SCB火工品的研究与发展

文章评述了半导体桥火工品问世以来的研究成果与发展趋势。主要内容有半导体桥作用机理、半导体桥的结构与封装、半导体桥火工品的特点、半导体桥火工品的应用、半导体桥火工品的研究和发展趋势。     

葛洲坝二江电厂监控系统升级改造的实施与探讨

葛洲坝二江电厂计算机监控系统投产于1995年,运行时间已久,无论从硬件还是软件方面已不能满足目前的生产要求。升级后的新系统在各个方面均有了很大程度的改进,它的应用使得葛洲坝二江电厂的自动化控制程度有了很大的提高,为厂站“无人值班(少人值守)”的现代化管理以及三峡—葛洲坝梯级电站的联合调度提供了有力的保障。     

三峡工程三期截流三维施工仿真研究

三峡工程三期截流提前到 2 0 0 2年 11月上旬进行 ,截流难度显著增大。为了使截流工程顺利进行 ,以先进的计算机可视化技术为基础 ,采用IMAGIS软件生成三维地形图 ,用Creator建模形成导流明渠、纵向围堰及三期围堰等三维实体模型 ,最后通过运用虚拟现实技术 ,开发出三峡工程三期截流施工实时动态演示、查询系统。该系统能根据需要实现漫游 ,可以随意定位到感兴趣的区域作细部观察 ,且具有良好的交互性。通过施工仿真研究 ,将三期截流施工过程生动地显示在屏幕上 ,用以指导施工组织管理 ,为三期截流的决策和控制提供了有效的工具     

Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.     

阴,阳离子聚合物地层内凝胶化改善水驱效果的研究

研究了一杆阴离子聚合物（Ａｃ５３０）和一种阳离子聚合物（Ｍｂ５８１）在水溶液中形成凝胶的条件和过程、凝胶化学结构、形态、稳定性和力学性能。在模拟地层的二维微观模型内观测了两种聚合物驱替渗流、相逼、形成凝胶、凝胶封堵大孔道的机理。在亲水填砂模型内测定了阴、阳离子聚合物凝胶体系降低渗透率的能力。     

利用黄河泥沙加固下游大堤

黄河是一条举世闻名的多泥沙河流，善淤、善决、善徒给沿河人民带来对过深重灾难，防洪问题一直是国家的心腹之患。泥沙问题是黄河防洪问题的症结所在。在总结固大堤经验的基础，进行挖河疏浚，淤筑“相对地下河”，已作为黄河治理的一项重大决策付诸实施。     

小剂量辐射对肿瘤细胞K_（562）及肿瘤病人天然杀伤细胞（NK）活性的影响

已知小剂量辐射可增强机体免疫功能。从对高本底地区的调查发现，该地区居民肿瘤死亡率及某些肿瘤发病率有所降低（１）。ＮＫ细胞能直接杀伤肿瘤细胞，在肿瘤免疫中起着重要的作用。本文观察小剂量辐射对肿瘤病人和正常人外周血淋巴细胞ＮＫ活性的相对效应以及对人红白血病细胞（Ｋ（５６２）细胞）的影响，以期从体外买验来探索较小剂量辐射对肿瘤治疗的影响     

新型MSIS结构气敏电容的研究

采用静电喷雾高温分解工艺制备ＳｎＯ２气敏膜，并与Ｓｉ３Ｎ４－ＳｉＯ２集成多层介质膜，用催化金属Ｐｔ作栅电极，制成新型的ＭＳＩＳ结构气敏电容。通过检测平带电压的变化，研究对Ｈ２和Ｏ２的气敏特性，分析其气敏机理并提出了检测的物理模型．     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.