Reaction chemistry and resulting surface structure of HgCdTe etched in CH4/H2 and H2 ECR plasmas

We report on several new aspects of etching of Hg_1−xCd_xTe (x = 0.22), HgTe, and CdTe in CH₄/H₂/Ar plasmas generated by an electron cyclotron resonance plasma source. Using a residual gas analyzer, we have identified elemental Hg, TeH₂, Te(CH₃)₂, and Cd(CH₃)₂ as the primary reaction products escaping from a HgCdTe surface during the plasma exposure. We have also demonstrated that a bias is not needed to etch HgCdTe at moderate temperatures (30-40°C), as previously suggested by other researchers. We have also developed a technique that avoids the formation of hydrocarbon polymer films on a HgCdTe sample during etching. Moreover, we have examined by x-ray photoelectron spectroscopy analysis and ellipsometry the surface condition of HgCdTe resulting from etching with this technique at zero bias. After exposure to the CH₄/H₂Ar plasma (or to a H₂/Ar plasma only), the HgCdTe samples exhibited a depletion of the HgTe component in the near surface region (increase of the x-value). The depletion covered a range from virtually x = 1 after H₂/Ar (10:2 in sccm) etching to values 0.4 < x < 0.5 after CH₄/H₂Ar (7:7:2 in seem) etching. Exposures to the plasmas were found to result in surface roughening of HgCdTe, however, plasmas rich in H₂ were observed to cause significantly rougher surfaces than plasmas with small H₂/CH₄ ratios. This difference in the resulting surface condition is attributed solely to chemical effects since the respective ion energies are considered to be below the damage threshold for HgCdTe in both cases. We also investigated the etching of HgTe and CdTe single crystals. The etch rate of HgTe was found to be over one order of magnitude higher than that of CdTe under similar conditions. This large difference in etch rates is assumed to be responsible for the observed preferential etching of the HgTe component indicated by the HgTe depletion of the HgCdTe surface region.     

A Direct Approach to Organic/Inorganic Semiconductor Hybrid Particles via Functionalized Polyfluorene Ligands

Controlled Suzuki–Miyaura coupling polymerization of 7′‐bromo‐9′,9′‐dioctyl‐fluoren‐2′‐yl‐4,4,5,5‐tetramethyl‐[1,3,2]dioxaborolane initiated by bromo(4‐tert‐butoxycarbonylamino‐phenyl)(tri‐tert‐butylphosphine)palladium ( 1 ) or bromo(4‐diethoxyphosphoryl‐phenyl)(tri‐tert‐butylphosphine)palladium ( 2 ) yields functionalized polyfluorenes (M_n = 4 × 10³ g mol^?1, M_w/M_n < 1.2) with a single amine or phosphonic acid, respectively, end‐group. High temperature synthesis of cadmium selenide quantum dots with these functionalized polyfluorenes as stabilizing ligands yields hybrid particles consisting of good quality (e.g. emission full width at half maximum of 30 nm; size distribution σ < 10%) inorganic nanocrystals with polyfluorene attached to the surface, as corroborated by transmission electron microscopy analysis and analytical ultracentrifugation. Sedimentation studies on particle dispersions show that a substantial portion (ca. half) of the phosphonic acid terminated polyfluorene ligands is bound to the inorganic nanocrystals, versus ca. 5% for the amino‐functionalized polyfluorene ligands. Single particle micro‐photoluminescence spectroscopy shows an efficient and complete energy transfer from the polyfluorene layer to the inorganic quantum dot.     

Cleaved and etched facet nitride laser diodes

Room-temperature (RT) pulsed operation of blue (420 nm) nitride-based multiquantum-well laser diodes grown on a-plane and c-plane sapphire substrates has been demonstrated. Structures investigated include etched and cleaved facets as well as doped and undoped quantum wells. A combination of atmospheric and low-pressure metal organic chemical vapor deposition using a modified two-flow horizontal reactor was employed. Threshold current densities as low as 12.6 kA/cm² were observed for 10×1200 μm lasers with uncoated reactive ion etched facets on c-plane sapphire. Cleaved facet lasers were also demonstrated with similar performance on a-plane sapphire. Laser diodes tested under pulsed conditions operated up to 6 h at RT. Lasing was achieved up to 95°C and up to a 150-ns pulselength (RT). Threshold current increased with temperature with a characteristic temperature T₀ of 114 K     

