Growth structure investigation of MgF2 and NdF3 films grown by molecular beam deposition on CaF2(111) substrates

The growth structure of MgF₂ and NdF₃ films grown on polished CaF₂(111) substrates deposited by molecular beam deposition has been investigated using transmission electron microscopy (TEM) of microfractographical and surface replications as well as cross-sectional TEM, atomic force microscopy, packing density, and absorption measurements. It has been shown that by taking advantage of ultrahigh vacuum environments and a special stratification property of MgF₂ and NdF₃ films, the preparation of nanocrystalline films of high packing density and low optical absorption is possible at a substrate temperature of 425 K.     

The on-line texture analysis of steel strips

A new on-line texture-analyzing system and its application to nondestructive r value determination is discussed. In addition to providing a brief theoretical background and describing the instrumental set-up, the article presents off-line measurements with this equipment and demonstrates the high accuracy of the determined r-values. A special feature of the unit is the possibility to simultaneously measure the most important r values—r₀, r₄₅, r₉₀, and r_m.     

Formation of GaAsP interface layers monitored by reflectance anisotropy spectroscopy

Reflectance anisotropy spectroscopy (RAS) has been used to study As-by-P exchange during metalorganic vapor phase epitaxy. The study focuses on the processes occurring during switching from GaAs to GaInP, especially the effect of purging PH₃ over a GaAs surface. GaAsP/GaAs superlattices of different periodicity were grown and the P-content was determined by high-resolution x-ray diffraction and correlated to the RAS spectra. From the temperature dependence of the P-content, an activation energy of 0.56 eV was estimated for the incorporation mechanism. In addition to the insights into the processes at mixed group-V heterointerfaces, our study demonstrates the reproducibility of RAS transients that thus can be used for process monitoring.     

Transition metal- chalcogen systems XI: the platinum- selenium phase diagram

The platinum-selenium phase diagram was investigated by differential thermal analysis, metallography, and X-ray powder diffraction methods. The two previously known intermediate phases, Pt₅Se₄ and PtSe₂, both melt congruently: Pt₅Se₄ at ∼1070 °C and PtSe₂ (under its own vapor pressure) at 1245 ± 10 °C. Pt₅Se₄ forms a eutectic with Pt at 1065 ± 2 °C and ∼42 at % Se and another one with PtSe₂ at 1067 ± 2 °C and somewhat below 45 at.% Se. On cooling, Pt and PtSe₂ form a metastable eutectic at 1037 ± 2 °C and ∼43 at % Se. Between PtSe₂ and Se, a degenerate eutectic was found at 221 °C, which also indicates negligible solubility of platinum in solid selenium.     

Verbessertes Widerstandsgesetz für Stufendiffusoren

Zusammenfassung Es wird ein allgemeines Widerstandsgesetz für Stufendiffusoren hergeleitet, bei dem die Widerstandszahl den Zusatzverlust gegenüber den Verlusten der bis zum Kontursprung reichenden fiktiven Kanal- bzw. Rohrstr?mungen in der Zu- und Abstr?mung beschreibt. Unter vereinfachenden Annahmen reduziert sich dieses Gesetz auf die bekannte Carnot-Formel. Insbesondere wird dabei der Anteil des Zusatzverlustes, der vom Unterdruck an der Stufe und von der Wandschubspannungs?nderung unmittelbar hinter der Stufe herrührt, vernachl?ssigt. Die Berücksichtigung dieses Anteils führt zu einem gegenüber der Carnot-Formel verbesserten Widerstandsgesetz. Herrn Prof. Dr.-Ing. Martin Fiebig zum 60. Geburtstag