电子材料分析中的能谱干扰峰

主要阐述了在电子元器件分析中用能谱仪作定性分析时常见的一些干扰峰和容易混淆及误判的一些谱峰。主要有和峰、逃逸峰以及一些在元器件材料分析中常遇到的元素特征峰之间的交错重叠的识别和判定方法，并把这些容易误判的谱线整理列成3种表格，以供参考，这些数据基本覆盖了在X射线能谱仪中可能出现的所有相关的谱峰。     

Gettering by heat thermal processing: application in crystalline silicon solar cells

The aim of this work is to getter unwanted impurities from solar grade crystalline silicon (Si) wafers and then to enhance their electronic properties. This was done by forming a sacrificial porous silicon (PS) layer on both sides of the Si wafers and by performing infrared (IR) thermal annealing treatments (at around 950 °C) in a SiCl₄/N₂ controlled atmosphere. The process allows concentrating unwanted impurities in the PS layer and near the PS/silicon interface. These treatments reduce the resistivity by about two orders of magnitude at a depth of about 40 μm and improve the minority carrier diffusion length from 75 to 210 μm. This gettering method was also tested on silicon wafers where grooved fingers and back contacts were achieved using a chemical vapor etching (CVE) method. Front buried metallic contacts and small holes for local back surface field were then achieved after the gettering stage in order to realize silicon solar cells. It was shown that the photovoltaic parameters of gettered silicon solar cells were improved as regard to ungettered ones.     

Nonlinearity in power-current Characteristics of narrow-pulse-driven AlGaInP laser diodes

In this paper, a simple yet effective model is developed to analyze the nonlinearity in power-current characteristics, also known as "kinks", observed in AlGaInP selectively-buried-ridge (SBR) laser diodes driven by narrow pulses (/spl sim/10/sup -7/s). The model takes the temperature-induced waveguide as well as the carrier distribution into account, and the simulation results show good agreement with the experiments. The main factors influencing the kink behavior of SBR lasers are investigated based on this model, and it is believed to be of great help for the optimization AlGaInP laser structure for high-power applications.     

The Impact of Infostation Density on Vehicular Data Dissemination

Vehicle-to-Vehicle and Vehicle-to-Roadside communications are going to become an indispensable part of the modern day automotive experience. For people on the move, vehicular networks can provide critical network connectivity and access to real-time information. Infostations play a vital role in these networks by acting as gateways to the Internet and by extending network connectivity. In this context, an important question is “What is the minimum number of infostations that need to be deployed in an area in order to support vehicular applications?” Optimizing infostation density is vital to understanding and reducing the cost of deployment and management. In this paper, we examine the required infostation density in a highway scenario using different data dissemination models. We start from a simple analysis that captures the required density under idealized assumptions. These models are validated by an event-driven simulator. We then run detailed QualNet simulations on both controlled and realistic vehicular traces to observe the information density trends in practical environments, and consequently propose techniques to improve dissemination performance and reduce the required infostation density.     

Investigations on mode-division multiplexed free-space optical transmission for inter-satellite communication link

Wireless Networks - Inter-satellite data transmission links are very crucial for providing global inter-connectivity. We report designing and investigations on high date rate inter-satellite...     

构建一种新型综合性课程的探索

本文针对现有课程设置过程中,课时和知识内容之间的矛盾,借鉴现有综合课程设计的研究成果,提出以实践内容为主体构建综合性课程的方式解决课时安排的矛盾.具体构建方式是以实践类综合设计为平台,在课程中加入新的理论知识,即要求学生在实践中自学理论知识.本文提出的构建方式具有很强的实用性,对于现有教学中存在的一些问题具有很好的指导...     

InP衬底上InAlAs异变缓冲层和高铟组分InGaAs的生长温度优化

利用气态源分子束外延技术在InP衬底上生长了包含InAlAs异变缓冲层的In0.83Ga0.17As外延层.使用不同生长温度方案生长的高铟InGaAs和InAlAs异变缓冲层的特性分别通过高分辨X射线衍射倒易空间图、原子力显微镜、光致发光和霍尔等测量手段进行了表征.结果表明, InAlAs异变缓冲层的生长温度越低, X射线衍射倒易空间图 (004) 反射面沿Qx方向的衍射峰半峰宽就越宽, 外延层和衬底之间的倾角就越大, 同时样品表面粗糙度越高.这意味着材料的缺陷增加, 弛豫不充分.对于生长在具有相同生长温度的InAlAs异变缓冲层上的In0.83Ga0.17As外延层, 采用较高的生长温度时, X射线衍射倒易空间图 (004) 反射面沿Qx方向的衍射峰半峰宽较小, 77K下有更强的光致发光, 但是表面粗糙度会有所增加.这说明生长温度提高后, 材料中的缺陷得到抑制.     

Node cooperation in hybrid ad hoc networks

A hybrid ad hoc network is a structure-based network that is extended using multihop communications. Indeed, in this kind of network, the existence of a communication link between the mobile station and the base station is not required: A mobile station that has no direct connection with a base station can use other mobile stations as relays. Compared with conventional (single-hop) structure-based networks, this new generation can lead to a better use of the available spectrum and to a reduction of infrastructure costs. However, these benefits would vanish if the mobile nodes did not properly cooperate and forward packets for other nodes. In this paper, we propose a charging and rewarding scheme to encourage the most fundamental operation, namely packet forwarding. We use "MAC layering" to reduce the space overhead in the packets and a stream cipher encryption mechanism to provide "implicit. authentication" of the nodes involved in the communication. We analyze the robustness of our protocols against rational and malicious attacks. We show that-using our solution-collaboration is rational for selfish nodes. We also show that our protocols thwart rational attacks and detect malicious attacks.     

Large‐Scale Growth of Two‐Dimensional SnS2 Crystals Driven by Screw Dislocations and Application to Photodetectors

2D SnS₂ crystals are attracting increasing attention owning to the huge potential for electronic and optoelectronic applications. However, batch production of 2D SnS₂ crystals via a simple vapor process remains challenging by far. Moreover, the growth mechanism for vapor growth of 2D SnS₂ is not well documented as well. Herein, a simple approach is presented for preparation of large‐scale 2D SnS₂ crystals on mica sheets and it is demonstrated that these 2D crystals follow a screw‐dislocation‐driven (SDD) spiral growth process. The synthesized 2D crystals show hexagonal and truncated triangular shapes with the lateral size ranging from a few micrometers to dozens of micrometers. Observations of key features for screw dislocations, such as helical fringes, dislocation hillocks, and herringbone contours, solidly confirm the SDD spiral growth behavior of the SnS₂. Possible mechanism is proposed in this work to show the generation and propagation of screw dislocations. Furthermore, in order to explore the optoelectronic property of the SnS₂, photodetectors based on 2D SnS₂ crystals are fabricated. The resulting device shows excellent operating characteristics, including good photo‐stability and reproducibility as well as a fast photoresponse time (≈42 ms), which enable the SnS₂ a promising candidate for photodetectors.