Cognitive evaluation for conceptual design: cognitive role of a 3D sculpture tool in the design thinking process

ABSTRACT

This study focuses on the decisive role played by the digital design environment in the cognitive design process and design thinking. To analyse the cognitive role of digital design tools, we carried out a protocol analysis of conventional design sketching and a 3D sculpture tool. Cognitive evaluation was a differentiating factor when considering the contextual role of the 3D sculpture tool in subsequent evaluations, non-sequential evaluations for conversion, and passive approaches within the design process. Cognitive evaluation played the following roles: validation, extension, navigation, exploration, and confirmation. The navigation, exploration, and extension roles played by non-sequential evaluation were mainly related to inductive design thinking. Finally, the types of cognitive evaluation and their roles when using the 3D sculpture tool were different, according to the design thinking type. This study explored the multidimensional roles of cognitive evaluation using a 3D sculpture tool and its relationship with design thinking types.     

Color segmentation robust to brightness variations by using B-spline curve modeling

Color segmentation takes a great attention because color is an effective and robust visual cue for characterizing an object from the others. However, color segmentation suffers from color variations incurred by irregular illumination changes. We propose a reliable color modeling approach in hue–saturation–intensity (HSI) color space while considering intensity information by adopting the B-spline curve fitting to make a mathematical model for statistical characteristics of a color with respect to intensity. It is based on the fact that color distribution of a single-colored object is not invariant with respect to brightness variations even in the HS (hue–saturation) plane. The statistical characteristics contain the mean and standard deviation of hue and saturation with respect to intensity. They are mathematically expressed as four bar graphs. In order to fit the bar graphs to continuous curves, we use B-spline curve fitting procedure. From several experimental results, we verify that the proposed algorithm is successfully applied to color segmentation under various illumination conditions.     

12.1‐in. WXGA AMOLED display driven by InGaZnO thin‐film transistors

Abstract— A full‐color 12.1‐in.WXGA active‐matrix organic‐light‐emitting‐diode (AMOLED) display was, for the first time, demonstrated using indium‐gallium‐zinc oxide (IGZO) thin‐film transistors (TFTs) as an active‐matrix backplane. It was found that the fabricated AMOLED display did not suffer from the well‐known pixel non‐uniformity in luminance, even though the simple structure consisting of two transistors and one capacitor was adopted as the unit pixel circuit, which was attributed to the amorphous nature of IGZO semiconductors. The n‐channel a‐IGZO TFTs exhibited a field‐effect mobility of 17 cm²/V‐sec, threshold voltage of 1.1 V, on/off ratio >10⁹, and subthreshold gate swing of 0.28 V/dec. The AMOLED display with a‐IGZO TFT array is promising for large‐sized applications such as notebook PCs and HDTVs because the a‐IGZO semiconductor can be deposited on large glass substrates (larger than Gen 7) using the conventional sputtering system.     

Electron‐beam deposition of MgO on plastic substrate and manufacturing flexible flat fluorescent lamp

Abstract— A flexible fluorescent lamp that utilizes the same plasma discharge mode as in PDPs has been manufactured. The structure of the flexible lamp is simple and easy to manufacture. All‐plastic materials including plastic substrates, barrier ribs (spacers), and sealants for low‐temperature manufacturing processing have been adopted except for the phosphor and MgO thin film. The MgO thin films were coated on the plastic substrates as a protection layer against the plasma discharge. The adhesion and biaxial texture of MgO thin film deposited on the plastic substrates, poly‐ethyle‐nenaphthalate (PEN) and polycarbonate (PC), at low temperature (100–180°C) has been characterized. The MgO film on PEN shows good adhesion under a repeated bending test. The manufactured flexible lamp consists of two plastic substrates of about 3 in. on the diagonal, barrier rib (spacer), and external ITO electrodes. The Ne‐Xe (5%) gas mixture at 100–200 Torr was used for the discharge gas. A maximum surface luminance of about 100 cd/m² was achieved for a 1 ‐kHz AC pulse.     

