Synthesis of side-chain liquid crystalline polyoxetanes containing 4-dodecanyloxyphenyltrans-4-alkylcyclohexanoate side groups

Summary The synthesis and characterization of side-chain liquid crystalline polyoxetanes containing 4-dodecanyloxyphenyl trans-4-alkylcyclohexanoate side groups are presented. All the obtained monomers exhibit smectic B mesomorphism, while all the obtained polymers present smectic A, smectic B and smectic G mesophases. A longer terminal alkyl group is leading to the formation of a more stable mesophase.     

Efficiency improvement of near-ultraviolet InGaN LEDs using patterned sapphire substrates

The use of conventional and patterned sapphire substrates (PSSs) to fabricate InGaN-based near-ultraviolet (410 nm) light-emitting diodes (LEDs) was demonstrated. The PSS was prepared using a periodic hole pattern (diameter: 3 /spl mu/m; spacing: 3 /spl mu/m) on the (0001) sapphire with different etching depths. From transmission-electron-microscopy and etch-pit-density studies, the PSS with an optimum pattern depth (D/sub h/=1.5 /spl mu/m) was confirmed to be an efficient way to reduce the thread dislocations in the GaN microstructure. It was found that the output power increased from 8.6 to 10.4 mW, corresponding to about 29% increases in the external quantum efficiency. However, the internal quantum efficiency (@ 20 mA) was about 36% and 38% for the conventional and PSS LEDs, respectively. The achieved improvement of the output power is not only due to the improvement of the internal quantum efficiency upon decreasing the dislocation density, but also due to the enhancement of the extraction efficiency using the PSS. Finally, better long-time reliability of the PSS LED performance was observed.     

Nitride-based flip-chip ITO LEDs

Nitride-based flip-chip indium-tin-oxide (ITO) light-emitting diodes (LEDs) were successfully fabricated. It was found that the forward voltage and the 20 mA output power of the flip-chip ITO LED were 3.32 V and 14.5 mW, respectively. Although the operation voltage of such a flip-chip ITO LED was slightly larger, it was found that its output power was much larger than those of conventional nonflip-chip LEDs. It was also found that flip-chip ITO LEDs were more reliable.     

Implementation of high-coupling and broadband transformer in RFCMOS technology

This paper proposes a structure for transformer with high-coupling, broadband, and small chip area characteristics using current silicon-based technology. The proposed device has tight coupling (k=0.92), wide bandwidth (f/sub SR/=30.8 GHz), and minimum chip area (OD=140 /spl mu/m). Furthermore, the analytical formula for calculating mutual inductance is derived in this study; experimental results indicate that the analytical formula is feasible. The proposed transformer will be useful in designing high-performance RF integrated circuits for wireless applications.