Effect of film thickness on hydrogen content in a-Si : H

The hydrogen content, its depth distribution, and its bonding configuration have been studied in hydrogenated amorphous silicon prepared by plasma-enhanced chemical vapor deposition with hydrogen-diluted silane. Nuclear reaction analysis and infrared spectroscopy were used to determine the total amount of hydrogen and its bonded component, respectively. It has been established that the total concentration of hydrogen does not depend on the film thickness, and has a uniform depth profile. The concentration of bonded hydrogen changes with the film thickness within the measurement accuracy. The data obtained suggest the presence of molecular (non-bonded) hydrogen, uniformly distributed in concentration across the film thickness.     

Lateral ion implant straggle and mask proximity effect

Lateral scattering of retrograde well implants is shown to have an effect on the threshold voltage of nearby devices. The threshold voltage of both NMOSFETs and PMOSFETs increases in magnitude for conventional retrograde wells, but for triple-well isolated NMOSFETs the threshold voltage decreases for narrow devices near the edge of the well. Electrical data, SIMS, and SUPREM4 simulations are shown that elucidate the phenomenon.     

Unified Systolic-Like Architecture for DCT and DST Using Distributed Arithmetic

A common computing-core representation of the discrete cosine transform and discrete sine transform is derived and a reduced-complexity algorithm is developed for computation of the proposed computing-core. A parallel architecture based on the principle of distributed arithmetic is designed further for the computation of these transforms using the common-core algorithm. The proposed scheme not only leads to a systolic-like regular and modular hardware for computing these transforms, but also offers significant improvement in area-time efficiency over the existing structures. The structure proposed here is devoid of complicated input/output mapping and does not involve any complex control. Unlike the convolution-based structures, it does not restrict the transform length to be a prime or multiple of prime and can be utilized as a reusable core for cost-effective, memory-efficient, high-throughput implementation of either of these transforms     

A New Hand-Held Microsystem Architecture for Biological Analysis

This paper presents a hand-held microsystem based on new fully integrated magnetoresistive biochips for biomolecular recognition (DNA hybridization, antibody antigen interaction, etc.). Magnetoresistive chip surfaces are chemically treated, enabling the immobilization of probe biomolecules such as DNA or antibodies. Fluid handling is also integrated in the biochip. The proposed microsystem not only integrates the biochip, which is an array of 16times16 magnetoresistive sensors, but it also provides all the electronic circuitry for addressing and reading out each transducer. The proposed architecture and circuits were specifically designed for achieving a compact, programmable and portable microsystem. The microsystem also integrates a hand-held analyzer connected through a wireless channel. A prototype of the system was already developed and detection of magnetic nanoparticles was obtained. This indicates that the system may be used for magnetic label based bioassays     

An optically clocked transistor array with dual serial-to-parallel and parallel-to-serial conversion capability for optical label swapping

We propose an optically clocked transistor array optoelectronic integrated circuit (OEIC) for both serial-to-parallel and parallel-to-serial conversion (demux/mux), enabling an interface between high-speed asynchronous burst optical labels and CMOS circuitry for optical label swapping. Dual functionality of the OEIC reduces size, power, and cost of the optical label swapper. The capability for greater than 20-Gb/s conversion operation is demonstrated.     

The radiation resistance of an arbitrarily oriented electric dipole exciting a corner antenna or a plane screen

Rigorous analytic expressions for radiation resistance R _Σ of an electric dipole are obtained for three mutually orthogonal orientations of the dipole’s axis with respect to a plane metal screen or right-angle corner of infinite dimensions. Radiation resistance R _Σ of the dipole oriented arbitrarily in space is calculated and analyzed as a function of the distance from the screen.     

Operating Penalties in Single-Fiber Operation 10-Gb/s, 1024-Way Split, 110-km Long-Reach Optical Access Networks

We report for the first time optical signal-to-noise penalties which lead to performance degradations in single-fiber long-reach optical access networks when compared to identical dual-fiber systems. A simplified architecture, with reduced optical amplifier count compared to previous work, for single-fiber operation of a symmetrical 10-Gb/s, 1024-way split, 110-km long-reach optical access network is presented and demonstrated. In addition, a possible solution to remove the optical signal-to-noise penalty is suggested     

Multi-level attention model for tracking and segmentation of objects under complex occlusion

A multi-level attention framework for tracking and segmentation of humans and objects under complex occlusions is investigated, featuring an effective probabilistic appearance-based technique for pixel reclassification during object grouping and splitting. A novel ’spatial-depth affinity metric’ is introduced in the conventional likelihood function, utilising information of both spatial locations of pixels and dynamic depth ordering of the component objects in grouping. Depth ordering estimation is achieved through a combination of top-down and bottom-up approach. Experiments on some realworld difficult scenarios of low quality and highly compressed videos demonstrate the very promising results achieved.     

一种估算单桩经济直径的方法

在滩海油田开发过程中,经常需要设立立管桩,在环境荷载的作用下,立管桩顶部会发生位移,较大的位移对立管及栈桥的安全很不利,因此需要合理确定单桩的直径。埕岛油田在确定单桩直径时引入了经济直径的概念,文章对经济直径的原理进行了分析,给出了桩顶位移和桩径经济指数计算公式,并举例进行了计算,得出了桩径与桩顶位移及桩径经济指数的关系曲线, 进而求得经济桩径的取值范围。文章还对该方法的优缺点进行了分析。     

Electrical Properties of GeO2–NiO Materials Containing Ni2GeO4

The GeO₂–NiO system is studied in the stability range of Ni₂GeO₄ by temperature-dependent resistivity measurements, in combination with x-ray diffraction, differential thermal analysis, and thermogravimetry. The resistivity of the starting mixtures and heat-treated samples is measured in the composition range 55–90 mol % NiO. The effect of air humidity on the resistivity of the samples is examined.