Implicit integration and consistent tangent modulus of a time‐dependent non‐unified constitutive model

This paper describes the implicit integration and consistent tangent modulus of an inelastic constitutive model with transient and steady strain rates, both of which are time‐ and temperature‐dependent; the transient rate is influenced by the evolution of back stress decomposed into parts, while the steady rate depends only on applied stress and temperature. Such a non‐unified model is useful for high‐temperature structural analysis and is practical owing to the ease in determining material constants. The implicit integration is shown to result in two scalar‐valued coupled equations, and the consistent tangent modulus is derived in a quite versatile form by introducing a set of fourth‐rank constitutive parameters into the discretized evolution rule of back stress. The constitutive model is, then, implemented in a finite element program and applied to a lead‐free solder joint analysis. It is demonstrated that the implicit integration is very accurate if the multilinear kinematic hardening model of Ohno and Wang is employed, and that the consistent tangent modulus certainly affords quadratic convergence to the Newton–Raphson iteration in solving nodal force equilibrium equations. Copyright © 2003 John Wiley & Sons, Ltd.     

A Tuning Circuit with Two Half-Wave Distributed Junctions for All-NbN SIS Mixers

A novel broadband tuning circuit composed of two low-current-density half-wave NbN/MgO/NbN tunnel junctions connected by a half-wave NbN/MgO/NbN microstrip line has been successfully tested in a quasi-optical mixer at frequencies above 700 GHz. The circuit had a designed center frequency of 870 GHz, was integrated in a center-fed twin-slot antenna, and was fed via a quarter-wave impedance transformer. Heterodyne measurments showed double-side-band receiver noise temperatures equivalent to 6-9 quanta from 675 to 810 GHz for a mixer with a current density of 6.7 kA/cm². The RF bandwidth was broader than that of a conventional mixer using a full-wave junction with the same current density.     

A new voltage control equipment using fuzzy inference

Power system control equipment needs higher sensitivity and operational reliability. Advanced voltage control equipment is needed for reducing the frequency of tap changes and improving the characteristics (the relationship between the actual voltage and reference voltage) of the voltage to meet today's power system requirements. However, these objectives are in a trade-off relationship. Studies of voltage control derived from a knowledge base suitable for electric power systems can satisfy these objectives using fuzzy inference. Compared with corresponding conventional equipment, the new equipment improved the deviation of 30 min average voltage of 30 percent. This paper describes the design concept of new voltage control equipment using fuzzy inference. In addition, field test results are described along with rules of fuzzy inference, membership functions, and the deviation of 30 min average voltage through detailed simulation.     

Changes in the thermomechanical behavior of epoxy glasses under the state of strain aging

Changes in thermomechanical behavior with structural relaxation taking place in epoxy glasses were studied. Differential scanning calorimetry measurements and thermostimulated strain recovery tests were performed for specimens deformed and then aged under fixed strain. In the course of heating, the specimens started to absorb thermal energy, whereas plastic strain was still stable. At higher temperatures, plastic strain started recovery, which was accompanied by exothermic behavior of the specimen. With an increase in the aging duration, the endothermic peak signified and moved to a higher temperature. These results indicated that the longer the aging duration was, the harder the plastic strain and strain energy were frozen in the glassy structure. This freeze‐strain phenomenon was observed for crosslinked epoxy glass, as well as polymeric glasses with linear molecular structures, aged under strain. © 2007 Wiley Periodicals, Inc. J Appl Polym Sci, 2008     

Heavy arsenic doping of silicon grown by atmospheric pressure selective epitaxial chemical vapor deposition

Selective epitaxial Si with a high arsenic concentration of 2.2×10¹⁹ atoms/cm³ was deposited at a high growth rate of 3.3 nm/min under atmospheric pressure. It was confirmed that this method had excellent selectivity and produced films having good crystalline quality, abrupt dopant profiles at the interfaces, and smooth surfaces. The growth mechanism is discussed in terms of the relationship between the effects of arsenic surface segregation and etching by hydrogen chloride.     

