Rare-earth-enabled universal solders for microelectromechanical systems and optical packaging

In packaging of microelectromechanical systems (MEMS), optical, and electronic devices, there is a need to directly bond a wide variety of inorganic materials, such as oxides, nitrides, and semiconductors. Such applications involve hermetic-sealing components, three-dimensional MEMS assembly components as well as active semiconductor or optical components, dielectric layers, diffusion barriers, waveguides, and heat sinks. These materials are known to be very difficult to wet and bond with low melting-point solders. New Sn-Ag- or Au-Sn-based universal solders doped with a small amount of rare-earth (RE) elements have been developed, which now allow direct and powerful bonding onto the surfaces of various MEMS, optical, or electronic device materials. The microstructure, interface properties, and mechanical behavior of the bonds as well as the potential packaging applications of these new solder materials for MEMS and optical fiber devices are described. Various packaging-related structural, thermal, or electrical issues in MEMS are also discussed.     

电解铜箔产业发展趋势

随着技术的进步,电解铜箔在厚度上迅速向薄、超薄方向发展,THE、RCC、CAC等特殊性能铜箔需求比例快速 增加,以锂离子电池为代表的新应用领域正在形成。     

长江口北支水道水沙特性分析

从实测资料出发,结合水流数值计算成果,对长江口北支水道的水流、泥沙和含盐度等资料进行分析,得出了北支水道的水沙特性,并分析了水沙变化与河床变化的相互关系.北支水道在1958年南通河段河势控制后,径流分流比逐年下降,并渐趋稳定于3%左右.北支水道受径流影响越来越小,主要受潮流作用.随着水沙特性的逐年变化,北支水道0 m以下槽蓄容量逐年减小,并渐趋稳定,北支上段为逐年淤积最快的区域.由此反过来影响了水沙条件的进一步变化,使北支上段平均潮差增加,北支的会潮点由崇头附近下移至青龙港附近.     

模具采购管理工作浅谈

针对模具制造企业的特点，从采购管理概述、供应商质量控制、采购价格、供应商交货控制及付款方式简述了采购的管理工作。     

FBOLES—outline of a frequency-based on-line expert system approach for fault diagnoses in nuclear power plants

The basic concept of a novel frequency-based on-line expert system (FBOLES) approach for on-line fault diagnoses in nuclear power plants has been presented previously. This paper reports further progress, and includes how to express the uncertainties of expert opinion in knowledge-bases and propagate then in inferences, and how to deal with imperfect knowledge-bases. It also describes the main elements of FBOLES and outlines how the system works under complex conditions including the dynamic behavior of signals during accidents, multiple failures, and on-line changes of plant operation mode. Its ability to diagnose root causes of accidents has been tested using the main steam and feedwater condensate systems of a full-scale, three-loop, 950 MW nuclear power plant simulated by the Tsinghua simulator. So far the results seem good.     

Purification and renaturation of recombinant human lymphotoxin (tumour necrosis factor beta) expressed in Escherichia coli as inclusion bodies

High level expression of recombinant human tumour necrosis factor β (rh TNF-β) in Escherichia coli results in the formation of two portions of protein, namely soluble active protein and insoluble protein which is inactive and aggregates in the form of inclusion bodies (IBs). In this study, a procedure for purification and renaturation of rh TNF-β from inclusion bodies has been designed and verified experimentally with a product purity of more than 90% and a recovery of about 30%. The procedure includes washing of IBs with specific wash buffer (Triton X-100/EDTA/lysozyme/PMSF), their solubilization with 8 mol dm^?3 alkaline urea, purification with ion-exchange columns, refolding with renaturation buffer and finally concentration and desalination with an ultrafiltration membrane. The characteristics of the renatured protein were identical with those of purified protein from the soluble fraction as demonstrated by (1) SDS-PAGE, (2) cytotoxic activity on mouse L929 cells, (3) N-terminal amino acid sequence, and (4) gel filtration chromatography.     

由ZF—6玻璃片构成的磁光旋转器

所提出的磁光旋转器是由Ｖｅｒｄｅｔ常数小的普通ＺＦ－６小玻璃片和带有窄缝隙的小电磁铁组成，当电磁铁线圈的功耗为１０Ｗ时，可得到２１°的法拉第旋转。     

Monolithic SiGe Up‐/Down‐Conversion Mixers with Active Baluns

The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on‐chip 1 to 6 GHz up‐conversion and 1 to 8 GHz down‐conversion mixers using a 0.8 µm SiGe hetero‐junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up‐conversion mixer was implemented on‐chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up‐conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down‐conversion mixer was implemented on‐chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down‐conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz.