中型孔径小梯段露天石方深孔水压爆破

介绍了一种石方开挖新技术－－露天石方深孔水压爆破技术。用试验的方法，通过和常规石方爆破进行类比，从而研究了此项新技术在中型孔径小梯段应用条件下的各种爆破参数，并进行了定性和定量分析，得到了一些初步的结论。     

创新铁路运输方式实现750m^3高炉富余铁水分流

针对750m^3高炉铁水生产富余状况，制订了富余铁水向铸铁机铸铁的调送方案，通过创新思维、系统挖潜、优化资源配置等措施的实施，保证了750m^3高炉的正常生产，取得了良好效果。     

3 200 m3高炉工程高炉基础施工技术

3 200 m3高炉基础施工,混凝土浇注量大、模板安装量大,钢筋加工、绑扎量大,如何组织好各工序的施工管理是工程的关键.着重描述了该工程的施工、技术、质量等方面的管理方法,取得了较好的效果.     

舰用燃气轮机框架模型的模态参数识别

本文采用一次有理正交多项式－多模态曲线合法对一舰用燃气轮机框架模型进行了实验模态分析，以Ｆｏｒｓｙｔｈｅ复合交多项式作为频响函数的理论值，用实测的频响函数建立系数矩阵，来寻找使目标函数最小的最优值，本文在ＨＰ９８２６微机上建立了建立了测试，数据采集及参数识别等系统识别软件，给出了具有工程实用意义的前五阶振动模态参数，识别结果和有限元计算相比较，令人满意。     

Excavation of Inlet Tunnels at Geheyan Power Station

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Synthesis,Functionalization, and Bioconjugation of Monodisperse,Silica‐Coated Gold Nanoparticles: Robust Bioprobes

Herein, we report an efficient process for preparing monodisperse Au@SiO₂ nanoparticles using homogeneous shaking and without the use of surface‐coupling silane agents or large stabilizers. The resulting pure‐silica surface of the Au@SiO₂ nanoparticles is very important for straightforward surface functionalization with different functional groups via well‐established silica surface chemistry. Subsequent covalent bioconjugation of the aldehyde‐functionalized Au@SiO₂ nanoparticles with various biomolecules is successfully employed to make robust nanoprobes for fast, colorimetric DNA and protein detection based on the sequence‐specific hybridization properties of DNA and the specific binding affinity between proteins, respectively.     

微波场中光纤探头温升的研究

当把光纤温度传感器置于微波场中测温时，由于受电磁场的作用，传感头内部将有能量损耗，以致发生测温偏差。本文将传感头简化成有限长圆柱，计算出在微波场中传感头的能量损耗和温度变化。最后还分析了一种实际热色效应光纤温度传感器。     

A self-aligned gate III-V heterostructure FET process forultrahigh-speed digital and mixed analog/digital LSI/VLSI circuits

A planar ion-implanted self-aligned gate process for the fabrication of high-speed digital and mixed analog/digital LSI/VLSI integrated circuits is reported. A 4-b analog-to-digital converter, a 2500-gate 8×8 multiplier/accumulator, and a 4500-gate 16×16 complex multiplier have been demonstrated using enhancement-mode n⁺ -(Al,Ga)As/MODFETs, superlattice MODFETs, and doped channel heterostructure field-effect transistors (FETs) whose epitaxial layers were grown by molecular-beam epitaxy. With nominal 1-μm gate-length devices, direct-coupled FET logic ring oscillators with realistic circuit structures have propagation delays of 30 ps/stage at a power dissipation of 1.2 mW/stage. In LSI circuit operation, these gates have delays of 89 ps/gate at a power dissipation of 1.38 mW/gate when loaded with an average fan-out of 2.5 gates and about 1000 μm of high-density interconnects. High-performance voltage comparator circuits operated at sampling rates greater than 2.5 GHz at Nyquist analog input rates and with static hysteresis of less than 1 mV at room temperature. Fully functional 4-b analog-to-digital circuits operating at frequencies up to 2 GHz were obtained