Spontaneous hemorrhage of an adrenal cortical adenoma causing Cushing''s syndrome

A modified surgical splint for Le Fort I osteotomies with transverse expansion is presented. The splint is made of a transpalatal stainless steel bar with acrylic abutment against the palatal surface of the molar and bicuspid tooth. It is rigid and renders excellent retention. It causes minimal patient discomfort, and oral hygiene is hardly compromised.     

Polarization-controlled single-mode VCSEL

Relative intensity noise (RIN) in a vertical-cavity surface-emitting laser (VCSEL) was greatly reduced through the use of polarization control to eliminate competition between two orthogonal polarization states by ensuring there was only one polarization state. Polarization was stable with optical feedback of up to 10%. Polarization control was achieved by inducing a small loss anisotropy in fundamental transversal mode VCSEL's. Anisotropic post structures, such as a rectangular post, an oblique post, or a zigzag-sidewall post, were found to be effective in creating loss anisotropy without serious degradation of other VCSEL characteristics such as light-output power or beam profile     

Room temperature pulsed operation of 1.5 μm GaInAsP/InPvertical-cavity surface-emitting laser

Room-temperature pulsed operation of a GaInAsP/InP vertical-cavity surface-emitting laser diode (VCSELD) with an emission wavelength near 1.55 μm is reported. A double heterostructure with a 34-pair GaInAsP (λ_g=1.4 μm)/InP distributed Bragg reflector (DBR) was grown by metalorganic chemical vapor deposition (MOCVD). The measured reflectivity of the semiconductor DBR is over 97% and threshold current is 260 mA for a 40-μmφ device with a 0.88-μm-thick active layer. Threshold current density is as low as 21 kA/cm² at room temperature     

Advanced concepts in electric vehicle design

In 1994, the Eco-Vehicle Project was begun to develop an electric vehicle (EV) using a ground-up design approach that incorporates unique designs specific to an EV. The Eco-Vehicle will be a high-performance, but ultrasmall, battery-powered vehicle. New designs for the Eco-Vehicle include an in-wheel motor drive system, a hollow load floor which will house the batteries, and a new battery management system. The Eco-Vehicle may also utilize other advanced concepts suitable especially for EVs, including solar panels for battery charging and intelligent crash avoidance and guidance systems     

Electrical properties at p-ZnSe/metal interfaces

In order to prepare low resistance ohmic contacts to p-ZnSn by the “deposition and annealing (DA)” technique which has been extensively used for GaAs and Si-based devices, formation of a heavily doped layer by the p-ZnSe/metal reaction is required. For p-ZnSe/Ni contacts, Ni and Se reacted preferentially at the ZnSe/Ni interface upon annealing at temperatures higher than 250°C. However, capacitance-voltage measurements showed that the net acceptor concentration (N_A-N_D) close to the p-ZnSe/Ni interface was reduced upon the Ni/ZnSe reaction, resulting in high contact resistance. For p-ZnSe/Au contacts, neither Au/ZnSe reaction nor reduction of the acceptor concentration were observed after annealing at temperatures lower than 300°C. This indicates that although the metal/p-ZnSe reaction is mandatory to prepare a heavily doped layer, the reaction induced an increase in the compensation donors in the p-ZnSe substrate. In order to increase the acceptor concentration in the vicinity of the p-ZnSe/metal interface through diffusion from the contact materials, Li or O which was reported to play the role of an acceptor in ZnSe was deposited with a contact metal and annealed at elevated temperatures. Ni or Ag was selected as the contact metal, because these metals were expected to enhance Li or O doping by reacting with ZnSe. However, the current density-voltage characteristics of the Li(N)/Ni and Ag(O) contacts exhibited rectifying behavior, and the contact resistances increased with increasing annealing temperature. The present results indicated that, even though the acceptor concentration in the p-ZnSe substrate increased by diffusion of the dopants from the contact elements, an increment of the compensation donors was larger than that of the acceptors. The present experiments indicated that preparation of low resistance ohmic contacts by forming a heavily doped intermediate layer between p-ZnSe and metal is extremely difficult by the DA technique.