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91.
Bing Q. Han Farghalli A. Mohamed Enrique J. Lavernia 《Metallurgical and Materials Transactions A》2003,34(1):71-83
In the present study, the mechanical properties of Fe processed via severe plastic deformation (equal-channel angular pressing (ECAP)) at room temperature were investigated for the first time.
The grain size of annealed Fe, with an initial grain size of about 200 μm, was reduced drastically during ECAP. After eight passes, the grain size reaches 200 to 400 nm, as documented by means of
transmission electron microscopy (TEM). The value of microhardness during pressing increases 3 times over that of the starting
material after the first pass and increases slightly during subsequent pressing for higher-purity Fe. Examination of the value
of microhardness after eight passes as a function of post-ECAP annealing temperature shows a transition from recovery to recrystallization,
an observation that resembles the behavior reported for heavily deformed metals and alloys. The tensile and compression behaviors
were examined. In tension, a drop in the engineering stress-engineering strain curve beyond maximum load was observed both
in the annealed Fe and the ECAP Fe. This drop is related to the neck deformation. The fracture surface, examined by scanning
electron microscopy (SEM), shows vein patterns, which is different from the dimples found on the fracture surface of annealed
Fe. In compression, an initial strain-hardening region followed by a no-strain-hardening region was observed in the ECAP Fe.
The yield strength in tension of the ECAP Fe was observed to be higher than that in compression. The strengthening mechanisms
and softening behavior are discussed. 相似文献
92.
93.
不同粒度松散煤体的氧扩散特性实验研究 总被引:1,自引:0,他引:1
以自行研制的煤对氧扩散特性测试装置为实验手段,在常温环境条件下测试了不同粒度松散煤体对氧的自由扩散特性.实验结果表明:煤样粒度的变化对取气腔氧浓度流出曲线的影响表现出2个极限值,煤样粒度在20~100目之间时,取气腔氧气浓度梯度随煤样粒度的增大而增大;当煤样粒度<20目或>100目时,煤样粒度的再变化对氧浓度流出曲线的影响则微乎其微;取气腔氧浓度曲线流形基本符合指数曲线的变化规律. 相似文献
94.
H. Tsukamoto T.D. Boone J. Han J.M. Woodall 《Photonics Technology Letters, IEEE》2005,17(7):1411-1413
We present a novel optical switching technique utilizing emission packet positioning of semiconductor heterostructure. A modulation-doped p-AlGaAs-GaAs heterostructure is employed to control spontaneous emission packet positioning with electric fields. Emission packets generated by optical input signals are brought over 150 /spl mu/m with electric fields, so the output fibers can detect the emission intensity as signals. The first-order analysis indicates that the drift velocity of minority electrons in GaAs limits the detectable maximum data rate and nanoseconds timescale signal routing operation at 20 Gb/s is possible at an electron drift velocity of 2/spl times/10/sup 7/ cm/s. 相似文献
95.
Jong Min Kim Donghee Lee Sang Lyul Min Chong Sang Kim 《Information Processing Letters》2003,85(2):93-97
A new dynamic buffer allocation strategy based on the notion of marginal gains is presented for the buffer cache that is used by the operating system to store frequently accessed disk blocks in main memory, and the performance of the proposed strategy is compared with those of previous allocation strategies. In the proposed strategy, marginal gain values are predicted by exploiting functions that approximate the expected number of buffer hits per unit time. Experimental results from both trace-driven simulation and an actual implementation in the FreeBSD operating system show that the proposed strategy accurately predicts the marginal gain values for various workloads resulting in significantly improved buffer hit ratios. 相似文献
96.
�غ���ܿ���ǿ�ȼ��㼰�ֳ�Ӧ�� 总被引:6,自引:1,他引:5
对于套管挤毁问题较为严重的油气水井,采用非API标准的特厚壁套管来提高其抗挤强度,是今后预防套管挤毁的重要发展方向。目前,特厚壁套管的抗挤强度计算和尺寸系列尚未形成工业标准,文章提出特厚壁套管的抗挤强度计算方法和尺寸系列,供设计者和厂家参考。API/ISO套管挤毁工作组曾对本文公式进行了测评,结果曼示具有较高的计算精度。大量计算表明,特厚壁套管的抗挤强度大大提高,约为加厚前原套管抗挤强度的1.5~4倍,甚至6倍。最后还介绍了特厚壁套管在中原油田的现场应用情况。 相似文献
97.
采用SE 3 0为固定液进行色谱柱分离 ,用外标定量法测定泥土中的微量六氯环戊二烯 ,结果最小检知量为 0 .18× 10 - 6 ,相关系数为 0 .99992。 相似文献
98.
Onishi K. Rino Choi Chang Seok Kang Hag-Ju Cho Young Hee Kim Nieh R.E. Jeong Han Krishnan S.A. Akbar M.S. Lee J.C. 《Electron Devices, IEEE Transactions on》2003,50(6):1517-1524
Bias-temperature instabilities (BTI) of HfO/sub 2/ metal oxide semiconductor field effect transistors (MOSFETs) have been systematically studied for the first time. NMOS positive BTI (PBTI) exhibited a more significant V/sub t/ instability than that of PMOS negative BTI (NBTI), and limited the lifetime of HfO/sub 2/ MOSFETs. Although high-temperature forming gas annealing (HT-FGA) improved the interface quality by passivating the interfacial states with hydrogen, BTI behaviors were not strongly affected by the technique. Charge pumping measurements were extensively used to investigate the nature of the BTI degradation, and it was found that V/sub t/ degradation of NMOS PBTI was primarily caused by charge trapping in bulk HfO/sub 2/ rather than interfacial degradation. Deuterium (D/sub 2/) annealing was found to be an excellent technique to improve BTI immunity as well as to enhance the mobility of HfO/sub 2/ MOSFETs. 相似文献
99.
100.
Wei-Hua Guo Yong-Zhen Huang Chun-Lin Han Li-Juan Yu 《Quantum Electronics, IEEE Journal of》2003,39(6):716-721
To improve the accuracy of measured gain spectra, which is usually limited by the resolution of the optical spectrum analyzer (OSA), a deconvolution process based on the measured spectrum of a narrow linewidth semiconductor laser is applied in the Fourier transform method. The numerical simulation shows that practical gain spectra can be resumed by the Fourier transform method with the deconvolution process. Taking the OSA resolution to be 0.06, 0.1, and 0.2 nm, the gain-reflectivity product spectra with the difference of about 2% are obtained for a 1550-nm semiconductor laser with the cavity length of 720 /spl mu/m. The spectra obtained by the Fourier transform method without the deconvolution process and the Hakki-Paoli method are presented and compared. The simulation also shows that the Fourier transform method has less sensitivity to noise than the Hakki-Paoli method. 相似文献