A regulatory role for recombinase activating genes, RAG-1 and RAG-2, in T cell development

Effects of etoposide (VP-16) and cytosine arabinoside (Ara-C) on the cell cycle of HL-60 and THP-1 cells were studied by flow cytometry using the bromodeoxyuridine (BrdU)/DNA assay technique to investigate the efficacy of VP-16 for monocytic leukemia cells. VP-16 inhibited the proliferation of THP-1 cells more strongly than that of HL-60 cells at any concentrations used at 24 and 48 hr. VP-16 arrested HL-60 and THP-1 cells in the G2/M phase and reduced them in the G0/G1 and early S phase at higher concentrations. There was no significant difference in the percentage of G2/M phase cells at the same concentration between both cells. However, reduction in the G0/G1 and early S phase cells was more marked in THP-1 than HL-60 cells significantly. On the other hand, Ara-C perturbed the cell cycle of HL-60 cells more than that of THP-1 cells at 24 and 48 hr. These results suggest that the effects of VP-16 on the cell cycle may be more intense in THP-1 than HL-60 cells, and support the efficacy of VP-16 for treating monocytic leukemia in vivo.     

Synchronized transform-limited operation of 10-GHz colliding pulse mode-locked laser

We report a 10-GHz colliding pulse mode-locked laser fabricated with integrated active-passive waveguides. The laser fabrication adopted a deep reactive ion etching and single-step metal-organic vapor phase epitaxy regrowth process for forming the buried heterostructure waveguide. Clean output pulses resulted from laterally tilting the active-passive interface and effectively suppressing residual back-reflections at the interface. Hybrid mode-locking resulted in a synchronized transform-limited sech/sup 2/optical waveform. Pulsewidth, chirp, timing jitter, and frequency-locking range were investigated through systematic device biasing condition optimization.     

Rapid isothermal processing for fabrication of GaAs-basedelectronic devices [HBTs]

The use of rapid isothermal processing (RIP) is detailed for each of the three annealing steps in the fabrication of heterostructure-based devices such as heterojunction bipolar transistors (HBTs). RIP can be used for the alloying of ohmic metal contacts, annealing of ion-bombarded regions for device isolation or parasitic capacitance reduction, and for conventional implant activation annealing. High-speed (f_T=65 GHz) HBTs were achieved using RIP for all of the required heating steps. The authors compare the use of several types of silicon carbide-coated graphite susceptors for eliminating slip formation on 2- and 3-in-diameter GaAs wafers during high-temperature implant activation annealing     

Editorial

Editorial Introduction

Editorial     

Improvedn-type GaAs ohmic contacts compatible with a chlorine-based dry-etch process

We report the use of a Mo barrier layer within Ni/Au-Ge based ohmic contacts to GaAs for eliminating an etch stop reaction that occurs during Cl-based dry etching of heterojunction bipolar transistors. With conventional Ni/Au-Ge/Ag ohmic contacts, chlorinecontaining discharges produce a passivating layer of AgCl on the semiconductor surface, preventing further etching. This layer is absent when the Ag in the contact is replaced with Mo. The Mo has several advantages over other diffusion barrier layers and yields contacts with excellent adhesion, smooth morphology, and sharp edge definition. The average contact resistivity of these contacts ton ⁺-GaAs(n = 6 × 10¹⁸ cm^-3) was 0.074 ohm-mm, which is lower than the typical contact resistivity of conventional Ni/Au-Ge/ Ag metallization (0.11 ohm-mm).     

Photoelectric properties of MISM phthalocyanine structure

Langmuir-Blodgett films have been prepared from copper tetra-4-t-butylphthalocyanine. A voltage dependence of capacitance can be attributed to the presence of a Schottky depletion layer. The barrier potential was determined as l·4eV, and the carrier concentration about 10²⁴m^?3     

An efficient maximum-redundancy radix-8 SRT division andsquare-root method

A new approach to integrating hardware multiplication, division, and square-root is presented. We use a fully integrated control path which simultaneously reduces part of the redundant partial-remainder and performs a truncated multiplication of the next quotient or square-root digit by the divisor or square-root value. A separate (parallel) full precision iterative multiplier is used for partial remainder production. Strategic details of a radix-8 implementation are discussed. It is shown that a maximally redundant digit set is a viable choice for high performance in this case     

Inductively coupled plasma etching of InGaP, AllnP, and AlGaP in Cl2 and BCl3 chemistries

Dry etching of InGaP, AlInP, and AlGaP in inductively coupled plasmas (ICP) is reported as a function of plasma chemistry (BCl₃ or Cl₂, with additives of Ar, N₂, or H₂), source power, radio frequency chuck power, and pressure. Smooth anisotropic pattern transfer at peak etch rates of 1000–2000Å·min^?1 is obtained at low DC self-biases (?100V dc) and pressures (2 mTorr). The etch mechanism is characterized by a trade-off between supplying sufficient active chloride species to the surface to produce a strong chemical enhancement of the etch rate, and the efficient removal of the chlorinated etch products before a thick selvedge layer is formed. Cl₂ produces smooth surfaces over a wider range of conditions than does BCl₃.