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991.
Y3?xCe x Fe5 O 12 (CeYIG) ceramics, with x = 0, 0.15, 0.25, 0.35, 0.45, and 0.5, were fabricated by a conventional ceramic sintering technique. We studied the structures and magnetic fields of a series of CeYIG ceramics using X-ray powder diffraction, a scanning electron microscope, and a superconducting quantum interference device magnetometer. Findings showed that the substitution limit of the concentration of Ce3+ ions in the yttrium iron garnet structure was approximately x = 0.25. An extra CeO2 phase was detected in the ceramic when the addition of CeO2 content overtook the limit. The lattice constants and relative densities increased by increasing the Ce3+ contents in the ceramics. First, the saturation magnetization increased gradually with increases in the substitute concentration of Ce3+ ions and then decreased gradually when x = 0.35, 0.45, and 0.5. Overall, this study showed that the Y3?xCe x Fe5 O 12 material with x ≤ 0.15 exhibited excellent magnetic properties. Hence, the material show promise for magneto-optical and microwave communication applications.  相似文献   
992.
The geometrical structure of CdSe was optimized by using the ultrasoft pseudopotential method of a total energy plane wave based on density functional theory. The band structure, density of states, and optical properties were calculated and discussed in detail. The Mn-doped CdSe is found to be a half-metallic ferromagnet with 100% carrier spin polarization at the Fermi level. At a Mn concentration of 12.5%, the calculated total energy of the spin-polarized state is 614 meV lower than that of the nonspin-polarized state. The net magnetic moment of 5 μ B is found per supercell for 12.5% Mn-doped CdSe. The estimated Curie temperature of 748.6 K for Mn-doped CdSe is above room temperature. The ferromagnetic ground state in Mn-doped CdSe can be explained in terms of the p ? d hybridization mechanism. These results suggest that Mn-doped CdSe may present a promising dilute magnetic semiconductor, and may have potential applications in the field of spintronics.  相似文献   
993.
Combining chemotherapy and radiotherapy (chemoradiotherapy) has been widely applied in many clinical practices, showing promises in enhancing therapeutic outcomes. Nontoxic nanocarriers that not only are able to deliver chemotherapeutics into tumors, but could also act as radiosensitizers to enhance radiotherapy would thus be of great interest in the development of chemoradiotherapies. To achieve this aim, herein mesoporous tantalum oxide (mTa2O5) nanoparticles with polyethylene glycol (PEG) modification are fabricated. Those mTa2O5‐PEG nanoparticles could serve as a drug delivery vehicle to allow efficient loading of chemotherapeutics such as doxorubicin (DOX), whose release appears to be pH responsive. Meanwhile, owing to the interaction of Ta with X‐ray, mTa2O5‐PEG nanoparticles could offer an intrinsic radiosensitization effect to increase X‐ray‐induced DNA damages during radiotherapy. As a result, DOX‐loaded mTa2O5‐PEG (mTa2O5‐PEG/DOX) nanoparticles can offer a strong synergistic therapeutic effect during the combined chemoradiotherapy. Furthermore, in chemoradiotherapy, such mTa2O5‐PEG/DOX shows remarkably reduced side effects compared to free DOX, which at the same dose appears to be lethal to animals. This work thus presents a new type of mesoporous nanocarrier particularly useful for the delivery of safe and effective chemoradiotherapy.  相似文献   
994.
