Wavelength and repetition rate tunable optical pulse source using a chirped fiber Bragg grating and a nonlinear optical loop mirror

We experimentally demonstrate a simple and novel scheme for tunable real-repetition-rate multiplication, based on the combined use of fractional Talbot effect in a linearly tunable chirped fiber Bragg grating (FBG) and cross-phase modulation (XPM) effect in a nonlinear optical loop mirror (NOLM). By tuning the group-velocity dispersion of the chirped FBG fabricated with the S-bending method using a uniform FBG, we obtain high quality pulses at pseudorepetition rates of 20/spl sim/50 GHz from an original 8.5-ps 10-GHz soliton pulse train. We subsequently convert this pseudorate multiplication into a real-rate multiplication using XPM effect in an NOLM. A wavelength tuning is also achieved over a /spl sim/15-nm range.     

部分耗尽SOI体接触nMOS器件的关态击穿特性

分别采用具有硅化物和不具有硅化物的SOI工艺制成了部分耗尽SOI体接触nMOS晶体管.在体接触浮空和接地的条件下测量了器件的关态击穿特性.通过使用二维工艺器件模拟,并测量漏体结的击穿特性,详细讨论和分析了所制成器件击穿特性的差异和击穿机制.在此基础上,提出了一个提高PD-SOI体接触nMOS击穿特性的方法.     

全耗尽SOI MOSFETs阈值电压解析模型

提出了一种新的全耗尽SOI MOSFETs阈值电压二维解析模型.通过求解二维泊松方程得到器件有源层的二维电势分布函数,氧化层-硅界面处的电势最小值用于监测SOI MOSFETs的阈值电压.通过对不同栅长、栅氧厚度、硅膜厚度和沟道掺杂浓度的SOI MOSFETs的MEDICI模拟结果的比较,验证了该模型,并取得了很好的一致性.     

微机械可调谐垂直腔面发射激光器调谐范围分析与设计

介绍了可调谐激光器的意义和它的基本调谐方法及调谐原理.对影响微机械可调谐垂直腔面发射激光器调谐范围的因素做了重点分析,计算了空气隙的最大变化范围和由此引起的激射波长的调谐范围.     

Optical signal routing using emission packet positioning of semiconductor heterostructure

We present a novel optical switching technique utilizing emission packet positioning of semiconductor heterostructure. A modulation-doped p-AlGaAs-GaAs heterostructure is employed to control spontaneous emission packet positioning with electric fields. Emission packets generated by optical input signals are brought over 150 /spl mu/m with electric fields, so the output fibers can detect the emission intensity as signals. The first-order analysis indicates that the drift velocity of minority electrons in GaAs limits the detectable maximum data rate and nanoseconds timescale signal routing operation at 20 Gb/s is possible at an electron drift velocity of 2/spl times/10/sup 7/ cm/s.     

Research activities on next-generation mobile communications and services in Korea

In this article we present a perspective on next-generation mobile communications and services. As a preliminary research work on next-generation mobile communications, we exploit what next-generation mobile services will be (S. Ryu et al., May 2003). We define next-generation mobile services as a hierarchy of services consisting of three different service levels: the service areas, the service functionalities, and the service technologies. We derive these service levels by means of scenario-based analysis. Next we propose conceptual reference network architecture, focusing on the realization of the service technologies. We divide the network into four different parts: a user equipments and access part, a network service provisioning layer part, a network control layer part, and non-mobile network operator service pan, according to characteristics of information and service flows within a network. In this reference network architecture, service elements such as servers, processors, and gateways are placed in each network part to support the derived next-generation mobile services. Finally, we give a brief introduction of research and development activities for next-generation mobile communication systems and services in Korea.     

Multimode basis selection for spatial multiplexing with limited feedback

Proposed is multimode basis selection in which the active bases are selected at the receiver from the common unitary basis set known at both receiving and transmitting ends, conveyed to the transmitter using limited feedback, and assembled into a precoding matrix at the transmitter. It is shown that the proposed multimode basis selection scheme outperforms both multimode antenna selection and Grassmannian multimode precoding in capacity in correlated fading channels without additional complexity and feedback.     

Reverse short channel effects in high-k gated nMOSFETs

Anomalous threshold voltage roll-up behavior, commonly referred as reverse short channel effect (RSCE), has been observed in high-k (HfO₂ on SiON buffer, Al₂O₃ on SiON buffer) gated submicron nMOSFETs, while the SiO₂ or SiON control samples show normal short channel effect (SCE) behavior. The possible causes such as inhomogeneous channel doping profile and gate oxide thickness variation near S/D ends have been ruled out. The results indicate that interface trap density that dependents on channel length is the main cause of the RSCE observed here. In addition, oxide charge also plays a role.     

一种新的Halo掺杂圆柱围栅MOSFET阈值电压解析模型

通过在圆柱坐标系中精确求解泊松方程,建立了全新的Halo掺杂圆柱围栅MOSFET静电势,电场以及阈值电压的解析模型。与采用抛物线电势近似法得到的解析模型相比,当沟道半径远大于氧化层厚度时,新模型更为精确。模型还考虑了Halo区掺杂浓度、氧化层厚度以及沟道半径对器件阈值电压特性的影响。结果表明,采用中等程度的halo区掺杂浓度、较薄的栅氧化层以及较小的沟道半径可以有效改善器件的阈值电压特性。解析模型与三维数值模拟软件ISE所得结果高度吻合。     

圆弧波导中波长临界曲率半径的精确仿真

以径向步长和角向步长为基本变量,介绍了极坐标有限差分光束传播法(FD-BPM)理论,可提高仿真结果的直观程度与效率.确定了不同波长在单模波导中传输的等效参数,建立了等效传输数值模型,在忽略波导吸收与散射损耗的前提下,应用所提出的FD-BPM对几个典型波长的传输进行了仿真分析,得到不同波长的稳定传输临界波导曲率半径,仿真精度达到100 μm,并确定了不同波长形成稳定导模时.导模能量密度的归一化传输极限值,得到了波长与临界曲率半径关系的变化规律.