DEVS-Based modeling of VoIP spam callers’ behavior for SPIT level calculation

At the present time the VoIP (Voice over Internet Protocol) service is generally accepted as an alternative for people seeking cheaper means to make a phone call. Users of VoIP service may fall anywhere along a spectrum between types at two extremes: one of which is an ordinary caller who doesn’t use the telephone for commercial purposes, while the other is a person who generates spam calls for commercial purposes. The focus of this paper concerns modeling of spam callers’ behavior to calculate the SPIT (Spam over Internet Telephony) level for management of the quality of service. From the perspective of a VoIP service provider’s view, spam callers are also a type of customer and sometimes they are valuable for increasing revenue. However, if a service provider does not manage spam calls, it can harm their business, because ordinary users might not receive phone calls using the phone numbers of the VoIP service. Thus, there is a trade-off between revenues and usability in managing spam calls in the VoIP service. This work presents a model of spam caller’s behavior using the DEVS (Discrete Event System Specification) formalism. The DEVS formalism is applicable as a model of behavior, by defining the state and state transition of the target of the model. In our model, we use six main parameters to define the states and state transitions. Each state is represented by a number which indicates the SPIT level of a caller. If the value is 1.0 then the caller is more similar to a spam caller. Based on the model definition, we constructed a SPIT level Calculation UI (User Interface) that is used to manage spam calls to improve VoIP service quality.     

Correlated Quantum Phenomena of Spin–Orbit Coupled Perovskite Oxide Heterostructures: Cases of SrRuO3 and SrIrO3 Based Artificial Superlattices

Unexpected, yet useful functionalities emerge when two or more materials merge coherently. Artificial oxide superlattices realize atomic and crystal structures that are not available in nature, thus providing controllable correlated quantum phenomena. This review focuses on 4d and 5d perovskite oxide superlattices, in which the spin–orbit coupling plays a significant role compared with conventional 3d oxide superlattices. Modulations in crystal structures with octahedral distortion, phonon engineering, electronic structures, spin orderings, and dimensionality control are discussed for 4d oxide superlattices. Atomic and magnetic structures, J_eff = 1/2 pseudospin and charge fluctuations, and the integration of topology and correlation are discussed for 5d oxide superlattices. This review provides insights into how correlated quantum phenomena arise from the deliberate design of superlattice structures that give birth to novel functionalities.     

Room-Temperature-Processable Highly Reliable Resistive Switching Memory with Reconfigurability for Neuromorphic Computing and Ultrasonic Tissue Classification

Reversible metal-filamentary mechanism has been widely investigated to design an analog resistive switching memory (RSM) for neuromorphic hardware-implementation. However, uncontrollable filament-formation, inducing its reliability issues, has been a fundamental challenge. Here, an analog RSM with 3D ion transport channels that can provide unprecedentedly high reliability and robustness is demonstrated. This architecture is realized by a laser-assisted photo-thermochemical process, compatible with the back-end-of-line process and even applicable to a flexible format. These superior characteristics also lead to the proposal of a practical adaptive learning rule for hardware neural networks that can significantly simplify the voltage pulse application methodology even with high computing accuracy. A neural network, which can perform the biological tissue classification task using the ultrasound signals, is designed, and the simulation results confirm that this practical adaptive learning rule is efficient enough to classify these weak and complicated signals with high accuracy (97%). Furthermore, the proposed RSM can work as a diffusive-memristor at the opposite voltage polarity, exhibiting extremely stable threshold switching characteristics. In this mode, several crucial operations in biological nervous systems, such as Ca²⁺ dynamics and nonlinear integrate-and-fire functions of neurons, are successfully emulated. This reconfigurability is also exceedingly beneficial for decreasing the complexity of systems—requiring both drift- and diffusive-memristors.     

A Novel and Facile Route to Synthesize Atomic‐Layered MoS2 Film for Large‐Area Electronics

High‐quality and large‐area molybdenum disulfide (MoS₂) thin film is highly desirable for applications in large‐area electronics. However, there remains a challenge in attaining MoS₂ film of reasonable crystallinity due to the absence of appropriate choice and control of precursors, as well as choice of suitable growth substrates. Herein, a novel and facile route is reported for synthesizing few‐layered MoS₂ film with new precursors via chemical vapor deposition. Prior to growth, an aqueous solution of sodium molybdate as the molybdenum precursor is spun onto the growth substrate and dimethyl disulfide as the liquid sulfur precursor is supplied with a bubbling system during growth. To supplement the limiting effect of Mo (sodium molybdate), a supplementary Mo is supplied by dissolving molybdenum hexacarbonyl (Mo(CO)₆) in the liquid sulfur precursor delivered by the bubbler. By precisely controlling the amounts of precursors and hydrogen flow, full coverage of MoS₂ film is readily achievable in 20 min. Large‐area MoS₂ field effect transistors (FETs) fabricated with a conventional photolithography have a carrier mobility as high as 18.9 cm² V^?1 s^?1, which is the highest reported for bottom‐gated MoS₂‐FETs fabricated via photolithography with an on/off ratio of ≈10⁵ at room temperature.