this paper we design an experiment which can be depicted as a simple scenario, a very limited 'world'. In this world, there are an actor that can pursue a project and an observer that is keeping its eyes on the actor. We try to show in the experiment that the observer can to some degree understand the actor based on its knowledge and some metaphors, i.e. understand what the actor is doing and why. As the conclusion of this experiment, we try to show some features of 'understanding'. These are (1) that 'understanding' has to be based on some preliminary knowledge; (2) that 'understanding' is a process of incremental learning; (3) that, as for symbolic systems, some metaphors are necessary for mapping real entities into concepts in mind.