Steels for Bridge Structures

Metallurgist - We consider domestic and foreign standards for rolled metals used in bridge building. Domestic standards contain elevated requirements to the reliability of rolled metals in terms of...     

The Electron–Phonon Interaction of Low-Dimensional and Multi-Dimensional Materials from He Atom Scattering

Atom scattering is becoming recognized as a sensitive probe of the electron–phonon interaction parameter λ at metal and metal-overlayer surfaces. Here, the theory is developed, linking λ to the thermal attenuation of atom scattering spectra (in particular, the Debye–Waller factor), to conducting materials of different dimensions, from quasi-1D systems such as W(110):H(1 × 1) and Bi(114), to quasi-2D layered chalcogenides, and high-dimensional surfaces such as quasicrystalline 2ML-Ba(0001)/Cu(001) and d-AlNiCo(00001). Values of λ obtained using He atoms compare favorably with known values for the bulk materials. The corresponding analysis indicates in addition, the number of layers contributing to the electron–phonon interaction, which is measured in an atom surface collision.     

The Possibility of Dense Materials Based on Obtaining an AlN–SiC Solid Solution by Self-Propagating High-Temperature Synthesis Gasostating

Russian Journal of Non-Ferrous Metals - The synthesis and sintering of the (AlN)x(SiC)1 – x solid solution have been studied under conditions of self-propagating high-temperature synthesis...     

Optimization of the Sintering Parameters for Materials Manufactured by Powder Injection Molding

Powder Metallurgy and Metal Ceramics - The properties of sintered and heat-treated steels produced from the Catamold 8740 material by powder injection molding were examined. Parts made of the...     

Viscosity of Fe90B x Si(10 − x) melts

High Temperature - The temperature dependences of the viscosity of liquid Fe90B x Si(10 − x) alloys are studied in the mode of heating and subsequent cooling. The temperature dependences of...     

An automated system based on cryogenic probe station for integrated studies of semiconductor light-emitting structures and wafers in the range of 15 to 475 K

An automated system for integrated electrophysical and optical studies of semiconductor nanoheterostructures, which operates in a wide temperature range from 15 to 475 K, is designed. The setup is intended to measure the temperature and frequency admittance and electroluminescence spectra of light-emitting diode and laser chips formed on substrates of diameter up to 50.2 mm, and the distribution of parameters over the wafer. The setup includes the closed-cycle helium cryogenic station, LCR meter, and temperature controller. The characterization results of nanoheterostructures with InGaN/GaN multiple quantum wells, which are used for creating highly efficient white and blue light-emitting diodes, are presented.