Finite multidimensional behaviors

We study finitely generated and finite systems defined by linear partial difference equations with constant coefficients in a Noetherian ring. The two notions coincide for finite rings, and we show that all finite systems exhibit certain periodicity properties. For the particular case of systems over the ring of integers modulo m?>?1, which is important in coding theory, a method is given for determining the number of trajectories, using Gr?bner basis techniques.     

Reversible Amorphous‐to‐Amorphous Transitions in Chalcogenide Films: Correlating Changes in Structure and Optical Properties

Structural transitions in materials are accompanied by appreciable and exploitable changes in physical‐chemical properties. Whereas reversible optically‐driven atomistic changes in crystal‐to‐amorphous transitions are generally known and exploited in applications, the nature of the corresponding polyamorphic transitions between two structurally distinct meta‐stable amorphous phases is an unexplored theme. Direct experimental evidence is reported for the nature of the atomistic changes during fully reversible amorphous‐to‐amorphous switching between two individual states in the non‐crystalline As₅₀Se₅₀ films prepared by pulsed‐laser deposition and consequent changes in optical properties. Combination of surface sensitive X‐ray photoelectron spectroscopy and spectroscopic ellipsometry show that the near‐bandgap energy illumination and annealing induce reversible switching in the material's structure by local bonding rearrangements. This is accompanied by switching in refractive index between two well‐defined states. Exploiting the pluralism of distinct structural states in a disordered solid can provide new insights into the data storage in emerging optical memory and photonic applications.     

Hydrogenated amorphous semiconductors

Solar cells based on hydrogenated amorphous silicon are now made from a variety of materials including alloys and microcrystalline films. Research aimed at improving cell efficiency should emphasize studies of alloys and metastable defects. We discuss several research topics related to the growth, structure, and electronic properties of these materials, which should lead to improved photovoltaic devices.     

Photovoltaic Devices: Highly Conductive PEDOT:PSS Electrode with Optimized Solvent and Thermal Post‐Treatment for ITO‐Free Organic Solar Cells (Adv. Funct. Mater. 6/2011)

Highly conductive poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) films as stand‐alone electrodes for organic solar cells have been optimized using a solvent post‐treatment method. The treated PEDOT:PSS films show enhanced conductivities up to 1418 S cm^?1, accompanied by structural and chemical changes. The effect of the solvent treatment on PEDOT:PSS has been investigated in detail and is shown to cause a reduction of insulating PSS in the conductive polymer layer. Using these optimized electrodes, ITO‐free, small molecule organic solar cells with a zinc phthalocyanine (ZnPc):fullerene C₆₀ bulk heterojunction have been produced on glass and PET substrates. The system was further improved by pre‐heating the PEDOT:PSS electrodes, which enhanced the power conversion efficiency to the values obtained for solar cells on ITO electrodes. The results show that optimized PEDOT:PSS with solvent and thermal post‐treatment can be a very promising electrode material for highly efficient flexible ITO‐free organic solar cells.     

A low-voltage 40-GHz complementary VCO with 15% frequency tuning range in SOI CMOS technology

The design of a low-voltage 40-GHz complementary voltage-controlled oscillator (VCO) with 15% frequency tuning range fabricated in 0.13-/spl mu/m partially depleted silicon-on-insulator (SOI) CMOS technology is reported. Technological advantages of SOI over bulk CMOS are demonstrated, and the accumulation MOS (AMOS) varactor limitations on frequency tuning range are addressed. At 1.5-V supply, the VCO core and each output buffer consumes 11.25 mW and 3 mW of power, respectively. The measured phase noise at 40-GHz is -109.73 dBc/Hz at 4-MHz offset from the carrier, and the output power is -8 dBm. VCO performance using high resistivity substrate (/spl sim/300-/spl Omega//spl middot/cm) has the same frequency tuning range but 2 dB better phase noise compared with using low resistivity substrate (10 /spl Omega//spl middot/cm). The VCO occupies a chip area of only 100 /spl mu/m by 100 /spl mu/m (excluding pads).     

Magnetoluminescence properties of Hg1−xCdxTe epitaxial layers and superlattice structures grown by metalorganic molecular beam epitaxy

We present a study of the electro-optical properties ofHg _1- xCd_xTe epitaxial layers and Hg_1-x Cd_xTe/CdTe (0.28 < x < 0.30) superlattice structures by x-ray diffraction, lateral transport and photo- and magneto-luminescence measurements. Systematic studies of the excitation intensity and magnetic field dependence of the photoluminescence revealed direct evidence of an excitonic contribution to the observed luminescence in Hg_{1- x}Cd_xTe epitaxial layers. Similar investigations of the superlattice structures indicated that excitonic corrections were required to adequately fit the luminescence data. Optical gains of 80 cm⁻¹ were obtained for an excitation intensity of 100 kW/cm² indicating suitable electro-optical properties for making efficient mid-infrared laser diodes.     

A wavelet-based method for multiscale tomographic reconstruction

The authors represent the standard ramp filter operator of the filtered-back-projection (FBP) reconstruction in different bases composed of Haar and Daubechies compactly supported wavelets. The resulting multiscale representation of the ramp-filter matrix operator is approximately diagonal. The accuracy of this diagonal approximation becomes better as wavelets with larger numbers of vanishing moments are used. This wavelet-based representation enables the authors to formulate a multiscale tomographic reconstruction technique in which the object is reconstructed at multiple scales or resolutions. A complete reconstruction is obtained by combining the reconstructions at different scales. The authors' multiscale reconstruction technique has the same computational complexity as the FBP reconstruction method. It differs from other multiscale reconstruction techniques in that (1) the object is defined through a one-dimensional multiscale transformation of the projection domain, and (2) the authors explicitly account for noise in the projection data by calculating maximum a posteriori probability (MAP) multiscale reconstruction estimates based on a chosen fractal prior on the multiscale object coefficients. The computational complexity of this maximum a posteriori probability (MAP) solution is also the same as that of the FBP reconstruction. This result is in contrast to commonly used methods of statistical regularization, which result in computationally intensive optimization algorithms.     

Can Markov regime-switching models improve power-price forecasts? Evidence from German daily power prices

Non-linear autoregressive Markov regime-switching models are intuitive. Time-series approaches for the modelling of electricity spot prices are frequently proposed. In this paper, such models are compared with an ordinary linear autoregressive model with regard to their forecast performances. The study is carried out using German daily spot-prices from the European Energy Exchange in Leipzig. Four non-linear models are used for the forecast study. The results of the study suggest that Markov regime-switching models provide better forecasts than linear models.     

On the mechanism for interface trap generation in MOS transistorsdue to channel hot carrier stressing

The classical concept and theory suggest that the degradation of MOS transistors is caused by interface trap generation resulting from “hot carrier injection.” We report three new experiments that use the deuterium isotope effect to probe the mechanism for interface trap generation in n-MOS transistors in the presence of hot hole and electron injection. These experiments show clearly that hot carrier injection into the gate oxide exhibits essentially no isotope effect, whereas channel hot electrons at the interface exhibit a large isotope effect. This leads to the conclusion that channel hot electrons, not carriers injected into the gate oxide, are primarily responsible for interface trap generation for standard hot carrier stressing