Preparation of patterned SiC and SiCN microstructures

With the development of modern science and technology, the importance of small structures or microstructures (such as the fluidic nanostructure or microreactor[1], the in- tegrate circuit in microelectronics[2], the factory in a chip[3,4], etc.) has been incarnated day by day in the fields of microelectronics, micro-optical systems, microanalytical sys- tems, microelectromechanical systems and cytobiology. And the fabrication technique (microfabrication) of the small structures has become the h…     

基于子结构的内力约束连续体拓扑优化

通过拓扑优化可以得到传力路径,不同传力路径对应不同内力载荷。如果将内力载荷作为目标或约束进行拓扑优化,可以得到满足不同需求的传力路径,为拓扑优化的发展提供新思路和新方法。为了得到不同内力载荷需求的传力路径,基于子结构法将结构分开使内力暴露出来。以结构质量最小为目标,以内力为约束建立拓扑优化模型,基于独立、连续、映射( independent, continuous, mapping, ICM)方法和单位载荷法将内力显式化,通过累加获得需要控制的传力路径上的内力,通过迭代调整2个路径上的内力使其比值达到一个稳定的值,从而获得满足内力约束的传力路径。算例表明：不同的内力约束可以得到不同的传力路径。     

大型汽轮发电机主绝缘耐压和电老化试验中定子线棒端部防晕技术的研究

大型汽轮发电机在主绝缘耐压和电老化试验中,可能出现定子线棒端部闪络和防晕层过热的情况,从而损伤主绝缘,影响试验顺利进行。本文通过建立真机线棒端部的Pspice仿真模型,模拟了线棒端部绝缘表面电场分布,分析了端部闪络的原因。通过进一步的仿真研究,提出了线棒端部防晕的技术方案,并试制了线棒端部防晕装置。试验结果表明,该防晕装置可有效防止线棒端部闪络和防晕层过热。     

表面含有半导电层的高压绝缘结构的电场的有限元分析

表面半导电层结构可以均匀电场和抑制表面电晕放电,因此被广泛应用于高压电力电缆接头和高压发电机定子线圈端部绝缘中。由于表面半导电层比主绝缘层薄得多,在应用有限元法进行分析时存在着分析区域难剖分的缺点。本文经过一个简单的分析实例,提出了表面含有半导电层的高压绝缘结构电场的有限元分析方法。     

系统保压阀在冰箱中的应用

针对某款冰箱通过冷凝器保压技术降低冰箱能耗.验证了不同环温、阀泄漏量、压缩机延迟开启时间对能耗降低程度的影响.另外在化霜前关闭电磁阀,抽取蒸发器中剩余冷媒,降低化霜能耗,优化整机能效.结果证明:1.不同环温下高压侧压力降低的幅度相近,保压阀对能耗的改善量差别不大;2.阀提前开启时间越短对降低能耗越有利;3.阀泄漏量降低...     

孤岛运行方式下微电网储能系统能量成型控制策略

在分析微电网储能系统(ESS)结构的基础上,建立了微电网ESS的端口受控哈密顿(PCH)模型,设计了PCH控制器,确定了期望平衡点,给出了微电网ESS的能量成型控制策略。建立含可再生能源发电单元和ESS的微电网仿真模型对所提策略进行仿真,仿真结果表明,与典型PI闭环线性控制策略相比,所提控制策略在孤岛运行期间能很好地满足对ESS的控制要求,且具有更好的快速性、鲁棒性。     

Enhancement of Ferroelectric Properties of Pb(Zr,Ti)O3 Films Grown by Metal-Organic Chemical Vapor Deposition on Noble-Alloy Bottom Electrodes

Pb(Zr,Ti)O₃ (PZT) films grown on Ir electrodes by a metal-organic chemical vapor deposition (MOCVD) have suffered from high leakage and rough surface. We sputtered Pt and Ir simultaneously onto Ti/SiO₂/Si substrates and formed Ir-Pt alloy bottom electrodes with various compositions. With an optimal composition of Ir and Pt, PZT films grown by MOCVD on this substrate showed smoother surface and suppressed leakage via the bottom interface. At the specific composition of Ir and Pt, two different phases seemed to be acquired. They constituted the electrodes and affected the PZT grain nucleation independently so that the grains with different origins grew and restrained the vicinal grains, and finally soothed the faceted-grain-formation. No fatigue was observed even in PZT on Ir-Pt alloy with much Pt content.     

STRESS CONTROLLED FERROELECTRIC (BA0.5Sr0.5)TiO3 THIN FILMS PREPARED ON GD2O3/SRTiO3(001) BY A PULSED LASER DEPOSITION

ABSTRACT

Stress controlled epitaxial ferroelectric Ba_0.5Sr_0.5TiO₃ (BST) films have been deposited on Gd₂O₃/SrTiO₃ by pulsed laser deposition with oxygen background pressure of 200 mTorr at the deposition temperature of 750°C. In order to control the stress in BST films, oxygen pressures for Gd₂O₃ buffer layers have been varied from 0.1 to 100 mTorr, while that of BST films have been fixed at 200 mTorr. It has been found that the lattice parameters of the BST films deposited on Gd₂O₃ were changed. Furthermore, microwave properties of co-planar waveguide (CPW) fabricated on BST films were investigated by a HP 8510C vector network analyzer from 1–20 GHz. Large dielectric tunabilities were observed from the CPW's fabricated on BST films deposited on Gd₂O₃ layers deposited at low and high oxygen pressures, 0.1 and 100 mTorr, respectively.