Copper hydroxide acetate (CHA), one layered hydroxide compound with tunable magnetism, attracts great interest because of its potential applications in memory devices. However, ferromagnetism for CHA is only demonstrated by means of GPa pressure. Herein, a new method is reported, involving the combination of different crystallization pathways to control crystallization of amorphous CHA toward the formation of CHA/polymer composites with tunable magnetic properties and even a tunability that can be tested at room temperature. By using poly[(ethylene glycol)6 methyl ether methacrylate]‐block‐poly[2‐(acetoacetoxy) ethyl methacrylate] (PEGMA‐b‐PAEMA) diblock copolymers as additives in combination with a post‐treatment process by ultracentrifugation, it is demonstrated that CHA and PEGMA‐b‐PAEMA form composites exhibiting different magnetic properties, depending on CHA in‐plane nanostructures. Analytical characterization reveals that crystallization of CHA is induced by ultracentrifugation, during which CHA nanostructures can be well controlled by changing the degrees of polymerization of the PEGMA and PAEMA blocks and their block length ratios. These findings not only present the first example of using crystallization from polymer stabilized amorphous precursors toward the generation of magnetic nanomaterials with tunable magnetism but also pave the way for the future design of functional composite materials.  相似文献   
995.
Porous structured materials have unique architectures and are promising for lithium‐ion batteries to enhance performances. In particular, mesoporous materials have many advantages including a high surface area and large void spaces which can increase reactivity and accessibility of lithium ions. This study reports a synthesis of newly developed mesoporous germanium (Ge) particles prepared by a zincothermic reduction at a mild temperature for high performance lithium‐ion batteries which can operate in a wide temperature range. The optimized Ge battery anodes with the mesoporous structure exhibit outstanding electrochemical properties in a wide temperature ranging from ?20 to 60 °C. Ge anodes exhibit a stable cycling retention at various temperatures (capacity retention of 99% after 100 cycles at 25 °C, 84% after 300 cycles at 60 °C, and 50% after 50 cycles at ?20 °C). Furthermore, full cells consisting of the mesoporous Ge anode and an LiFePO4 cathode show an excellent cyclability at ?20 and 25 °C. Mesoporous Ge materials synthesized by the zincothermic reduction can be potentially applied as high performance anode materials for practical lithium‐ion batteries.  相似文献   
996.
997.
The triggering effect of silver nanoparticles (NPs) on the induction of allergic reactions is evaluated, by studying the activation of mast cells and the clinical features of atopic dermatitis in a mouse model. Granule release is induced in RBL‐2H3 mast cells by 5 nm, but not 100 nm silver NPs. Increases in the levels of reactive oxygen species (hydrogen peroxide and mitochondrial superoxide) and intracellular Ca++ in mast cells are induced by 5 nm silver NPs. In a mouse model of atopic dermatitis induced by a mite allergen, the skin lesions are more severe and appear earlier in mice treated simultaneously with 5 nm silver NPs and allergen compared with mice treated with allergen alone or 100 nm silver NPs and allergen. The histological findings reveal that number of tryptase‐positive mast cells and total IgE levels in the serum increase in mice treated with 5 nm silver NPs and allergen. The results in this study indicate that cotreatment with 5 nm silver NPs stimulates mast cell degranulation and induces earlier and more severe clinical alterations in allergy‐prone individuals.  相似文献   
998.
High‐quality and large‐area molybdenum disulfide (MoS2) thin film is highly desirable for applications in large‐area electronics. However, there remains a challenge in attaining MoS2 film of reasonable crystallinity due to the absence of appropriate choice and control of precursors, as well as choice of suitable growth substrates. Herein, a novel and facile route is reported for synthesizing few‐layered MoS2 film with new precursors via chemical vapor deposition. Prior to growth, an aqueous solution of sodium molybdate as the molybdenum precursor is spun onto the growth substrate and dimethyl disulfide as the liquid sulfur precursor is supplied with a bubbling system during growth. To supplement the limiting effect of Mo (sodium molybdate), a supplementary Mo is supplied by dissolving molybdenum hexacarbonyl (Mo(CO)6) in the liquid sulfur precursor delivered by the bubbler. By precisely controlling the amounts of precursors and hydrogen flow, full coverage of MoS2 film is readily achievable in 20 min. Large‐area MoS2 field effect transistors (FETs) fabricated with a conventional photolithography have a carrier mobility as high as 18.9 cm2 V?1 s?1, which is the highest reported for bottom‐gated MoS2‐FETs fabricated via photolithography with an on/off ratio of ≈105 at room temperature.  相似文献   
999.
1000.
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