2-Aminoethoxydiphenyl borate (2-APB) inhibits capacitative calcium entry independently of the function of inositol 1,4,5-trisphosphate receptors

Capacitative calcium entry (CCE), the mechanism that replenishes intracellular calcium stores after depletion, is essential to intracellular calcium signaling. CCE is mediated by the channels in the plasma membrane generally referred to as "store operated channels (SOCs)". However, the molecular identity of the SOCs has never been determined, and the mechanism of the activation of SOCs remains to be elucidated. Recent studies have demonstrated that 2-aminoethoxydiphenyl borate (2-APB), which has been found to be an antagonist of inositol 1,4,5-trisphosphate receptors (IP3Rs), inhibits CCE, suggesting that IP3Rs channel activity is essential to the generation of CCE. However, CCE has also been reported to occur normally in IP3R-deficient cells. In order to resolve this discrepancy, we investigated the effect of 2-APB on CCE in IP3Rs-deficient cells. In response to store depletion with thapsigargin or N,N,N',N'-tetrakis (2-pyridylmethyl) ethylene diamine (TPEN), CCE was generated in IP3Rs-deficient cells the same as in wild-type cells, however, 2-APB abolished CCE in IP3Rs-deficient cells, despite the fact that this cell line does not possess functional IP3Rs. We also examined the effect of 2-APB on several types of TRP Ca2+ channels, which exhibit properties similar to those of SOCs. 2-APB had a different inhibitory effect on spontaneous and thapsigargin-induced Ba2+ influx in cells that transiently expressed individual TRP subtypes. These results suggest that the channel activity of IP3Rs is not essential to the generation of CCE in this cell line and that 2-APB inhibits CCE independently of the function of IP3Rs.     

Validation of temporal BRDFs of paddy fields estimated from MODIS reflectance data

The effect of the bidirectional reflectance distribution function (BRDF) is one of the most important factors in correcting and validating the reflectance obtained from remotely sensed data. While the importance of BRDF has become widely recognized, bidirectional reflectance factor (BRF) data measured for correction and validation are insufficient because of the technical difficulty of the measurement. The primary objective of the present research is to estimate BRDF effects from Moderate Resolution Imaging Spectroradiometer (MODIS) data. Temporal ground-based BRDFs of rice paddy fields were estimated from ground measurements conducted in June and August 2002. MODIS-derived BRDFs obtained from MODIS reflectance data and ground-based BRDFs were estimated using the reciprocal form of the RossThick and LiSparse (RossThick-LiSparse-R) kernels, a semiempirical BRDF model adopted for the operational MODIS BRDF product. The MODIS-derived band 1 (620-680 nm) and band 2 (841-876 nm) BRDFs were compared with the ground-based BRDFs corresponding to the same waveband, respectively. The comparison results demonstrate that BRDFs of paddy fields change in accordance with paddy growth and that MODIS-derived BRDFs are closely related to ground-based BRDFs in most of the cases. It was also revealed that MODIS-derived BRDFs can be estimated to a high degree of accuracy when MODIS data necessary for the estimation are available.     

Degradation evaluation of poly-Si TFTs by comparing normal and reverse characteristics and behavior analysis of hot-carrier degradation

We propose degradation evaluation of poly-Si TFTs by comparing normal and reverse characteristics. Since symmetrical normal and reverse characteristics indicate Joule-heating degradation whereas asymmetrical characteristics indicate hot-carrier degradation, they can be clearly and easily classified. Moreover, degradation occurrence is contrasted between standard and fine TFTs. Finally, behavior of the hot-carrier degradation is analyzed.     

A novel FSK demodulation method using short-time DFT analysis forLEO satellite communication systems

This paper proposes a novel frequency-shift keying (FSK) demodulation method using short-time discrete Fourier transform (ST-DFT) analysis for low-Earth-orbit (LEO) satellite communication systems. The ST-DFT-based FSK demodulation method is simple and robust to a large and time-variant frequency offset because it expands the received signal in a time-frequency plane and demodulates it only by searching the instantaneous spectral peaks with no complicated carrier-recovery circuit. Two kinds of demodulation strategies are proposed: a bit-by-bit demodulation algorithm and an efficient demodulation-algorithm frequency-sequence estimation (FSE) based on the Viterbi algorithm. In addition, in order to carry out an accurate ST-DFT window synchronization, a simple DFT-based ST-DFT window-synchronization method is proposed     

Overview of multicarrier CDMA

The authors present an overview of new multiple access schemes based on a combination of code division and multicarrier techniques, such as multicarrier code-division multiple access (MC-CDMA), multicarrier direct sequence CDMA (multicarrier DS-CDMA), and multitone CDMA (MT-CDMA)     

High-power, tunable, high-repetition rate TEA-13C18O2 laser

The authors report the power enhancement of a high-repetition-rate TEA-¹³C¹⁸O₂ laser by substitution of rare ¹⁵N₂ isotope instead of ¹⁴N₂ and its tunable single-mode operation. Efficient, high-power operation with a maximum average power of 25 W (100 Hz) at a slope efficiency of 5.6%, which is improved by a factor of 2 by substitution of ¹⁵N₂ instead of ¹⁴N₂, has been successfully achieved from a discharge volume of 57.5 cm³ with an active length of 26 cm. In addition, high-power, tunable, single-mode operation has been achieved with a three-mirror cavity consisting of two mirrors and a Littrow grating     

0.5-μm 3.3-V BiCMOS standard cells with 32-kilobyte cache andten-port register file

BiCMOS standard cell macros, including a 0.5-W 3-ns register file, a 0.6-W 5-ns 32-kbyte cache, a 0.2-W 3-ns table look-aside buffer (TLB), and a 0.1-W 3-ns adder, are designed with a 0.5-μm BiCMOS technology. A supply voltage of 3.3 V is used to achieve low power consumption. Several BiCMOS/CMOS circuits, such as a self-aligned threshold inverter (SATI) sense amplifier and an ECL HIT logic are used to realize high-speed operation at the low supply voltage. The performance of the BiCMOS macros is verified using a fabricated test chip     

Optical frequency domain ranging by a frequency-shifted feedbacklaser

This paper describes the theoretical and experimental study of a new technique for optical frequency domain ranging (OFDR) by a frequency-shifted feedback (FSF) laser. In conventional OFDR, a frequency chirped single-mode laser is used as a light source to convert a distance into a beat frequency, and a tradeoff exists between measurement range and resolution. The FSF laser output consists of periodically generated chirped frequency components whose chirp rate is faster than 100 PHz/s (P=10¹⁵), By use of the FSF laser, the tradeoff is removed and long-distance high-resolution OFDR is realized In the experiment, a distance of 18.5 km was measured with a resolution of 20 mm     

P-MOSFET's with ultra-shallow solid-phase-diffused drain structureproduced by diffusion from BSG gate-sidewall

A p-MOSFET structure with solid-phase diffused drain (SPDD) is proposed for future 0.1-μm and sub-0.1-μm devices. Highly doped ultrashallow p⁺ source and drain junctions have been obtained by solid-phase diffusion from a highly doped borosilicate glass (BSG) sidewall. The resulting shallow, high-concentration drain profile significantly improves short channel effects without increasing parasitic resistance. At the same time, an in situ highly-boron-doped LPCVD polysilicon gate is introduced to prevent the transconductance degradation which arises in ultrasmall p-MOSFETs with lower process temperature as a result of depletion formation in the p⁺-polysilicon gate. Excellent electrical characteristics and good hot-carrier reliability are achieved