Timing jitter and pump-induced amplitude modulation in thecolliding-pulse mode-locked (CPM) laser

The timing jitter and spurious amplitude modulation of colliding-pulse mode-locked (CPM) lasers were measured. The absolute jitter (the jitter of the laser alone) varied between 5 and 10 ps RMS in a 50-500-Hz bandwidth. The smallest measured relative jitter (timing fluctuations between the CPM and a radio-frequency (RF) synthesizer synchronized to the CPM) was 1.8 ps RMS in a 2-Hz to 1-kHz bandwidth. Separate from the jitter, spurious modulation in the CW pump laser mixes with the CPM pulse train to produce a set of discrete amplitude-modulated sidebands in the power spectrum of the CPM output. The frequencies of these sidebands change with cavity length, and the sidebands can be eliminated by operating the pump laser in a single longitudinal mode     

Poly(3-hexylthiophene)/C60 heterojunction solar cells: Implication of morphology on performance and ambipolar charge collection

The performance of heterojunction organic solar cells is critically dependent on the morphology of the donor and acceptor components in the active film. We report results of photovoltaic devices consisting of bilayers and bulk heterojunctions using poly(3-hexylthiophene) (P3HT) and Buckminsterfullerene C₆₀. White light power efficiencies of η2.2% (bulk heterojunction) and 2.6% (bilayer) were measured after a thermal annealing step on completed devices. Optical and structural investigations on non-annealed bilayer thin films indicated a distinct porosity of the spin-coated polymer, which allows C₆₀ to penetrate the P3HT layer and to touch the anode. This resulted for these bilayer solar cells in the experimental observation that electrons were collected predominantly at the cathode after photo-excitation of P3HT, but predominantly at the anode after C₆₀ excitation. A morphological model to explain the ambipolar charge collection phenomenon is proposed.     

Convergence of Broadcast and New Telecom Networks

The demand of the new telecom industry for cost efficient provision of mobile multimedia services is faced with the reality of scarce radio resources. The requirement of spectrum efficiency has driven the development of various digital radio technologies that have been optimized for specific services, namely for broadcast or for mobile communication. However, existing and emerging multimedia services exhibit challenging requirements in terms of asymmetry, interactivity, real-time, and multicast communication. This paper describes an IP based multi-radio infrastructure that enables the co-operation of existing radio networks to combine their capabilities to ensure a spectrum efficient provision of high-quality mobile multimedia services. Further the need for a dynamic allocation of spectrum to radio services is motivated. The basic functionality and the architecture of a multi-radio system is outlined, with a special emphasis on the cooperation between different radio systems. Further an evolution path for the convergence of broadcast and new telecom is desribed, starting from today's systems and leading to a fully coordinated system.     

Sliding mode closed-loop control of FES: controlling the shank movement

Functional electrical stimulation (FES) enables restoration of movement in individuals with spinal cord injury. FES-based devices use electric current pulses to stimulate and excite the intact peripheral nerves. They produce muscle contractions, generate joint torques, and thus, joint movements. Since the underlying neuromuscular-skeletal system is highly nonlinear and time-varying, feedback control is necessary for accurate control of the generated movement. However, classical feedback/closed-loop control algorithms have so far failed to provide satisfactory performance and were not able to guarantee stability of the closed-loop system. Because of this, only open-loop controlled FES devices are in clinical use in spite of their limitations. The purpose of the reported research was to design a novel closed-loop FES controller that achieves good tracking performance and guarantees closed-loop stability. Such a controller was designed based on a mathematical neuromuscular-skeletal model and is founded on a sliding mode control theory. The controller was used to control shank movement and was tested in computer simulations as well as in actual experiments on healthy and spinal cord injured subjects. It demonstrated good robustness, stability, and tracking performance properties.     

2.1 A/mm current density AlGaN/GaN HEMT

The electrical performance of high current density AlGaN/GaN HEMTs is reported. 2 /spl times/ 75 /spl mu/m /spl times/ 0.7 /spl mu/m devices grown on sapphire substrates showed current densities up to 2.1 A/mm under 200 ns pulse condition. RF power measurements at 8 GHz and V/sub DS/=15 V exhibited a saturated output power of 3.66 W/mm with a 47.8% peak PAE.