煤层气利用新方案

在介绍煤层气的常规利用方案的基础上，提出了两种利用煤层气的新方案：一是采用变压吸附技术，纯化瓦斯气，将低浓度瓦斯气浓缩为高浓度瓦斯气，加压后成为CNG，用作CNG气源或较远距离城市的天然气气源；二是在第一种方案的基础上，将高浓度瓦斯气全部采用深冷法加以液化，生产LNG，并将LNG运送至更远距离用作LNG加气站、CNG加气站气源。最后还以松藻煤电公司为例，作了新方案的工程预算     

载体比表面积及孔径对Nb_2O_5/α-Al_2O_3催化剂酸性及反应性能的影响

采用浸渍法制备了Nb2O5/α-A l2O3催化剂(简称催化剂)并用于环氧乙烷水合制乙二醇的反应,通过控制α-A l2O3载体中致孔剂的含量来调变载体的孔径、孔分布及比表面积;采用吡啶吸附红外光谱、氨程序升温脱附法研究了载体的比表面积及孔径对催化剂酸性及反应性能的影响。实验结果表明,产物的选择性受扩散因素及催化剂酸性的影响,而催化剂的酸量、酸密度可以通过载体的孔径及比表面积的变化加以调控。比表面积较小及孔径较大的载体对催化剂催化环氧乙烷水合制乙二醇的反应较为有利。当载体的比表面积小于0.80m2/g、孔径为4.00~8.00μm时,在反应温度160℃、反应压力1.5M Pa、n(H2O)∶n(EO)=22、液态空速25h-1的条件下,环氧乙烷的转化率大于99.8%,乙二醇的选择性超过89.9%。     

哈得4联合站技术改造

位于塔克拉玛干大沙漠腹地的哈得4油田,2004年成为全国最大的沙漠油田,2005年产量达到200×104t。在对联合站存在问题逐一分析的基础上,提出了技术改造的措施。现场采集的运行数据表明技术改造效果明显,增强了流程可靠性,提高了自动化水平,降低了能耗。     

一种制氢预转化催化剂还原的新方法

对上海高桥分公司2×10~4m~3/h(标准状态)制氢装置原设计的预转化催化剂还原流程进行了改进。先跳开预转化反应器,利用转化炉制取氢气,再用自产的高纯氢气代替重整氢,对预转化催化剂进行单独升温还原,避免了催化剂在还原初期因发生甲烷化反应而超温失活的问题,使催化剂具有更好的活性和稳定性。     

丙烯醛制备1,3-丙二醇的中型试验研究

对丙烯醛水合、加氢制1，3-丙二醇工艺进行了中试研究，主要对小试技术的可靠性进行验证。结果表明，丙烯醛经水合、加氢制1，3-丙二醇的工艺技术可行，反应器、精馏塔等设备设计合理。中试丙烯醛水合单程转化率为45％～55％，3-羟基丙醛选择性达到了93％左右，3-羟基丙醛加氢收率接近100％，产品1，3-丙二醇的醛基质量分数降至5μg／g以下。与小试结果相比较，中试的水合选择性明显提高，加氢催化剂活性寿命延长。     

Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.     

坚持管理与科技两个轮子齐驱动

大乘资氮集团有限公司狠抓管理和科技，使企业由经营型向效益型转变，同时加速了企业经济增长方式的转变。     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

Densification involved in the UV-based photosensitivity of silicaglasses and optical fibers

A comprehensive survey of photosensitivity in silica glasses and optical fiber is reviewed. Recent work on understanding the mechanisms contributing to germanium or aluminum doped fiber photosensitivity is discussed within the framework of photoelastic densification models